TEA5710.PDF

(229 KB) Pobierz
11018325 UNPDF
INTEGRATED CIRCUITS
DATA SHEET
TEA5710; TEA5710T
AM/FM radio receiver circuit
Product specication
File under Integrated Circuits, IC01
March 1994
11018325.012.png
Philips Semiconductors
Product specication
AM/FM radio receiver circuit
TEA5710; TEA5710T
FEATURES
APPLICATIONS
·
Wide supply voltage range: 2.0 to 12 V
·
Portable AM/FM radio
·
Low current consumption: 7.5 mA at AM, 9.0 mA at FM
·
Clock radio
·
High selectivity with distributed IF gain
·
Personal headphone radio
·
LED driver for tuning indication
·
High input sensitivity: 1.6 mV/m (AM), 2.0
m
V (FM) for 26
DESCRIPTION
The TEA5710 is a high performance Bimos IC for use in
AM/FM radios. All necessary functions are integrated:
from AM and FM front-end to detector output stages.
dB S/N
·
Good strong signal behaviour: 10 V/m at AM, 500 mV at
FM
·
Low output distortion: 0.8% at AM, 0.3% at FM
·
Designed for simple and reliable PC-board layout
·
High impedance MOSFET input on AM
QUICK REFERENCE DATA
Conditions AM: f i = 1 MHz; m = 0.3; f m = 1 kHz; V P = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A,
unless otherwise specied. Conditions FM: f i = 100 MHz;
D
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V P
positive supply voltage
2.0
-
12
V
I P
supply current
in AM mode
5.6
7.5
9.9
mA
in FM mode
7.3
9.0
11.2
mA
T amb
operating ambient temperature range
-
15
-
+
60
°
C
AM performance
V in1
RF sensitivity
40
55
70
m
V
V 13
AF output voltage
36
45
70
mV
THD
total harmonic distortion
-
0.8
2.0
%
FM performance
V in3
RF sensitivity
1.0
2.0
3.8
m
V
V 13
AF output voltage
47
58
69
mV
THD
total harmonic distortion
-
0.3
0.8
%
ORDERING INFORMATION
EXTENDED TYPE
NUMBER
PACKAGE
PINS
PIN POSITION
MATERIAL
CODE
TEA5710
24
SDIL
plastic
SOT234AG (1)
TEA5710T
24
SO24L
plastic
SOT137A (2)
Notes
1. SOT234-1; 1996 August 27.
2. SOT137-1; 1996 August 27.
March 1994
2
f = 22.5 kHz; f m = 1 kHz; V P = 3.0 V; measured in Fig.4 with
S1 in position B and S2 in position A, unless otherwise specied.
11018325.013.png 11018325.014.png
Philips Semiconductors
Product specication
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, full pagewidth
FM-RF I FM-RF O
FM-MIXER
FM-IF1 I FM-RF1 O
FM-IF2 I
FM-DEM
1
20
4
6
8
10
12
RFGND
24
FM
FRONT-END
FM
MIXER
FM
IF 1
FM
IF 2
FM
DETECTOR
FM-OSC
18
V P
RIPPLE
16
FM
14
AM/FM
FM
OSCILLATOR
AM/FM
SWITCH
TEA5710
TEA5710T
22
AM
VSTAB A
VSTAB B
IFGND
5
STABILIZER
21
AM-AGC/
FM-AFC
9
AM
OSCILLATOR
AGC
AM/FM
INDICATOR
15
IND
11
AM-OSC
17
AM-RF I
23
AM
FRONT-END
AM
MIXER
AM-IF
AM
DETECTOR
13
AF
3
2
7
19
AM-MIXER
AM-IF1 I
AM-IF2 I/O
SUBGND
MGE106
Fig.1 Block diagram.
March 1994
3
11018325.015.png 11018325.001.png 11018325.002.png 11018325.003.png 11018325.004.png 11018325.005.png 11018325.006.png 11018325.007.png 11018325.008.png 11018325.009.png
Philips Semiconductors
Product specication
AM/FM radio receiver circuit
TEA5710; TEA5710T
PINNING
SYMBOL
PIN
DESCRIPTION
FM-RF I
1
FM-RF aerial input (input impedance typ. 50
W
)
AM-IF1 I
2
input from IFT or ceramic lter (input impedance typ. 3 k
W
)
AM-MIXER
3
open-collector output to IFT
FM-MIXER
4
output to ceramic IF lter (output impedance typ. 330
W
)
VSTAB A
5
stabilized internal supply voltage (A)
FM-IF1 I
6
rst FM-IF input (input impedance typ. 330
W
)
AM-IF2 I/O
7
input/output to IFT; output: current source
FM-IF1 O
8
rst FM-IF output (output impedance typ. 330
W
)
VSTAB B
9
stabilized internal supply voltage (B)
FM-IF2 I
10
second FM-IF input (input impedance typ. 330
W
)
IFGND
11
ground of IF and detector stages
FM-DEM
12
ceramic discriminator pin
AF
13
audio output (output impedance typ. 5 k
W
)
AM/FM
14
switch terminal: open for AM; ground for FM
IND
15
eld-strength dependent indicator
V P
16
positive supply voltage
AM-OSC
17
parallel tuned AM-OSC circuit to ground
FM-OSC
18
parallel tuned FM-OSC circuit to ground
SUBGND
19
substrate and RF ground
FM-RF O
20
parallel tuned FM-RF circuit to ground
AM-AGC/FM-AFC
21
AGC/AFC capacitor pin
RIPPLE
22
ripple capacitor pin
AM-RF I
23
parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
RFGND
24
FM-RF ground
March 1994
4
11018325.010.png
Philips Semiconductors
Product specication
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, halfpage
FM-RF I
1
24
RFGND
FM-RF I
AM-IF I
1
24
RFGND
AM-IF I
2
23
AM-RF I
2
23
AM-RF I
AM-MIXER
3
22
RIPPLE
AM-MIXER
3
22
RIPPLE
FM-MIXER
4
21
AM-AGC/FM-AFC
FM-MIXER
4
21
AM-AGC/FM-AFC
VSTAB A
5
20
FM-RF O
VSTAB A
5
20
FM-RF O
FM-IF1 I
AM-IF2 I/O
FM-IF1 O
VSTAB B
FM-IF2 I
6
19
SUBGND
FM-IF1 I
6
19
SUBGND
TDA5710
TDA5710T
7
18
FM-OSC
AM-IF2 I/O
FM-IF1 O
VSTAB B
FM-IF2 I
IFGND
7
18
FM-OSC
8
17
AM-OSC
8
17
AM-OSC
9
16
V P
IND
9
16
V P
IND
10
15
10
15
IFGND
11
14
AM/FM
11
14
AM/FM
FM-DEM
12
13
AF
FM-DEM
12
13
AF
MGE104
MGE105
Fig.2 Pin configuration TEA5710.
Fig.3 Pin configuration TEA5710T.
FUNCTIONAL DESCRIPTION
The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage
can go down temporarily to 1.8 V without any loss in performance.
The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength
dependent indicator output and is designed for distributed selectivity.
The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large
signals it lowers the input impedance.
The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.
The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator
output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.
March 1994
5
handbook, halfpage
11018325.011.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin