2SB632K.PDF

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2SB632, 632K/2SD612, 612K
Ordering number:341G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Features
· High collector dissipation and wide ASO.
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
P
S
C
2
D
2
D
U
C
V
V
C
(
(
V
C
V
V
C
(
(
V
E
V
V
E
(
V
C
C
I C
(
A
C
C
(
I C
(
A
C
D
P C
1W
Tc=25˚C
1
W
J
T
T
1
˚C
˚C
S
T
T
–
t
+
Electrical Characteristics at Ta = 25˚C
R
P
S
C
U
m
t
m
C
B
V
V
(
I C
=
I
E =
B
D
(
V
B
D
(
V
C
B
V
V
(
I C
=
R
B =
¥
B
D
(
V
B
D
(
V
E
B
V
V
(
I E
=
I
C
=
(
V
C
C
C
I
V C
=
I
E =
(
µ
E
C
C
I
V E
=
I
C =
(
µ
* : The 2SB632/2SD612 are classified by 500mA h FE as follows :
6
D
1
1
E
2
1
F
3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
C
E
11060666.002.png
2SB632, 632K/2SD612, 612K
R
P
S
C
U
m
t
m
D
C
G
h F 1
V C
=
I
C
=
6
3
h F 2
V C
=
I
C
=
3
G
P
f T
V C
=
I
C
=
1
M
O
C
C o
V C
=
f
(
p
C
S
V
V
C
I C
=
I
B
=
(
(
V
0
0
V
B
S
V
V
B
I C
=
I
B
=
(
(
V
T
T
t o
S
s
T
C
(
n
F
T
t f
S
s
T
C
(
n
1
n
S
T
t s
S
s
T
C
4
n
Switching Time Test Circuit
No.341–2/9
11060666.003.png
2SB632, 632K/2SD612, 612K
No.341–3/9
11060666.004.png
2SB632, 632K/2SD612, 612K
Sample Application Circuit 1 : 8W pure complementary amplifier using the 2SB632K/2SD612K
[Specifications] Power supply : 100V AC supply transformer with no signal=28.8V.
Maximum output=(THD=5%)=25V, f=1kHz, R L =8
W
, R g =600
W.
P
S
C
t
U
Q
C
I C
O
s
1
m
(
C
I D
D
s
4
m
I C
F
s
1
m
V
G
V G
W
N
7
d
V G
W
N
4
d
O
P
P O
T
8
W
T
H
D
T
P O =
0
%
I
R
r i
P O =
6
k W
O
R
r o
P O =
0
W
No.341–4/9
11060666.005.png
2SB632, 632K/2SD612, 612K
Unit (resistance : W , capacitance : F)
No.341–5/9
11060666.001.png

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