2SC5305.PDF

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2SC5305
Ordering number:EN5884
NPN Triple Diffused Planar Silicon Transistor
2SC5305
Inverter Lighting Applications
Features
· High breakdown voltage (V CBO =1200V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2079B
[2SC5305]
4.5
10.0
2.8
3.2
0.9
1.2
0.7
0.75
1:Base
2:Collector
3:Emitter
1 2 3
2.55
2.55
SANYO:TO-220FI (LS)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
P
S
C
R
U
C
V
V
C
1
V
C
V
V
C
6
V
E
V
V
E
9V
C
C
I C
6A
C
C
(
I C
1
A
C
D
P C
2W
Tc=25˚C
3
W
J
T
T
1
˚C
S
T
T
t
+
˚C
Electrical Characteristics at Ta=25˚C
R
P
S
C
U
m
t
m
C
C
C
I
C
V C
=
I
E =
1
µ
C
C
C
I
C
V C
=
R
B =
1
m
C
S
V
V
I C
=
I
B =
6
V
E
C
C
I
E
V E
=
I
C =
1
m
C
S
V
V
C
I C
=
I
B
=
1
V
B
S
V
V
B
I C
=
I
B
=
1
V
D
C
G
h F 1
V C
=
C
=
3
4
5
h
F
2
V C
=
C
=
1
S
T
t
s
I C
=
I
B
=
B
=
2
µ
F
T
t f
I C
=
I
B
=
B
=
0
µ
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-1239 No.5884-1/3
C
I
I
I
I
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2SC5305
Switching Time Test Circuit
R C
I B1
I B1
I B2
V OUT
VCC
0.9 V OUT
I B2
V OUT
0.1 V OUT
t stg t f
10
I C - V CE
7
I C - V BE
V CE =5V
6
8
5
6
4
4
3
2
2
1
0
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, V CE –V
Base-to-Emitter Voltage, V BE –V
100
h FE - I C
10
V CE ( sat ) - I C
V CE =5V
I C / I B =5
7
7
T a = 120
°
C
5
5
3
3
2
2
1.0
7
5
10
3
7
2
5
0.1
7
3
5
2
3
2
1.0
357 0.1
2
357 1.0
2
3
5 7 10
0.01
357 0.1
2
357 1.0
2
3
5 7 10
Collector Current, I C – A
Collector Current, I C –A
10
V BE ( sat ) - I C
10
SW Time - I C
I C / I B =5
V CC = 200V
I C / I B1 =5
I B2 / I B1 =2
R load
7
7
5
5
3
2
3
2
1.0
7
5
1.0
Ta = - 40°C
3
7
2
5
0.1
7
3
5
2
3
2
0.1
357 0.1
2
357 1.0
2
3
5 7 10
0.01
7
0.1
2
3
5 7
1.0
2
3
5 7 10
Collector Current, I C – A
Collector Current, I C –A
No.5884-2/3
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2SC5305
C
C
10
SW Time - I B2
3
Forward Bias A S O
V CC = 200V
I C =3A
I B1 = 0.6A
R load
7
2
I CP
PT< 50
µ
s
5
10
3
7
I C
2
5
1.0
3
2
7
5
1.0
3
7
2
5
3
0.1
2
7
5
0.1
3
7
5
2
Tc=25°C
1pulse
3
0.01
2
7
0.1
2
3
5
7
1.0
2
3
5
2
357
10
2
357
100
2
3
5 7
1000
Base Current, I B2 –A
Collector–to–Emitter Voltage, V CE –V
5
Reverse Bias A S O
2.5
P C - Ta
3
2
2.0
10
7
5
1.5
3
2
1.0
1.0
7
5
H
I B2 =– 1A
T c =25˚C
1pulse
µ
3
0.5
2
0
0.1
5
7
100
2
3
5
7
1000
2
0
20
40
60
8 0
100
120
140
160
Collector-to-Emitter Voltage, V CE –V
Ambient Temperature, Ta –
°
C
40
P C - Tc
35
30
20
10
0
20
40
60
8 0
100
120
140
160
Case Temperature, Tc –
°C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of June, 1998. Specifications and information herein are subject to
change without notice.
PS No.5884-3/3
L=200
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Zgłoś jeśli naruszono regulamin