BC548.PDF
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MCC
omponents
21201 Itasca Street Chatsworth
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BC546,B
BC547,A,B,C
BC548,A,B,C
Features
NPN Silicon
Through Hole Package
150
o
C Junction Temperature
Amplifier Transistor
Pin Configuration
Bottom View
625mW
C B E
Mechanical Data
Case: TO-92, Molded Plastic
Polarity: indicated as above.
A
TO-92
E
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage BC546
BC547
BC548
V
CEO
65
45
30
V
C
Collector-Base Voltage BC546
BC547
BC548
V
CBO
80
50
30
V
Emitter-Base Voltage
V
EBO
6.0
V
D
Collector Current(DC)
I
C
100 mA
Power Dissipation@T
A
=25
o
C
P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C
P
d
1.5
12
W
mW/
o
C
G
Thermal Resistance, Junction to
Ambient Air
DIMENSIONS
R
JA
200
o
C/W
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
Thermal Resistance, Junction to
Case
A
.175
.185
4.45
4.70
R
JC
83.3
o
C/W
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
o
C
E
.135
.145
3.43
3.68
Operating & Storage Temperature T
j
, T
STG
-55~150
G
.095
.105
2.42
2.67
www.
mccsemi
.com
BC546 thru BC548C
MCC
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
BC546
V
(BR)CEO
65
45
30
—
—
—
—
—
—
V
(I
C
= 1.0 mA, I
B
= 0)
BC547
BC548
Collector–Base Breakdown Voltage
BC546
V
(BR)CBO
80
50
30
—
—
—
—
—
—
V
(I
C
= 100
m
Adc)
BC547
BC548
Emitter–Base Breakdown Voltage
BC546
V
(BR)EBO
6.0
6.0
6.0
—
—
—
—
—
—
V
(I
E
= 10
A, I
C
= 0)
BC547
BC548
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
m
A, V
CE
= 5.0 V)
h
FE
—
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
—
—
—
180
290
520
450
800
800
220
450
800
(I
C
= 100 mA, V
CE
= 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
Collector–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
V
—
---
0.3
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
—
—
1.0
V
Base–Emitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
V
0.55
—
—
—
0.7
0.77
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
MHz
BC546
BC547
BC548
150
150
150
300
300
300
—
—
—
Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
C
obo
—
1.7
4.5
pF
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
C
ibo
—
10
—
pF
Small–Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
h
fe
—
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 k
NF
dB
,
BC546
—
—
—
2.0
2.0
2.0
10
10
10
f = 1.0 kHz,
f = 200 Hz)
BC547
BC548
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mccsemi
.com
D
BC546 thru BC548C
MCC
2.0
1.0
1.5
V
CE
= 10 V
T
A
= 25
°
C
0.9
T
A
= 25
°
C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
1.0
0.8
0.7
0.6
V
BE(on)
@ V
CE
= 10 V
0.6
0.5
0.4
0.4
0.3
0.3
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.0
T
A
= 25
°
C
-55
°
C to +125
°
C
1.6
1.2
I
C
= 200 mA
1.6
1.2
I
C
=
10 mA
I
C
=
20 mA
I
C
= 50 mA
I
C
= 100 mA
2.0
0.8
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC547/BC548
10
400
300
7.0
T
A
= 25
°
C
200
5.0
C
ib
3.0
100
V
CE
= 10 V
T
A
= 25
°
C
80
C
ob
60
2.0
40
30
1.0
0.4 0.6
0.8
1.0
2.0
4.0
6.0
8.0
10
20
40
20
0.5
0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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mccsemi
.com
BC546 thru BC548C
MCC
BC547/BC548
1.0
V
CE
= 5 V
T
A
= 25
°
C
T
A
= 25
°
C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
2.0
0.6
1.0
V
BE
@ V
CE
= 5.0 V
0.4
0.5
0.2
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1
0.2
1.0
10
100
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
-1.0
T
A
= 25
°
C
1.6
-1.4
20 mA
50 mA
100 mA
200 mA
1.2
-1.8
q
VB
for V
BE
0.8
I
C
=
10 mA
-2.2
-55
°
C to 125
°
C
0.4
-2.6
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
-3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
BC546
40
T
A
= 25
°
C
500
V
CE
= 5 V
T
A
= 25
°
C
20
C
ib
200
10
100
6.0
50
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
5.0
10
50 100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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mccsemi
.com
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
Plik z chomika:
aos.artur2
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