BC547.PDF

(46 KB) Pobierz
274675849 UNPDF
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, V CEO =65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
1
TO-92
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T a =25 °
C unless otherwise noted
Symbol
Parameter
Value
Units
V CBO
Collector-Base Voltage : BC546
: BC547/550
: BC548/549
80
50
30
V
V
V
V CEO
Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
65
45
30
V
V
V
V EBO
Emitter-Base Voltage : BC546/547
: BC548/549/550
6
5
V
V
I C
Collector Current (DC)
100
mA
P C
Collector Power Dissipation
500
mW
T J
Junction Temperature
150
C
T STG
Storage Temperature
-65 ~ 150
C
Electrical Characteristics T a =25 °
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I CBO
Collector Cut-off Current
V CB =30V, I E =0
15
nA
h FE
DC Current Gain
V CE =5V, I C =2mA
110
800
V CE (sat) Collector-Emitter Saturation Voltage I C =10mA, I B =0.5mA
I C =100mA, I B =5mA
90
200
250
600
mV
mV
V BE (sat) Base-Emitter Saturation Voltage
I C =10mA, I B =0.5mA
I C =100mA, I B =5mA
700
900
mV
mV
V BE (on)
Base-Emitter On Voltage
V CE =5V, I C =2mA
V CE =5V, I C =10mA
580
660
700
720
mV
mV
f T
Current Gain Bandwidth Product
V CE =5V, I C =10mA, f=100MHz
300
MHz
C ob
Output Capacitance
V CB =10V, I E =0, f=1MHz
3.5
6
pF
C ib
Input Capacitance
V EB =0.5V, I C =0, f=1MHz
9
pF
NF
Noise Figure : BC546/547/548
: BC549/550
: BC549
: BC550
V CE =5V, I C =200
A
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
V CE =5V, I C =200
A
R G =2K
, f=30~15000MHz
h FE Classification
Classification
A
B
C
h FE
110 ~ 220
200 ~ 450
420 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
f=1KHz, R G =2K
274675849.008.png 274675849.009.png
 
274675849.010.png
 
274675849.001.png 274675849.002.png 274675849.003.png 274675849.004.png
Typical Characteristics
100
100
I B = 400
A
V CE = 5V
80
I B = 350
A
I B = 300
A
10
60
I B = 250
A
I B = 200
A
40
I B = 150
A
1
I B = 100
A
20
I B = 50
A
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
18
20
V CE [V], COLLECTOR-EMITTER VOLTAGE
V BE [V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
10000
V CE = 5V
I C = 10 I B
1000
1000
V BE (sat)
100
100
10
V CE (sat)
1
1
10
100
1000
10
1
10
100
1000
I C [mA], COLLECTOR CURRENT
I C [A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
1000
f=1MHz
I E = 0
V CE = 5V
10
100
1
10
0.1
1
1
10
100
1000
0.1
1
10
100
V CB [V], COLLECTOR-BASE VOLTAGE
I C [mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
274675849.005.png
Package Dimensions
TO-92
4.58 +0.25
–0.15
0.46 ±
0.10
1.27TYP
1.27TYP
[1.27 ±
0.38 +0.10
–0.05
[1.27 ±
0.20 ]
0.20 ]
3.60 ±
0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
274675849.006.png
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT
DOME™
EcoSPARK™
E 2 CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
FACT™
FACT Quiet series™
FAST ®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I 2 C™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC ®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench ®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER ®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET ®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
274675849.007.png
This datasheet has been download from:
Datasheets for electronics components.
Zgłoś jeśli naruszono regulamin