BC618.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC617; BC618
NPN Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 04
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Philips Semiconductors
Product specification
NPN Darlington transistors
BC617; BC618
FEATURES
PINNING
·
Low current (max. 500 mA)
PIN
DESCRIPTION
·
Low voltage (max. 55 V)
1
emitter
·
High DC current gain.
2
base
3
collector
APPLICATIONS
·
General purpose low frequency
·
Relay drivers.
handbook, halfpage
2
3
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package.
1
2
3
TR1
TR2
1
MAM302
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC617
-
50
V
BC618
-
80
V
V CES
collector-emitter voltage
V BE =0
BC617
-
40
V
BC618
-
55
V
I C
collector current
-
1
A
P tot
total power dissipation
T amb £
25
°
C
-
500
mW
h FE
DC current gain
I C = 1 mA; V CE =5V
BC617
4000
-
BC618
2000
-
f T
transition frequency
I C = 500 mA; V CE = 5 V; f = 100 MHz
155
-
MHz
1997 Jul 04
2
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Philips Semiconductors
Product specification
NPN Darlington transistors
BC617; BC618
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC617
-
50
V
BC618
-
80
V
V CES
collector-emitter voltage
V BE =0
BC617
-
40
V
BC618
-
55
V
V EBO
emitter-base voltage
open collector
-
12
V
I C
collector current (DC)
-
500
mA
I CM
peak collector current
-
800
mA
I B
base current (DC)
-
200
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
500
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jul 04
3
11066890.030.png
Philips Semiconductors
Product specification
NPN Darlington transistors
BC617; BC618
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
BC617
I E = 0; V CB =40V
-
-
50
nA
BC618
I E = 0; V CB =60V
-
-
50
nA
I CES
collector cut-off current
BC617
V BE = 0; V CE =40V
-
-
50
m
A
BC618
V BE = 0; V CE =60V
-
-
50
m A
I EBO
emitter cut-off current
I C = 0; V EB =10V
-
-
50
nA
h FE
DC current gain
I C = 1 mA; V CE = 5 V; see Fig.2
-
BC617
4000
-
-
BC618
2000
-
-
h FE
DC current gain
I C = 10 mA; V CE = 5 V; see Fig.2
-
BC617
10000
-
-
BC618
4000
-
-
h FE
DC current gain
I C = 200 mA; V CE = 5 V; see Fig.2
10000
-
70000
V CEsat
collector-emitter saturation voltage I C = 200 mA; I B = 0.2 mA
-
-
1.1
V
V BEsat
base-emitter saturation voltage
I C = 200 mA; I B = 0.2 mA
-
-
1.6
V
C c
collector capacitance
I E = 0; V CB =30V
-
3.5
-
pF
f T
transition frequency
I C = 500 mA; V CE = 5 V; f = 100 MHz 155
-
-
MHz
1997 Jul 04
4
11066890.031.png
Philips Semiconductors
Product specification
NPN Darlington transistors
BC617; BC618
MGD837
80000
handbook, full pagewidth
h FE
60000
40000
20000
0
10 - 1
1
10
10 2
10 3
I C (mA)
V CE =2V.
Fig.2 DC current gain; typical values.
1997 Jul 04
5
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