BC546_547_3.pdf
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NPN general purpose transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC546; BC547
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 15
Philips Semiconductors
Product specification
NPN general purpose transistors
BC546; BC547
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 65 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
General purpose switching and amplification.
DESCRIPTION
handbook, halfpag
1
2
3
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC556 and BC557.
3
2
MAM182
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC546
-
80
V
BC547
-
50
V
V
CEO
collector-emitter voltage
open base
BC546
-
65
V
BC547
-
45
V
V
EBO
emitter-base voltage
open collector
BC546
-
6
V
BC547
-
6
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC546; BC547
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
0.25
K/mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=30V
-
-
15
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
-
-
5
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=5V
-
-
100
nA
h
FE
DC current gain
I
C
=10
m
A; V
CE
=5V;
see Figs 2, 3 and 4
BC546A
-
90
-
BC546B; BC547B
-
150
-
BC547C
-
270
-
DC current gain
I
C
= 2 mA; V
CE
=5V;
see Figs 2, 3 and 4
BC546A
110
180
220
BC546B; BC547B
200
290
450
BC547C
420
520
800
BC547
110
-
800
BC546
110
-
450
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
90
250
mV
I
C
= 100 mA; I
B
=5mA
-
200
600
mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA; note 1
-
700
-
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
900
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V; note 2
580
660
700
mV
I
C
= 10 mA; V
CE
=5V
-
-
770
mV
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
1.5
-
pF
C
e
emitter capacitance
I
C
=i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
11
-
pF
f
T
transition frequency
I
C
= 10mA; V
CE
= 5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
A; V
CE
=5V;
R
S
=2k
W
; f = 1 kHz; B = 200 Hz
m
-
2
10
dB
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. V
BE
decreases by about 2 mV/K with increasing temperature.
1999 Apr 15
3
°
I
C
= 200
Philips Semiconductors
Product specification
NPN general purpose transistors
BC546; BC547
MBH723
250
handbook, full pagewidth
h
FE
200
V
CE
= 5 V
150
100
50
10
-
2
10
-
1
10
2
10
3
1
10
I
C
(mA)
BC546A.
Fig.2 DC current gain; typical values.
MBH724
300
handbook, full pagewidth
h
FE
V
CE
= 5 V
200
100
0
10
-
2
10
-
1
10
2
10
3
1
10
I
C
(mA)
BC546B; BC547B.
Fig.3 DC current gain; typical values.
1999 Apr 15
4
0
Philips Semiconductors
Product specification
NPN general purpose transistors
BC546; BC547
MBH725
600
handbook, full pagewidth
V
CE
= 5 V
h
FE
400
200
10
-
2
10
-
1
10
2
10
3
1
10
I
C
(mA)
BC547C.
Fig.4 DC current gain; typical values.
1999 Apr 15
5
0
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