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BUZ 344
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Ordering Code
BUZ 344
100 V
50 A
0.035
W
TO-218 AA
C67078-S3132-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 °C
I
D
A
50
Pulsed drain current
T
C
= 25 °C
I
Dpuls
200
Avalanche current,limited by T
jmax
I
AR
50
Avalanche energy,periodic limited by T
jmax
E
AR
18.5
mJ
Avalanche energy, single pulse
I
D
= 50 A, V
DD
= 25 V, R
GS
= 25
E
AS
W
L = 240 µH, T
j
= 25 °C
400
Gate source voltage
V
GS
±
20
V
Power dissipation
T
C
= 25 °C
P
tot
W
170
Operating temperature
T
j
-55 ... + 150 °C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
£
0.74
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 344
Electrical Characteristics,
at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 °C
V
(BR)DSS
V
100
-
-
Gate threshold voltage
V
GS
=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
= 100 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 100 V, V
GS
= 0 V, T
j
= 125 °C
I
DSS
µA
-
0.1
1
-
10
100
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
nA
-
10
100
Drain-Source on-resistance
V
GS
= 10 V, I
D
= 32 A
R
DS(on)
W
-
0.03
0.035
Semiconductor Group
2
07/96
BUZ 344
Electrical Characteristics,
at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
³
g
fs
S
2
*
I
D *
R
DS(on)max,
I
D
= 32 A
15
28
-
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
pF
-
2400
3200
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
730
1100
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
430
650
Turn-on delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
t
d(on)
ns
W
-
33
50
Rise time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
W
t
r
-
140
210
Turn-off delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
t
d(off)
W
-
500
670
Fall time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
W
t
f
-
230
310
Semiconductor Group
3
07/96
BUZ 344
Electrical Characteristics,
at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
I
S
A
-
-
50
Inverse diode direct current,pulsed
T
C
= 25 °C
I
SM
-
-
200
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 100 A
V
SD
V
-
1.6
1.8
Reverse recovery time
V
R
= 30 V, I
F
=
l
S,
di
F
/dt = 100 A/µs
t
rr
ns
-
170
-
Reverse recovery charge
V
R
= 30 V, I
F
=
l
S,
di
F
/dt = 100 A/µs
Q
rr
µC
-
0.9
-
Semiconductor Group
4
07/96
BUZ 344
Power dissipation
P
tot
=
¦
(T
C
)
(T
C
)
parameter: V
GS
³
¦
10 V
180
55
A
W
I
D
45
P
tot
140
40
120
35
100
30
80
25
20
60
15
40
10
20
5
0
0
0
20
40
60
80 100 120 °C 160
T
C
0
20
40
60
80 100 120 °C 160
T
C
(V
DS
)
parameter: D = 0.01, T
C
= 25°C
¦
Transient thermal impedance
Z
th JC
=
¦
10
3
10
0
A
K/W
I
D
t
p
= 3.1µs
Z
thJC
10 µs
10
2
10
-1
100 µs
1 ms
D = 0.50
10 ms
0.20
10
1
10
-2
0.10
0.05
single pulse
0.02
0.01
DC
10
0
10
-3
10
0
10
1
10
2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
s
V
DS
t
p
Semiconductor Group
5
07/96
Drain current
I
D
=
Safe operating area
I
D
=
(t
p
)
parameter: D = t
p
/ T
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aos.artur
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