BT148_SERIES_1.pdf

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Philips Semiconductors
Product specification
Thyristors
BT148 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose
BT148- 400R 500R 600R
switching and phase control
V DRM ,
Repetitive peak off-state
400
500
600
V
applications. These devices are
V RRM
voltages
intended to be interfaced directly to
I T(AV)
Average on-state current
2.5
2.5
2.5
A
microcontrollers, logic integrated
I T(RMS)
RMS on-state current
4
4
4
A
circuits and other low power gate
I TSM
Non-repetitive peak on-state
35
35
35
A
trigger circuits.
current
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
a
k
2
anode
3
gate
g
tab anode
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -500R -600R
V DRM , V RRM Repetitive peak off-state
-
400 1
500 1
600 1
V
voltages
I T(AV)
Average on-state current half sine wave; T mb
£
113 ˚C
-
2.5
A
I T(RMS)
RMS on-state current
all conduction angles
-
4
A
I TSM
Non-repetitive peak
half sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 10 ms
-
35
A
t = 8.3 ms
-
38
A
I 2 t
I 2 t for fusing
t = 10 ms
-
6.1
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 10 A; I G = 50 mA;
-
50
A/
m
s
on-state current after
dI G /dt = 50 mA/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
V RGM
Peak reverse gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125 2
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
W
or less.
October 1997
1
Rev 1.300
logic level
s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k
22887441.004.png
Philips Semiconductors
Product specification
Thyristors
BT148 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance
-
-
2.5
K/W
junction to mounting base
R th j-a
Thermal resistance
in free air
-
95
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
-
15
200
m
A
I L
Latching current
V D = 12 V; I GT = 0.1 A
-
0.17
10
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
0.10
6
mA
V T
On-state voltage
I T = 5 A
-
1.23
1.8
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.4
1.5
V
V D = V DRM(max) ; I T = 0.1 A; T j = 110 ˚C
0.1
0.2
-
V
I D , I R
Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
50
-
V/
m
s
off-state voltage
exponential waveform; R GK = 100
W
t gt
Gate controlled turn-on
I TM = 10 A; V D = V DRM(max) ; I G = 5 mA;
-
2
-
m
s
time
dI G /dt = 0.2 A/
m
s
t q
Circuit commutated
V D = 67% V DRM(max) ; T j = 125 ˚C; I TM = 8 A;
-
100
-
m
s
turn-off time
V R = 10 V; dI TM /dt = 10 A/
m
s;
dV D /dt = 2 V/
m
s; R GK = 1 k
W
October 1997
2
Rev 1.300
logic level
22887441.005.png
Philips Semiconductors
Product specification
Thyristors
BT148 series
6
Ptot / W
BT148
Tmb(max) / C
110
ITSM / A
40
conduction
angle
form
factor
5
degrees
30
60
90
120
180
a
112.5
I TSM
4
2.8
2.2
1.9
1.57
T
1.9
a = 1.57
2.2
30
T
Tj initial = 25 C max
time
4
115
2.8
3
4
117.5
20
2
120
10
1
122.5
0
0
0.5
1
1.5
2
2.5
125
0
1
10 100
Number of half cycles at 50Hz
1000
IF(AV) / A
Fig.1. Maximum on-state dissipation, P tot , versus
average on-state current, I T(AV) , where
a = form factor = I T(RMS) / I T(AV) .
Fig.4. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
BT148
12
IT(RMS) / A
BT150
10
dI /dt limit
T
8
100
6
T
I TSM
4
T
Tj initial = 25 C max
time
2
10
10us
100us
1ms
10ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb
£
113˚C.
5
IT(RMS) / A
BT148
VGT(Tj)
VGT(25 C)
BT151
1.6
4
113 C
1.4
3
1.2
1
2
0.8
1
0.6
0
-50
0
50
100
150
0.4
-50
0
50
100
150
Tmb / C
Tj / C
Fig.3. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
October 1997
3
Rev 1.300
logic level
I
3
I
0
22887441.006.png 22887441.007.png
Philips Semiconductors
Product specification
Thyristors
BT148 series
IGT(Tj)
IGT(25 C)
12
IT / A
BT148
BT148
3
Tj = 125 C
Tj = 25 C
10
2.5
Vo = 1.26 V
Rs = 0.099 ohms
typ
max
2
8
1.5
6
1
4
0.5
2
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
BT148
BT145
3
2.5
1
2
1.5
1
0.1
P
t p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
IH(Tj)
IH(25 C)
1000
dVD/dt (V/us)
BT145
3
2.5
RGK = 100 ohms
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
October 1997
4
Rev 1.300
logic level
0
D
22887441.001.png
Philips Semiconductors
Product specification
Thyristors
BT148 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
mounting
base
2.8
2.3
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
1 23
4.58
0.5
2.29
1) Lead dimensions within this
zone uncontrolled.
0.88
max
Fig.13. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.300
logic level
22887441.002.png 22887441.003.png

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