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2N6520 PNP Epitaxial Silicon Transistor
2N6520
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
= -350V
• Collector Dissipation: P
C
(max)=625mW
• Complement to 2N6517
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
1. Emitter 2. Base 3. Collector
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
-350
V
V
CEO
Collector-Emitter Voltage
-350
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-500
mA
I
B
Base Current
-250
mA
P
C
Collector Dissipation
0.625
W
Derate above 25
5
mW/
C
T
J
Junction Temperature
50
C
T
STG
Storage Temperature
-55 ~ 150
C
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
A, I
E
=0
-350
V
BV
CEO
* Collector-Emitter Breakdown Voltage
I
C
= -1mA, I
B
=0
-350
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
A, I
C
=0
-5
V
I
CBO
Collector Cut-off Current
V
CB
= -250V, I
E
=0
-50
nA
I
EBO
Emitter Cut-off Current
V
EB
= -4V, I
C
=0
-50
nA
h
FE
* DC Current Gain
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
20
30
30
20
15
200
200
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
-0.30
-0.35
-0.50
-1
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
-0.75
-0.85
-0.90
V
V
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -10V, I
C
= -100mA
-2
V
f
T
* Current Gain Bandwidth Product
V
CE
= -20V, I
C
= -10mA, f=20MHz
40
200
MHz
C
ob
Output Capacitance
V
CB
= -20V, I
E
=0, f=1MHz
6
pF
C
EB
Emitter-Base Capacitance
V
EB
= -0.5V, I
C
=0, f=1MHz
100
pF
t
ON
Turn On Time
V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B1
= -10mA
200
ns
t
OFF
Turn Off Time
V
CC
= -100V, I
C
= -50mA
I
B1
=I
B2
= -10mA
3.5
ns
* Pulse Test: Pulse Width
300
s, Duty Cycle
2%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
1000
-10000
V
CE
= -20V
Ic = 10 I
B
V
CE
(sat)
100
-1000
V
BE
(sat)
10
-100
1
-1
-10
-100
-1000
-10000
-10
-1
-10
-100
-1000
-10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
V
CE
(off) = -100V
t
STG
t
D
@ V
BE
(off)=-2.0V
1000
I
C
/I
B
= 5
T
J
=25
o
C
V
CE
(off) = -100V
t
R
t
F
I
C
/I
B
= 5
I
B1
= I
B2
T
J
=25
o
C
100
100
10
-1
-10
-100
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
3.0
100
2.5
I
C
/I
B
= 10
f=1MHz
2.0
1.5
-55
℃
to 125
℃
C
ib
1.0
0.5
R
θ
VB
for V
BE
-55
℃
to 25
℃
10
0.0
-0.5
-1.0
C
ob
-55
℃
to 125
℃
-1.5
R
θ
VC
for V
CE
(sat)
-2.0
-2.5
-1
-10
-100
1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Temperature Coefficients
Figure 6. Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
(Continued)
1000
V
CE
= -20V
100
10
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-92
4.58
+0.25
–0.15
0.46
±
0.10
1.27TYP
1.27TYP
[1.27
±
0.38
+0.10
–0.05
[1.27
±
0.20
]
0.20
]
3.60
±
0.20
(R2.29)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
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The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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