2n6520.pdf

2N6520

High Voltage Transistor

• Collector-Emitter Voltage: V CEO = -350V

• Collector Dissipation: P C (max)=625mW

• Complement to 2N6517

TO-92

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T a =25 °

1. Emitter 2. Base 3. Collector

C unless otherwise noted

Symbol

Parameter

Value

Units

V CBO

Collector-Base Voltage

-350

V CEO

Collector-Emitter Voltage

-350

V EBO

Emitter-Base Voltage

-5

I C

Collector Current

-500

I B

Base Current

-250

P C

Collector Dissipation

0.625

Derate above 25

mW/

T J

Junction Temperature

T STG

Storage Temperature

-55 ~ 150

Electrical Characteristics T a =25 °

C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Units

BV CBO

Collector-Base Breakdown Voltage

I C = -100

A, I E =0

-350

BV CEO

* Collector-Emitter Breakdown Voltage

I C = -1mA, I B =0

-350

BV EBO

Emitter-Base Breakdown Voltage

I E = -10

A, I C =0

-5

I CBO

Collector Cut-off Current

V CB = -250V, I E =0

-50

I EBO

Emitter Cut-off Current

V EB = -4V, I C =0

-50

h FE

* DC Current Gain

V CE = -10V, I C = -1mA

V CE = -10V, I C = -10mA

V CE = -10V, I C = -30mA

V CE = -10V, I C = -50mA

V CE = -10V, I C = -100mA

200

V CE (sat)

Collector-Emitter Saturation Voltage

I C = -10mA, I B = -1mA

I C = -20mA, I B = -2mA

I C = -30mA, I B = -3mA

I C = -50mA, I B = -5mA

-0.30

-0.35

-0.50

-1

V BE (sat)

Base-Emitter Saturation Voltage

I C = -10mA, I B = -1mA

I C = -20mA, I B = -2mA

I C = -30mA, I B = -3mA

-0.75

-0.85

-0.90

V BE (on)

Base-Emitter On Voltage

V CE = -10V, I C = -100mA

-2

f T

* Current Gain Bandwidth Product

V CE = -20V, I C = -10mA, f=20MHz

200

MHz

C ob

Output Capacitance

V CB = -20V, I E =0, f=1MHz

C EB

Emitter-Base Capacitance

V EB = -0.5V, I C =0, f=1MHz

100

t ON

Turn On Time

V BE (off)= -2V, V CC = -100V

I C = -50mA, I B1 = -10mA

200

t OFF

Turn Off Time

V CC = -100V, I C = -50mA

I B1 =I B2 = -10mA

3.5

* Pulse Test: Pulse Width

300

s, Duty Cycle

Rev. A, February 2000

Typical Characteristics

1000

-10000

V CE = -20V

Ic = 10 I B

V CE (sat)

100

-1000

V BE (sat)

-100

-1

-10

-100

-1000

-10000

-10

-1

-10

-100

-1000

-10000

I C [mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

V CE (off) = -100V

t STG

t D @ V BE (off)=-2.0V

1000

I C /I B = 5

T J =25 o C

V CE (off) = -100V

t R

t F

I C /I B = 5

I B1 = I B2

T J =25 o C

100

-1

-10

-100

-1

-10

-100

I C [mA], COLLECTOR CURRENT

Figure 3. Turn-On Time

Figure 4. Turn-Off Time

3.0

100

2.5

I C /I B = 10

f=1MHz

2.0

1.5

-55 ℃ to 125 ℃

C ib

1.0

0.5

R θ VB for V BE

-55 ℃ to 25 ℃

0.0

-0.5

-1.0

C ob

-55 ℃ to 125 ℃

-1.5

R θ VC for V CE (sat)

-2.0

-2.5

-1

-10

-100

-0.1

-1

-10

-100

I C [mA], COLLECTOR CURRENT

V CB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Temperature Coefficients

Figure 6. Capacitance

Rev. A, February 2000

Typical Characteristics (Continued)

1000

V CE = -20V

100

-1

-10

-100

I C [mA], COLLECTOR CURRENT

Figure 7. Current Gain Bandwidth Product

Rev. A, February 2000

Package Demensions

TO-92

4.58 +0.25

–0.15

0.46 ±

0.10

1.27TYP

[1.27 ±

0.38 +0.10

–0.05

[1.27 ±

0.20 ]

3.60 ±

0.20

(R2.29)

Dimensions in Millimeters

Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

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This datasheet contains final specifications. Fairchild

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This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

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