2n6515.pdf

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2N6515 NPN Epitaxial Silicon Transistor
2N6515
High Voltage Transistor
• Collector-Emitter Voltage: V CEO = 250V
• Collector Dissipation: P C (max)=625mW
• Complement to 2N6518
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T a =25 °
C unless otherwise noted
Symbol
Parameter
Value
Units
V CBO
Collector-Base Voltage
250
V
V CEO
Collector-Emitter Voltage
250
V
V EBO
Emitter-Base Voltage
6
V
I C
Collector Current
500
mA
P C
Collector Dissipation
625
mW
T J
Junction Temperature
150
C
T STG
Storage Temperature
-55 ~ 150
C
Electrical Characteristics T a =25 °
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV CEO
* Collector-Emitter Breakdown Voltage I C =1mA, I B =0
250
V
BV CBO
Collector-Base Breakdown Voltage
I C =100
A, I E =0
250
V
BV EBO
Emitter-Base Breakdown Voltage
I E =10
A, I C =0
6
V
I CBO
Collector Cut-off Current
V CB =150V, I E =0
50
nA
I EBO
Emitter Cut-off Current
V BE =5V, I C =0
50
nA
h FE
* DC Current Gain
I C =1mA, V CE =10V
I C =10mA, V CE =10V
I C =30mA, V CE =10V
I C =50mA, V CE =10V
I C =100mA, V CE =10V
35
50
50
45
25
300
220
V CE (sat)
Collector-Emitter Saturation Voltage
I C =10mA, I B =1mA
I C =20mA, I B =2mA
I C =30mA, I B =3mA
I C =50mA, I B =5mA
0.3
0.35
0.5
1
V
V
V
V
V BE (sat)
Base-Emitter Saturation Voltage
I C =10mA, I B =1mA
I C =20mA, I B =2mA
I C =30mA, I B =3mA
0.75
0.85
0.9
V
V
V
C ob
Output Capacitance
V CB =20V, I E =0, f=1MHz
6
pF
f T
Current Gain Bandwidth Product
I C =10mA, V CE =20V,
f=20MHz
40
200
MHz
V BE (on)
Base Emitter On Voltage
I C =100mA, V CE =10V
2
V
* Pulse Test: Pulse Width
300
s, Duty Cycle
2%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Typical Characteristics
1000
V CE = 10V
1.2
I C = 10 I B
1.0
100
2N6515, 2N6516
0.8
V BE (sat)
2N6517
0.6
10
0.4
0.2
V CE (sat)
0.0
1
1
10
100
1
10
100
I C [mA], COLLECTOR CURRENT
I C [mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1000
I E = 0
f=1MHz
V CE = 20V
10
100
1
10
1
0.1
1
10
100
1
10
100
V CB [V], COLLECTOR-BASE VOLTAGE
I C [mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Package Demensions
TO-92
4.58 +0.25
–0.15
0.46 ±
0.10
1.27TYP
1.27TYP
[1.27 ±
0.38 +0.10
–0.05
[1.27 ±
0.20 ]
0.20 ]
3.60 ±
0.20
(R2.29)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
23105193.005.png
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Not In Production
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The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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