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2N6504
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
•
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
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•
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
•
Blocking Voltage to 800 Volts
•
300 A Surge Current Capability
•
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
G
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
A
K
Symbol
Value
Unit
*Peak Repetitive Off–State Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
T
J
= 25 to 125
V
DRM,
V
RRM
Volts
MARKING
DIAGRAM
°
C)
2N6504
2N6505
2N6507
2N6508
2N6509
50
100
400
600
800
4
TO–220AB
CASE 221A
STYLE 3
YY WW
650x
On-State RMS Current
(180
°
Conduction Angles; T
C
= 85
°
C)
I
T(RMS)
25
A
1
Average On-State Current
(180
°
Conduction Angles; T
C
= 85
°
C)
I
T(AV)
16
A
2
x = 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
3
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 100
°
C)
I
TSM
250
A
Forward Peak Gate Power
(Pulse Width
P
GM
20
Watts
PIN ASSIGNMENT
3
1.0
m
s, T
C
= 85
C)
1
2
3
Cathode
Forward Average Gate Power
(t = 8.3 ms, T
C
= 85
P
G(AV)
0.5
Watts
Anode
Gate
C)
Forward Peak Gate Current
(Pulse Width
I
GM
2.0
A
4
Anode
3
1.0
m
s, T
C
= 85
C)
Operating Junction Temperature Range
T
J
–40 to
+125
°
C
ORDERING INFORMATION
Storage Temperature Range
T
stg
–40 to
+150
°
C
Device
Package
Shipping
*Indicates JEDEC Registered Data
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2N6504
TO220AB
500/Box
2N6505
TO220AB
500/Box
2N6507
TO220AB
500/Box
2N6508
TO220AB
500/Box
2N6509
TO220AB
500/Box
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
1
Publication Order Number:
2N6504/D
°
°
°
W
2N6504 Series
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
q
JC
1.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
,
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
I
DRM
, I
RRM
T
J
= 25
°
C
T
J
= 125
°
C
–
–
–
–
10
2.0
m
A
mA
ON CHARACTERISTICS
*Forward On–State Voltage (Note 2.)
(I
TM
= 50 A)
V
TM
–
–
1.8
Volts
*Gate Trigger Current (Continuous dc)
T
C
= 25
°
C
I
GT
–
–
9.0
–
30
75
mA
(V
AK
= 12 Vdc, R
L
= 100 Ohms)
T
C
= –40
°
C
*Gate Trigger Voltage (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
C
= –40
°
C)
V
GT
–
1.0
1.5
Volts
Gate Non-Trigger Voltage
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
J
= 125
V
GD
0.2
–
–
Volts
C)
*Holding Current
T
C
= 25
C
I
H
–
18
40
mA
(V
AK
= 12 Vdc, Initiating Current = 200 mA,
Gate Open)
T
C
= –40
°
C
–
–
80
*Turn-On Time
(I
TM
= 25 A, I
GT
= 50 mAdc)
t
gt
–
1.5
2.0
m
s
Turn-Off Time (V
DRM
= rated voltage)
(I
TM
= 25 A, I
R
= 25 A)
(I
TM
= 25 A, I
R
= 25 A, T
J
= 125
t
q
m
s
–
–
15
35
–
–
°
C)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
dv/dt
–
50
–
V/
m
s
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
3
300
m
s, Duty Cycle
3
2%.
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2
°
°
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
V
TM
Peak Repetitive Off State Forward Voltage
on state
I
DRM
Peak Forward Blocking Current
I
H
I
RRM
at V
RRM
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
+ Voltage
I
H
Holding Current
Reverse Blocking Region
(off state)
I
DRM
at V
DRM
Forward Blocking Region
Reverse Avalanche Region
Anode –
(off state)
13
0
32
12
0
a
180
°
a
24
90
°
a
= CONDUCTION ANGLE
a
= CONDUCTION ANGLE
60
°
dc
110
a
= 30
°
16
10
0
T
J
= 125
°
C
a
= 30
°
60
°
90
°
180
°
dc
8.0
90
80
0
0
4.0
8.0
12
16
20
0
4.0
8.0
12
16
20
I
T(AV)
, ONSTATE FORWARD CURRENT (AMPS)
I
T(AV)
, AVERAGE ONSTATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. Maximum On–State Power Dissipation
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3
2N6504 Series
100
70
50
30
125
°
C
20
10
25
°
C
7.0
5.0
3.0
2.0
300
1 CYCLE
1.0
275
0.7
0.5
250
0.3
225
T
C
= 85
°
C
f = 60 Hz
0.2
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
0.1
175
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1.0
2.0
3.0
4.0
6.0
8.0
10
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
NUMBER OF CYCLES
Figure 3. Typical On–State Characteristics
Figure 4. Maximum Non–Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
Z
q
JC(t)
= R
q
JC
•
r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200 300 500
1.0 k
2.0 k
3.0 k 5.0 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
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4
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
100
1.0
0.9
0.8
0.7
10
0.6
0.5
0.4
0.3
1
0.2
-40
-25
-10
20
T
J
, JUNCTION TEMPERATURE (
°
C)
35
50
65
80
95
110
125
-40
-25
-10
20
T
J
, JUNCTION TEMPERATURE (
°
C)
5
35
50
65
80
95
110
125
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
100
10
1
-40
-25
-10
5
20
35
50
65
80
95
110
125
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8. Typical Holding Current
versus Junction Temperature
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5
5
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