2n6284-d.pdf

ON Semiconductor

Darlington Complementary

Silicon Power Transistors

2N6283

2N6284

PNP

. . . designed for general–purpose amplifier and low–frequency

switching applications.

•

2N6286

High DC Current Gain @ I C = 10 Adc –

h FE = 2400 (Typ) – 2N6284

= 4000 (Typ) – 2N6287

2N6287

•

Collector–Emitter Sustaining Voltage –

V CEO(sus) = 100 Vdc (Min)

DARLINGTON

20 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

160 WATTS

•

Monolithic Construction with Built–In Base–Emitter Shunt

Resistors

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎ

Symbo

2N6283

2N6286

2N6284

2N6287

Rating

Unit

Collector–Emitter Voltage

V CEO ÎÎÎÎÎ

100 ÎÎÎ

Vdc

Collector–Base Voltage

V CB ÎÎÎÎÎ

100 ÎÎÎ

Vdc

Emitter–Base Voltage

V EB ÎÎÎÎÎÎÎÎÎ

5.0

Vdc

Collector Current – Continuous

Peak

I C ÎÎÎÎÎÎÎÎÎ

Adc

Base Current ÎÎÎÎ

I B ÎÎÎÎÎÎÎÎÎ

0.5 ÎÎÎ

Adc

CASE 1–07

TO–204AA

(TO–3)

Total Device Dissipation @ T C =

P D ÎÎÎÎÎÎÎÎÎ

160

0.915

Watts

Derate above 25

Operating and Storage Junction

Temperature Range

T J ,T stg ÎÎÎÎÎÎÎÎÎ

–65 to +200

*THERMAL CHARACTERISTICS

Characteristic

Symbol ÎÎÎÎÎÎ

Max

Unit

Thermal Resistance, Junction to Case ÎÎÎÎÎ

R q JC ÎÎÎÎÎÎ

1.09

C/W

*Indicates JEDEC Registered Data.

160

140

120

100

125

150

175

200

Figure 1. Power Derating

W Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 1

Publication Order Number:

2N6284/D

NPN

T C , CASE TEMPERATURE ( ° C)

2N6283 2N6284 2N6286 2N6287

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I C = 0.1 Adc, I B = 0)

V CEO(sus) ÎÎÎ

Vdc

2N6283, 2N6286

2N6284, 2N6287

100

–

Collector Cutoff Current

(V CE = 40 Vdc, I B = 0)

(V CE = 50 Vdc, I B = 0)

I CEO

mAdc

–

1.0

Collector Cutoff Current

(V CE = Rated V CB , V BE(off) = 1.5 Vdc)

(V CE = Rated V CB , V BE(off) = 1.5 Vdc, T C = 150 C)

I CEX ÎÎÎ

mAdc

–

0.5

5.0

Emitter Cutoff Current

(V BE = 5.0 Vdc, I C = 0)

I EBO

– ÎÎÎÎ

2.0 ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(I C = 10 Adc, V CE = 3.0 Vdc)

(I C = 20 Adc, V CE = 3.0 Vdc)

h FE ÎÎÎ

–

750

100

18,000

–

Collector–Emitter Saturation Voltage

(I C = 10 Adc, I B = 40 mAdc)

(I C = 20 Adc, I B = 200 mAdc)

V CE(sat)

Vdc

–

2.0

3.0

Base–Emitter On Voltage

(I C = 10 Adc, V CE = 3.0 Vdc)

V BE(on) ÎÎÎ

– ÎÎÎÎ

2.8 ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(I C = 20 Adc, I B = 200 mAdc)

V BE(sat)

–

4.0

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small–Signal Short–Circuit

Forward Current Transfer Ratio

(I C = 10 Adc, V CE = 3.0 Vdc, f = 1.0 MHz)

|h fe |

4.0 ÎÎÎÎ

– ÎÎÎ

MHz

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 0.1 MHz)

C ob

2N6283, 2N6284

2N6286, 2N6287

–

400

600

Small–Signal Current Gain

(I C = 10 Adc, V CE = 3.0 Vdc, f = 1.0 kHz)

h fe ÎÎÎ

300 ÎÎÎÎ

– ÎÎÎ

–

*Indicates JEDEC Registered Data.

(1) Pulse test: Pulse Width = 300

s, Duty Cycle = 2%

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2N6283 2N6284 2N6286 2N6287

V CC

- 30 V

7.0

t s

2N6284 (NPN)

2N6287 (PNP)

R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS

5.0

D 1 MUST BE FAST RECOVERY TYPE e.g.,

1N5825 USED ABOVE I B 100 mA

MSD6100 USED BELOW I B 100 mA

R C

3.0

SCOPE

2.0

TUT

t f

t r

R B

V 2

APPROX

+ 8.0 V

1.0

0.7

0.5

D 1

8.0 k 50

V CC = 30 Vdc

I C /I B = 250

I B1 = I B2

T J = 25 ° C

V 1

APPROX

- 12 V

+ 4.0 V

0.3

0.2

FOR t d AND t r , D 1 IS DISCONNECTED

AND V 2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

25 m s

t d @ V BE(off) = 0 V

t r , t f 10 ns

DUTY CYCLE = 1.0%

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Switching Times

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

P (pk)

0.1

0.07

0.05

0.03

0.02

0.05

R q JC (t) = r(t) R q JC

R q JC = 1.09 ° C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) - T C = P (pk) R q JC (t)

0.02

t 1

0.01

t 2

SINGLE PULSE

DUTY CYCLE, D = t 1 /t 2

0.01 0.01

0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

100

200

300

500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

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2N6283 2N6284 2N6286 2N6287

ACTIVE–REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e. the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 200

0.1 ms

0.5 ms

1.0 ms

5.0

5.0 ms

2.0

C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T J(pk) <

200

1.0

T J = 200 ° C

0.5

0.2

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ T C = 25 ° C

SINGLE PULSE

C. T J(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

0.1

0.05

2.0

5.0

100

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. 2N6284, 2N6287

10,000

1000

5000

T J = 25 ° C

V CE = 3.0 Vdc

I C = 10 A

700

T J = 25 ° C

2000

1000

500

C ib

300

200

100

200

C ob

2N6284 (NPN)

2N6287 (PNP)

2N6284 (NPN)

2N6287 (PNP)

1.0

2.0

5.0 10

50 100 200

500

1000

100

0.1

0.2

0.5

1.0 2.0

5.0

100

f, FREQUENCY (kHz)

V R , REVERSE VOLTAGE (VOLTS)

Figure 6. Small–Signal Current Gain

Figure 7. Capacitance

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2N6283 2N6284 2N6286 2N6287

NPN

2N6284

PNP

2N6287

20,000

30,000

V CE = 3.0 V

20,000

V CE = 3.0 V

10,000

T J = 150 ° C

7000

T J = 150 ° C

10,000

5000

7000

3000

2000

5000

25 ° C

3000

2000

1000

-55 ° C

700

1000

500

300

700

500

200

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

7.0

300

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

3.0

T J = 25 ° C

2.6

I C = 5.0 A

10 A

15 A

2.6

I C = 5.0 A

10 A

15 A

2.2

1.8

1.4

1.0

0.5

0.7

1.0

2.0 3.0

5.0 7.0

1.0

0.5

0.7

1.0

2.0 3.0

5.0 7.0

I B , BASE CURRENT (mA)

Figure 9. Collector Saturation Region

3.0

T J = 25 ° C

2.5

2.0

1.5

V BE(sat) @ I C /I B = 250

1.5

V BE(sat) @ I C /I B = 250

1.0

V BE @ V CE = 3.0 V

1.0

V BE @ V CE = 3.0 V

V CE(sat) @ I C /I B = 250

0.5

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

7.0

0.5

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

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