2N5681 2N5682.pdf

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SILICON NPN TRANSISTORS
®
2N5681
2N5682
SILICON NPN TRANSISTORS
n
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTOR
n
APPLICATIONS
n
GENERAL PURPOSE SWITCHING
GENERAL PURPOSE AMPLIFIERS
n
DESCRIPTION
The 2N5681, 2N5682 are high voltage silicon
epitaxial planar NPN transistors in Jedec TO-39
metal case intended for use as drivers for high
power transistors in general purpose, amplifier
and switching applications.
The 2N5682 complementary PNP type is
2N5680.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N5681
2N5682
V CBO
Collector-Base Voltage (I E = 0)
100
120
V
V CEO
Collector-Emitter Voltage (I B = 0)
100
120
V
V EBO
Emitter-Base Voltage (I C = 0)
4
V
I C
Collector Current
1
A
I B
Base Current
0.5
A
P tot
Total Dissipation at T c
£
25 o C
10
W
P tot
Total Dissipation at T amb
£
50 o C
1
W
T stg
Storage Temperature
-65 to 200
o C
T j
Max. Operating Junction Temperature
200
o C
December 2000
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2N5681 / 2N5682
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o C/W
o
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CEV
Collector Cut-off
Current (V BE = -1.5V)
for 2N5681 V CE = 100 V
for 2N568 2 V CE = 120 V
T c = 150 o C
for 2N5681 V CE = 100 V
for 2N5682 V CE = 120 V
1
1
m
A
m
A
1
1
m
A
m
A
I CBO
Collector Cut-off
Current (I E = 0)
for 2N5681 V CB = 100 V
for 2N5682 V CB = 120 V
1
1
m
A
m
A
I CEO
Collector Cut-off
Current (I B = 0)
for 2N5681 V CB = 70 V
for 2N5682 V CB = 80 V
10
10
m
A
m
A
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 4 V
1
m
A
V CEO(sus) *
Collector-Emitter
Sustaining Voltage
I C = 10 mA
for 2N5681
for 2N5682
100
120
V
V
V CE(sat) *
Collector-Emitter
Saturation Voltage
I C = 250 mA I B = 25 mA
I C = 500 mA I B = 50 mA
I C = 1 A I B = 200 mA
0.6
1
2
V
V
V
V BE *
Base-Emitter Voltage
I C = 250 mA V CE = 2 V
1
V
h FE
*
DC Current Gain
I C = 250 mA V CE = 2 V
I C = 1 A V CE = 2 V
40
5
150
h fe
Small Signal Current
Gain
I C = 0.2 A V CE = 1.5 V f = 1KHz
40
f T
Transition frequency
I C = 100 mA V CE = 10 V f =10MHz
30
MHz
C CBO
Collector Base
Capacitance
I E = 0 V CB = 20 V f = 1MHz
50
pF
* Pulsed: Pulse duration = 300 m s, duty cycle 1.5 %
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C/W
23103820.007.png 23103820.008.png 23103820.009.png 23103820.001.png
2N5681 / 2N5682
TO-39 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45 o (typ.)
G
D
A
I
H
L
P008B
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2N5681 / 2N5682
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
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