2n5655-d.pdf

ON Semiconductor

Plastic NPN Silicon

High-Voltage Power Transistor

2N5655

2N5657

. . . designed for use in line–operated equipment such as audio

output amplifiers; low–current, high–voltage converters; and AC line

relays.

•

Excellent DC Current Gain –

h FE = 30–250 @ I C = 100 mAdc

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250–350 VOLTS

20 WATTS

•

Current–Gain – Bandwidth Product –

f T = 10 MHz (Min) @ I C = 50 mAdc

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

Symbol

2N5655

2N5657

Unit

Collector–Emitter Voltage

V CEO

250

350

Vdc

Collector–Base Voltage

V CB

275

375

Vdc

Emitter–Base Voltage

V EB

6.0

Vdc

Collector Current – Continuous

Peak

I C

0.5

1.0

Adc

CASE 77–09

TO–225AA TYPE

Base Current

I B ÎÎÎÎÎÎÎÎ

0.25

Adc

Total Power Dissipation @ T C = 25

P D ÎÎÎÎÎÎÎÎ

0.16

Watts

Derate above 25

Operating and Storage Junction

Temperature Range

T J , T stg ÎÎÎÎÎÎÎÎ

–65 to +150 ÎÎÎ

THERMAL CHARACTERISTICS

Characteristic ÎÎÎÎÎ

Symbol ÎÎÎÎÎÎ

Max ÎÎÎ

Unit

Thermal Resistance, Junction to Case ÎÎÎÎÎ

q JC ÎÎÎÎÎÎ

6.25 ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

50 mH

200

H g RELAY

TO SCOPE

6.0 V

50 V

300

1.0

0 25

100

125

150

T C , CASE TEMPERATURE ( ° C)

Figure 1. Power Derating

Figure 2. Sustaining Voltage Test Circuit

Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.

W Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 6

Publication Order Number:

2N5655/D

2N5655 2N5657

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

2N5655

V CEO(sus) ÎÎÎ

250

350

–

Vdc

(I C = 100 mAdc (inductive), L = 50 mH)

2N5657

Collector–Emitter Breakdown Voltage

2N5655

V (BR)CEO

250

350

–

Vdc

(I C = 1.0 mAdc, I B = 0)

2N5657

Collector Cutoff Current

(V CE = 150 Vdc, I B = 0)

I CEO ÎÎÎ

mAdc

2N5655

–

0.1

(V CE = 250 Vdc, I B = 0)

2N5657

Collector Cutoff Current

(V CE = 250 Vdc, V EB(off) = 1.5 Vdc)

I CEX

mAdc

2N5655

–

0.1

1.0

(V CE = 350 Vdc, V EB(off) = 1.5 Vdc)

2N5657

(V CE = 150 Vdc, V EB(off) = 1.5 Vdc, T C = 100

2N5655

(V CE = 250 Vdc, V EB(off) = 1.5 Vdc, T C = 100

2N5657

Collector Cutoff Current

(V CB = 275 Vdc, I E = 0)

I CBO ÎÎÎ

m Adc

2N5655

–

(V CB = 375 Vdc, I E = 0)

2N5657

Emitter Cutoff Current (V EB = 6.0 Vdc, I C = 0)

I EBO ÎÎÎ

– ÎÎÎÎ

10 ÎÎÎ

m Adc

ON CHARACTERISTICS

DC Current Gain (1)

(I C = 50 mAdc, V CE = 10 Vdc)

(I C = 100 mAdc, V CE = 10 Vdc)

(I C = 250 mAdc, V CE = 10 Vdc)

(I C = 500 mAdc, V CE = 10 Vdc)

h FE

–

5.0

–

250

–

Collector–Emitter Saturation Voltage (1)

(I C = 100 mAdc, I B = 10 mAdc)

(I C = 250 mAdc, I B = 25 mAdc)

(I C = 500 mAdc, I B = 100 mAdc)

V CE(sat) ÎÎÎ

Vdc

–

1.0

2.5

Base–Emitter Voltage (1) (I C = 100 mAdc, V CE = 10 Vdc)

V BE

– ÎÎÎÎ

1.0 ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product (2) (I C = 50 mAdc, V CE = 10 Vdc, f = 10 MHz) ÎÎÎÎÎ

f T ÎÎÎ

10 ÎÎÎÎ

– ÎÎÎ

MHz

Output Capacitance (V CB = 10 Vdc, I E = 0, f = 100 kHz)

C ob

–

Small–Signal Current Gain (I C = 100 mAdc, V CE = 10 Vdc, f = 1.0 kHz)

h fe

–

2.0%.

(2) f T is defined as the frequency at which |h fe | extrapolates to unity.

300

s, Duty Cycle

1.0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 3 is based on T J(pk) = 150

0.5

m s

T J = 150 ° C

500

m s

0.2

1.0 ms

0.1

C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T J(pk)

Second Breakdown Limit

Thermal Limit @ T C = 25 ° C

Bonding Wire Limit

0.05

C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

Curves apply below rated V CEO

0.02

2N5655

2N5657

0.01

30 40

100

200

300 400

600

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Active–Region Safe Operating Area

http://onsemi.com

*Indicates JEDEC Registered Data for 2N5655 Series.

(1) Pulse Test: Pulse Width

150

2N5655 2N5657

300

200

V CE = 10 V

V CE = 2.0 V

100

T J = +150 ° C

+100 ° C

+25 ° C

-55 ° C

10 1.0

2.0

3.0

5.0

7.0

100

200

300

500

I C , COLLECTOR CURRENT (mA)

Figure 4. Current Gain

1.0

300

200

T J = +25 ° C

0.8

V BE(sat) @ I C /I B = 10

C ib

100

V BE @ V CE = 10 V

0.6

0.4

V CE(sat) @ I C /I B = 10

0.2

T J = +25 ° C

C ob

I C /I B = 5.0

100

200 300

500

0.1

0.2

0.5

1.0

2.0

5.0

100

I C , COLLECTOR CURRENT (mA)

V R , REVERSE VOLTAGE (VOLTS)

Figure 5. “On” Voltages

Figure 6. Capacitance

I C /I B = 10

V CC = 300 V, V BE(off) = 2.0 V

(2N5657, only)

V CC = 100 V, V BE(off) = 0 V

5.0

t r

I C /I B = 10

5.0

2.0

1.0

0.5

2.0

t s

t d

1.0

t f

0.2

0.1

0.5

V CC = 100 V

0.05

0.02

0.2

V CC = 300 V

(Type 2N5657, only)

0.01

1.0

2.0

5.0

100

200

500

0.1

1.0

2.0

5.0

100

200

500

I C , COLLECTOR CURRENT (mA)

Figure 7. Turn–On Time

Figure 8. Turn–Off Time

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2N5655 2N5657

PACKAGE DIMENSIONS

CASE 77–09

ISSUE W

TO–225AA

–B–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–A–

INCHES

MILLIMETERS

DIM MIN MAX MIN MAX

A 0.425

0.435

10.80

11.04

B 0.295

0.305

7.50

7.74

C 0.095

0.105

2.42

2.66

D 0.020

0.026

0.51

0.66

F 0.115

0.130

2.93

3.30

G 0.094 BSC

2.39 BSC

H 0.050

0.095

1.27

2.41

J 0.015

0.025

0.39

0.63

K 0.575

0.655

14.61

16.63

M 5 TYP

5 TYP

Q 0.148

0.158

3.76

4.01

R 0.045

0.065

1.15

1.65

S 0.025

0.035

0.64

0.88

0.25 (0.010)

U 0.145

0.155

3.69

3.93

2 PL

V 0.040

---

1.02

---

0.25 (0.010)

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

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2N5655/D

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