2N5486.PDF
(
107 KB
)
Pobierz
337921144 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
2N5484; 2N5485; 2N5486
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
December 1997
Philips Semiconductors
Product specification
N-channel field-effect transistors
2N5484; 2N5485; 2N5486
FEATURES
QUICK REFERENCE DATA
·
Low noise
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
·
Interchangeability of drain and
source connections
V
DS
drain-source
voltage
-
25
V
·
High gain.
I
DSS
drain current
V
DS
= 15 V; V
GS
= 0
2N5484
1
5
mA
DESCRIPTION
2N5485
4
10
mA
N-channel, symmetrical, silicon
junction FETs in a SOT54 (TO-92)
envelope, intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
2N5486
8
20
mA
P
tot
total power
dissipation
up to T
amb
= 25
°
C
-
400
mW
V
GS(off)
gate-source
cut-off voltage
V
DS
= 15 V; I
D
= 1 nA
2N5484
-
0.3
-
3
V
PINNING - SOT54 (TO-92)
2N5485
-
0.5
-
4
V
PIN
DESCRIPTION
2N5486
-
2
-
6
V
1
gate
Y
fs
ê
common source
transfer
admittance
V
DS
= 15 V; V
GS
=0;
f = 1 kHz
2
source
3
drain
2N5484
3
6
mS
2N5485
3.5
7
mS
2N5486
4
8
mS
handbook, halfpage
1
2
3
g
d
s
MAM042
Fig.1 Simplified outline and symbol.
December 1997
2
÷
Philips Semiconductors
Product specification
N-channel field-effect transistors
2N5484; 2N5485; 2N5486
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
25
V
V
GSO
gate-source voltage
-
-
25
V
V
GDO
gate-drain voltage
-
-
25
V
I
G
DC forward gate current
-
10
mA
P
tot
total power dissipation
up to T
amb
= 25
°
C (note 1)
-
400
mW
T
stg
storage temperature
-
65
+
150
°
C
T
j
junction temperature
-
150
°
C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1)
350 K/W
Note
1. Device mounted on a printed circuit board; maximum lead length 3 mm; mounting pad for drain lead minimum
10 mm
´
10 mm.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)GSS
gate-source breakdown voltage
V
DS
= 0; I
G
=
-
1
m
A
-
25
-
V
I
DSS
drain current
V
DS
=15V; V
GS
=0
2N5484
1
5
mA
2N5485
4
10
mA
2N5486
8
20
mA
I
GSS
reverse gate leakage current
V
DS
= 0; V
GS
=
-
15 V
-
-
1
nA
V
GSS
gate-source forward voltage
V
DS
= 0; I
G
= 1 mA
-
1
V
V
GS(off)
gate-source cut-off voltage
V
DS
= 15 V; I
D
= 1 nA
2N5484
-
0.3
-
3
V
2N5485
-
0.5
-
4
V
2N5486
-
2
-
6
V
÷
Y
fs
ê
common source transfer admittance
V
DS
= 15 V; V
GS
= 0
2N5484
3
6
mS
2N5485
3.5
7
mS
2N5486
4
8
mS
÷
Y
os
ê
common source output admittance
V
DS
=15V; V
GS
=0
2N5484
-
50
m
S
2N5485
-
60
m
S
2N5486
-
75
m
S
December 1997
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
2N5484; 2N5485; 2N5486
DYNAMIC CHARACTERISTICS
T
j
= 25
°
C; V
DS
= 15 V; V
GS
= 0
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
is
input capacitance
f = 1 MHz
-
-
5
pF
C
os
output capacitance
f = 1 MHz
-
-
2
pF
C
rs
feedback capacitance
f = 1 MHz
-
-
1
pF
g
is
common source input conductance
2N5484
f = 100 MHz
100
-
-
m
S
2N5485; 2N5486
f = 400 MHz
-
-
1
mS
g
fs
common source transfer conductance
2N5484
f = 100 MHz
2.5
-
-
mS
2N5485
f = 400 MHz
3
-
1
mS
2N5486
f = 400 MHz
3.5
-
1
mS
g
os
common source output conductance
2N5484
f = 100 MHz
-
-
75
m
S
2N5485; 2N5486
f = 400 MHz
-
-
100
m
S
V
n
equivalent input noise voltage
f = 100 Hz
-
5
-
nV/
Ö
Hz
MRC168
MRC169
25
10
handbook, halfpage
handbook, halfpage
I
DSS
(mA)
Y
fs
(mS)
20
8
15
6
10
4
5
2
0
0
2
4
6
0
0
2
4
6
–V
GS(off)
–V
GS(off)
(V)
(V)
V
DS
= 15 V; T
j
=25
°
C; typical values.
V
DS
= 15 V; T
j
=25
°
C; typical values.
Fig.2 Drain current as a function of gate-source
cut-off voltage.
Fig.3 Common source transfer admittance as a
function of gate-source cut-off voltage.
December 1997
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
2N5484; 2N5485; 2N5486
80
MRC167
MRC135
2
handbook, halfpage
handbook, halfpage
G
os
m
I
D
(mA)
V
GS
= 0 V
60
40
1
-
0.25 V
20
-
0.5 V
0
0
1
2
3
4
5
6
0
0
4
8
12
16
–V
GS(off)
(V)
V
DS
(V)
V
DS
= 15 V; T
j
=25
°
C; typical values.
2N5484
T
j
=25
°
C.
Fig.4 Common source output conductance as a
function of gate-source cut-off voltage.
Fig.5 Typical output characteristics.
MRC136
MRC137
8
8
handbook, halfpage
handbook, halfpage
I
D
(mA)
V
GS
= 0 V
I
D
(mA)
V
GS
= 0 V
6
6
-
0.5 V
-
1 V
4
4
-
1 V
-
2 V
2
2
-
1.5 V
0
0
0
4
8
12
16
0
4
8
12
16
V
DS
(V)
V
DS
(V)
2N5485
T
j
=25
°
C.
2N5486
T
j
=25
C.
Fig.6 Typical output characteristics.
Fig.7 Typical output characteristics.
December 1997
5
( S)
°
Plik z chomika:
aos.artur2
Inne pliki z tego folderu:
2N2905_CNV_2.pdf
(55 KB)
2n6724 2n67245.pdf
(27 KB)
2n1792.pdf
(189 KB)
2N1613.pdf
(61 KB)
2N1711.PDF
(61 KB)
Inne foldery tego chomika:
• Katalogi - Wielka baza układów scalonych
• Katalogi tranzystorów
4xxx
74xxx
7xxx
Zgłoś jeśli
naruszono regulamin