2n5209-d.pdf

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5209/D
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage
V CEO
50
Vdc
Collector – Base Voltage
V CBO
50
Vdc
Emitter – Base Voltage
V EBO
4.0
Vdc
Collector Current — Continuous
I C
50
mAdc
Total Device Dissipation @ T A = 25 ° C
Derate above 25 ° C
P D
625
5.0
mW
mW/ ° C
Total Device Dissipation @ T C = 25 ° C
Derate above 25 ° C
P D
1.5
12
Watts
mW/ ° C
Operating and Storage Junction
Temperature Range
T J , T stg
– 55 to +150
° C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R JA
200
° C/W
Thermal Resistance, Junction to Case
R JC
83.3
° C/W
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
50
—
Vdc
Collector – Base Breakdown Voltage
(I C = 0.1 mAdc, I E = 0)
V (BR)CBO
50
—
Vdc
Collector Cutoff Current
(V CB = 35 Vdc, I E = 0)
I CBO
—
50
nAdc
Emitter Cutoff Current
(V EB = 3.0 Vdc, I C = 0)
I EBO
—
50
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
W Motorola, Inc. 1996
23102762.008.png 23102762.009.png 23102762.010.png 23102762.011.png 23102762.001.png
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 100 m Adc, V CE = 5.0 Vdc)
h FE
—
2N5209
2N5210
100
200
300
600
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
2N5209
2N5210
150
250
—
—
(I C = 10 mAdc, V CE = 5.0 Vdc) (1)
2N5209
2N5210
150
250
—
—
Collector – Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
V CE(sat)
—
0.7
Vdc
Base – Emitter On Voltage
(I C = 1.0 mAdc, V CE = 5.0 mAdc)
V BE(on)
—
0.85
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(I C = 500
f T
30
—
MHz
m
Adc, V CE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
C cb
—
4.0
pF
Small–Signal Current Gain
(I C = 1.0 mAdc, V CE = 5.0 Vdc, f = 1.0 kHz)
h fe
—
2N5209
2N5210
150
250
600
900
Noise Figure
(I C = 20 m Adc, V CE = 5.0 Vdc, R S = 22 k W ,
NF
dB
2N5209
—
—
3.0
2.0
f = 1.0 kHz)
2N5210
(I C = 20 m Adc, V CE = 5.0 Vdc, R S = 10 k W ,
2N5209
—
—
4.0
3.0
f = 1.0 kHz)
2N5210
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
R S
i n
e n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
23102762.002.png 23102762.003.png
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25
C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
20
I C = 10 mA
R S
9
0
R S
9
0
3.0 mA
f = 10 Hz
10
10
100 Hz
1.0 mA
7.0
7.0
10 kHz
1.0 kHz
5.0
5.0
300
m
A
100 kHz
3.0
3.0
0.01 0.02
10
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
f, FREQUENCY (Hz)
I C , COLLECTOR CURRENT (mA)
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
10
20
BANDWIDTH = 1.0 Hz
7.0
5.0
I C = 10 mA
16
3.0
BANDWIDTH = 10 Hz to 15.7 kHz
2.0
3.0 mA
1.0 mA
12
1.0
0.7
I C = 1.0 mA
300 m A
8.0
500 m A
100 m A
10
0.5
0.3
100 m A
m
4.0
0.2
10 m A
30 m A
R S 9 0
0.1
0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
R S , SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200
20
BANDWIDTH = 1.0 Hz
I C = 10 mA
100
100 m A
16
I C = 10 mA
3.0 mA
70
3.0 mA
1.0 mA
300 m A
1.0 mA
50
12
30
300 m A
20
30
m
8.0
10
100 m A
10
m
A
4.0
30
m
A
7.0
10 m A
5.0
BANDWIDTH = 1.0 Hz
3.0
0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R S , SOURCE RESISTANCE (OHMS)
R S , SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
Figure 6. Total Noise Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
°
A
A
23102762.004.png
4.0
3.0
V CE = 5.0 V
2.0
T A = 125 ° C
25 ° C
1.0
0.7
– 55 ° C
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1.0
– 0.4
T J = 25 ° C
0.8
– 0.8
0.6
V BE @ V CE = 5.0 V
– 1.2
0.4
– 1.6
T J = 25 ° C to 125 ° C
0.2
– 2.0
– 55 ° C to 25 ° C
V CE(sat) @ I C /I B = 10
0
– 2.4
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
8.0
500
6.0
T J = 25 ° C
300
4.0
C ob
C eb
C ib
3.0
200
C cb
2.0
100
1.0
70
V CE = 5.0 V
T J = 25 ° C
0.8
0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
50
1.0
2.0
3.0
5.0
7.0 10
20 30
50 70 100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
23102762.005.png
PACKAGE DIMENSIONS
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATIN G
PLANE
K
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
D
A
0.175 0.205
4.45
5.20
B
0.170 0.210
4.32
5.33
C
0.125 0.165
3.18
4.19
X X
J
D
0.016 0.022
0.41
0.55
F
0.016 0.019
0.41
0.48
G
G 0.045 0.055
1.15
1.39
H
H
0.095 0.105
2.42
2.66
SECTION X–X
J
0.015 0.020
0.39
0.50
V
C
K
0.500
––– 12.70
–––
L
0.250
–––
6.35
–––
1
N
0.080 0.105
2.04
2.66
N
P
––– 0.100
–––
2.54
R
0.115
–––
2.93
–––
N
V
0.135
–––
3.43
–––
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
23102762.006.png 23102762.007.png

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