2n4918-d.pdf

ON Semiconductor

Medium-Power Plastic PNP

Silicon Transistors

2N4918

thru

2N4920

...designed for driver circuits, switching, and amplifier

applications. These high–performance plastic devices feature:

•

*ON Semiconductor Preferred Device

Low Saturation Voltage —

V CE(sat) = 0.6 Vdc (Max) @ I C = 1.0 Amp

3 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

30 WATTS

•

Excellent Power Dissipation Due to Thermopad Construction —

P D = 30 W @ T C = 25

•

Excellent Safe Operating Area

•

Gain Specified to I C = 1.0 Amp

•

Complement to NPN 2N4921, 2N4922, 2N4923

*MAXIMUM RATINGS

Ratings ÎÎÎ

Symbol ÎÎÎÎ

2N4918 ÎÎÎ

2N4919 ÎÎÎÎ

2N4920 ÎÎÎ

Unit

Collector–Emitter Voltage ÎÎÎ

V CEO ÎÎÎÎ

40 ÎÎÎ

60 ÎÎÎÎ

80 ÎÎÎ

Vdc

Collector–Base Voltage ÎÎÎ

V CB ÎÎÎÎ

40 ÎÎÎ

60 ÎÎÎÎ

80 ÎÎÎ

Vdc

CASE 77–09

TO–225AA TYPE

Emitter–Base Voltage

V EB ÎÎÎÎÎÎÎÎÎ

5.0

Vdc

Collector Current — Continuous (1) ÎÎÎ

I C * ÎÎÎÎÎÎÎÎÎ

1.0

3.0

Adc

Base Current

I B ÎÎÎÎÎÎÎÎÎ

1.0

Adc

Total Power Dissipation @ T C = 25

P D ÎÎÎÎÎÎÎÎÎ

0.24

Watts

Derate above 25

Operating & Storage Junction

Temperature Range

T J , T stg ÎÎÎÎÎÎÎÎÎ

–65 to +150 ÎÎÎ

THERMAL CHARACTERISTICS (2)

Characteristic

Symbol ÎÎÎÎÎÎ

Max

Unit

Thermal Resistance, Junction to Case ÎÎÎÎÎ

q JC

4.16

C/W

*Indicates JEDEC Registered Data for 2N4918 Series.

(1) The 1.0 Amp maximum I C value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current–handling capability of the

device (See Figure 5).

(2) Recommend use of thermal compound for lowest thermal resistance.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

W Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9

Publication Order Number:

2N4918/D

2N4918 thru 2N4920

0 25

100

125

150

T C , CASE TEMPERATURE ( ° C)

Figure 1. Power Derating

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2N4918 thru 2N4920

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I C = 0.1 Adc, I B = 0)

V CEO(sus) ÎÎÎ

Vdc

2N4918

2N4919

2N4920

—

Collector Cutoff Current

(V CE = 20 Vdc, I B = 0)

I CEO

mAdc

2N4918

—

0.5

(V CE = 30 Vdc, I B = 0)

2N4919

(V CE = 40 Vdc, I B = 0)

2N4920

Collector Cutoff Current

(V CE = Rated V CEO , V BE(off) = 1.5 Vdc)

(V CE = Rated V CEO , V BE(off) = 1.5 Vdc, T C = 125 C)

I CEX

mAdc

—

0.1

0.5

Collector Cutoff Current

(V CB = Rated V CB , I E = 0)

I CBO ÎÎÎ

— ÎÎÎÎ

0.1 ÎÎÎ

mAdc

Emitter Cutoff Current

(V BE = 5.0 Vdc, I C = 0)

I EBO

—

1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (1)

(I C = 50 mAdc, V CE = 1.0 Vdc)

(I C = 500 mAdc, V CE = 1.0 Vdc)

(I C = 1.0 Adc, V CE = 1.0 Vdc)

h FE

—

150

—

Collector–Emitter Saturation Voltage (1)

(I C = 1.0 Adc, I B = 0.1 Adc)

V CE(sat) ÎÎÎ

— ÎÎÎÎ

0.6 ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (1)

(I C = 1.0 Adc, I B = 0.1 Adc)

V BE(sat) ÎÎÎ

— ÎÎÎÎ

1.3 ÎÎÎ

Vdc

Base–Emitter On Voltage (1)

(I C = 1.0 Adc, V CE = 1.0 Vdc)

V BE(on)

—

1.3

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product (I C = 250 mAdc, V CE = 10 Vdc, f = 1.0 MHz)

f T

3.0 ÎÎÎÎ

— ÎÎÎ

MHz

Output Capacitance (V CB = 10 Vdc, I E = 0, f = 100 kHz)

C ob

— ÎÎÎÎ

100 ÎÎÎ

Small–Signal Current Gain (I C = 250 mAdc, V CE = 10 Vdc, f = 1.0 kHz)

h fe

25 ÎÎÎÎ

— ÎÎÎ

—

*Indicates JEDEC Registered Data.

(1) Pulse Test: PW

300

s, Duty Cycle

2.0%

V BE(off)

5.0

V in

V CC

3.0

V CC = 30 V

I C /I B = 20

I C /I B = 10, UNLESS NOTED

R C

T J = 25 ° C

T J = 150 ° C

APPROX

-11 V

2.0

V in

SCOPE

t 1

R B

C jd <<C eb

1.0

0.7

0.5

V CC = 30 V

t r

t 2

APPROX 9.0 V

+4.0 V

V CC = 60 V

0.3

0.2

R B and R C

varied to

obtain desired

current levels

t d

V CC = 60 V

V BE(off) = 2.0 V

V in

t 1 < 15 ns

100 < t 2 < 500 m s

t 3 < 15 ns

DUTY CYCLE 9 2.0%

0.1

V CC = 30 V

V BE(off) = 0

APPROX

-11 V

0.07

t 3

0.05

20 30

50 70 100

200

300

500

700 1000

TURN-OFF PULSE

I C , COLLECTOR CURRENT (mA)

Figure 2. Switching Time Equivalent Test Circuit

Figure 3. Turn–On Time

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2N4918 thru 2N4920

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

P (pk)

0.1

0.07

0.05

q JC (t) = r(t) q JC

q JC = 4.16 ° C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) - T C = P (pk) q JC (t)

0.01

t 1

0.03

0.02

SINGLE PULSE

t 2

DUTY CYCLE, D = t 1 /t 2

0.01 0.01

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

20 30

100

200 300

500

1000

t, TIME (ms)

Figure 4. Thermal Response

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 150

1.0 ms

100 m s

5.0 ms

5.0

2.0

T J = 150 ° C

C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T J(pk)

1.0

0.5

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMIT @ T C = 25 ° C

C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

150

0.2

PULSE CURVES APPLY BELOW

RATED V CEO

0.1

1.0

2.0 3.0

5.0

7.0

100

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

5.0

3.0

I C /I B = 20

3.0

I C /I B = 20

T J = 25 ° C

T J = 150 ° C

2.0

V CC = 30 V

I B1 = I B2

1.0

I C /I B = 10

1.0

0.7

0.5

I C /I B = 10

0.3

0.2

t s 4 = t s - 1/8 t f

0.3

0.2

T J = 25 ° C

T J = 150 ° C

0.1

I B1 = I B2

0.1

0.07

0.05

20 30

50 70

100

200 300

500 700 1000

0.05

20 30

50 70

100

200 300

500 700 1000

I C , COLLECTOR CURRENT (mA)

Figure 6. Storage Time

Figure 7. Fall Time

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2N4918 thru 2N4920

TYPICAL DC CHARACTERISTICS

1000

1.0

700

V CE = 1.0 V

I C = 0.1 A

0.25 A

0.5 A

1.0 A

500

0.8

T J = 150 ° C

300

200

0.6

25 ° C

100

T J = 25 ° C

-55 ° C

0.4

0.2

2.0

3.0 5.0

20 30

100

200 300 500

1000

2000

0.2

0.3 0.5

1.0

2.0

3.0

5.0

100

200

I C , COLLECTOR CURRENT (mA)

I B , BASE CURRENT (mA)

Figure 8. Current Gain

Figure 9. Collector Saturation Region

10 8

1.5

I C = 10 I CES

V CE = 30 V

10 7

1.2

T J = 25 ° C

10 6

I C 9 I CES

0.9

V BE(sat) @ I C /I B = 10

10 5

I C = 2x I CES

0.6

V BE @ V CE = 2.0 V

I CES VALUES

OBTAINED FROM

FIGURE 13

10 4

0.3

V CE(sat) @ I C /I B = 10

10 3

120

150

2.0

3.0

5.0

20 30 50

100 200 300

500 1000

2000

T J , JUNCTION TEMPERATURE ( ° C)

I C , COLLECTOR CURRENT (mA)

Figure 10. Effects of Base–Emitter Resistance

Figure 11. “On” Voltage

10 2

+2.5

10 1

+2.0

+1.5

*APPLIES FOR I C /I B <

h FE @V CE 1.0V

T J = 150 ° C

+1.0

10 0

T J = 100 ° C to 150 ° C

+0.5

-0.5

-1.0

-1.5

-2.0

-2.5

10 -1

* q VC FOR V CE(sat)

T J = -55 ° C to +100 ° C

100 ° C

10 -2

I C = I CES

10 4

V CE = 30 V

q VB FOR V BE

25 ° C

FORWARD

10 3

REVERSE

-0.2

-0.1

+0.1

+0.2

+0.3

+0.4

+0.5

2.0

3.0 5.0

20 30 50

100 200

300 500 1000

2000

V BE , BASE-EMITTER VOLTAGE (VOLTS)

I C , COLLECTOR CURRENT (mA)

Figure 12. Collector Cut–Off Region

Figure 13. Temperature Coefficients

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