2n4123.pdf

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2N4123 NPN General Purpose Amplifier
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2N4123
C B E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V CEO
Collector-Emitter Voltage
30
V
V CBO
Collector- Bas e Voltage
40
V
V EBO
Emitter-Base Voltage
5.0
V
I C
Collector Current - Continuous
200
mA
T J , T stg
Oper ating and Storage J unction Temperature Range
-55 to +150
°
C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4123
P D
Total Device Dissipation
Derate above 25 ° C
625
5.0
mW
mW/ ° C
R q JC
Thermal Resistanc e, J unction to Case
83.3
° C/W
R q JA
Thermal Resistanc e, J unction to Ambient
200
° C/W
ã
2001 Fairchild Semiconductor Corporation
2N4123, Rev A
23102068.005.png 23102068.006.png 23102068.007.png 23102068.008.png
NPN General Purpose Amplifier
(continued)
Electri cal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO
Collector -Emitter Breakdown Voltage* I C = 1.0 mA, I B = 0
30
V
V (BR)CBO
Collector -Base Breakdown Voltage
I C = 10 m A, I E = 0
40
V
V (BR) EBO
Emitter-Base Breakdown Voltage
I E = 10 m A, I C = 0
5.0
V
I CBO
Collector Cutoff Current
V CB = 20 V, I E = 0
50
nA
I EBO
Emitter Cutoff Current
V EB = 3.0 V, I C = 0
50
nA
ON CHARACTERISTICS*
h FE
DC Current Gain
V CE = 1.0 V, I C = 2.0 mA
V CE = 1.0 V, I C = 50 mA
50
25
150
V CE (sat)
Collector-Emitter Saturation Voltage
I C = 50 mA, I B = 5.0 mA
0.3
V
V BE (sat)
Base-Emitter Saturation Voltage
I C = 50 mA, I B = 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
C ob
Output Capacitance
V CB = 5.0 V, f = 100 kHz
4.0
pF
C ib
Input Capac itance
V EB = 0.5 V, f = 0.1 MHz
8.0
pF
h fe
Small- Signal Curr ent Gain
I C = 2.0 mA, V CE = 10 V,
f = 1.0 kHz
I C = 10 mA, V CE = 20 V,
f = 100 MHz
50
200
2.5
f T
Curr ent Gain - Bandwidth Produc t
I C = 10 mA, V CE = 20 V
f = 100 MHz
250
MHz
NF
Noise Figure
V CE = 5.0 V, I C = 100
m
A,
6.0
dB
R S = 1.0 k W ,
B W = 10 Hz to 15.7 kHz
* Pulse Test: Pulse Width £ 300 m s, Duty Cycle £ 2.0%
23102068.001.png
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Puls ed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
V = 5V
CE
0.15
= 10
125 °C
125 °C
300
0.1
25 °C
200
25 °C
100
- 40 °C
0.05
- 40 °C
0
0. 1
1
10
1 00
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
= 10
V = 5V
CE
0.8
- 40 °C
0.8
- 40 °C
25 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4
0.1
1
10
100
0.2
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Capacitance vs
Reverse Bias Voltage
500
10
f = 1.0 MHz
100
V = 30V
CB
5
10
4
3
C ibo
1
2
0.1
C obo
25
50
75
100
125
150
1
0.1
1
10
100
°
T - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
C
C
A
23102068.002.png
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
I = 1.0 mA
R = 200
V = 5.0V
CE
I = 1.0 mA
C
10
S
10
A
R = 1.0 k
I = 50
C
S
I = 5.0 mA
C
8
8
I = 50
A
I = 0.5 mA
R = 200
6
6
S
4
4
I = 100
A
2
I = 100 µ
A, R = 500 Ω
2
C
S
0
0.1
1
10
100
0
0.1
1
10
100
f - FREQUENCY (kHz)
R - SOURCE RESISTANCE ( )
S
k
Current Gain and Phase Angle
vs Frequency
Power Dissipation vs
Ambient Temperature
50
0
1
45
h fe
20
40
40
60
80
100
120
140
160
SOT-223
0.75
35
TO-92
30
25
0.5
20
SOT-23
15
V = 40V
CE
I = 10 mA
C
10
0.25
5
180
0
1
10
100
1000
0
f - FREQUENCY (MHz)
0
25
50
75
100
125
150
TEMPERATURE ( C)
o
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
I c
10
I c
10
I = I =
B1
B2
V = 40V
CC
I = I =
B1
B2
40V
100
15V
100
T = 25°C
J
t @ V = 3.0V
CC
r
T = 125°C
J
2.0V
10
10
t @ V = 0V
CB
d
5
5
1
10
100
1
10
100
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
C
C
C
C
C
23102068.003.png
 
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
I c
10
I c
10
V = 40V
CC
I = I =
B1
B2
I = I =
B1
B2
T = 25°C
J
T = 125°C
J
100
100
T = 125°C
J
T = 25°C
J
10
10
5
1
10
100
5
1
10
100
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
Current Gain
Output Admittance
500
V = 10 V
CE
100
V = 10 V
CE
f = 1.0 kHz
T = 25 C
A
f = 1.0 kHz
T = 25 C
A
o
o
100
10
10
0.1
1
10
1
0.1
1
10
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
C
Input Impedance
Voltage Feedback Ratio
100
V = 10 V
CE
10
V = 10 V
CE
f = 1.0 kHz
T = 25 C
A
f = 1.0 kHz
T = 25 C
A
o
7
o
10
5
4
3
1
2
0.1
0.1
1
10
1
0.1
1
10
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
C
23102068.004.png

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