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SEMICONDUCTOR TECHNICAL DATA
Order this document
by P2N2222A/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
2 3
Collector – Emitter Voltage
V CEO
40
Vdc
Collector – Base Voltage
V CBO
75
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Emitter – Base Voltage
V EBO
6.0
Vdc
Collector Current — Continuous
I C
600
mAdc
Total Device Dissipation @ T A = 25 ° C
Derate above 25 ° C
P D
625
5.0
mW
mW/ ° C
Total Device Dissipation @ T C = 25 ° C
Derate above 25 ° C
P D
1.5
12
Watts
mW/ ° C
Operating and Storage Junction
Temperature Range
T J , T stg
– 55 to +150
° C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R JA
200
° C/W
Thermal Resistance, Junction to Case
R JC
83.3
° C/W
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(I C = 10 mAdc, I B = 0)
V (BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(I C = 10 Adc, I E = 0)
V (BR)CBO
75
—
Vdc
Emitter – Base Breakdown Voltage
(I E = 10 Adc, I C = 0)
V (BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
I CEX
—
10
nAdc
Collector Cutoff Current
(V CB = 60 Vdc, I E = 0)
(V CB = 60 Vdc, I E = 0, T A = 150 ° C)
I CBO
m Adc
—
—
0.01
10
Emitter Cutoff Current
(V EB = 3.0 Vdc, I C = 0)
I EBO
—
10
nAdc
Collector Cutoff Current
(V CE = 10 V)
I CEO
—
10
nAdc
Base Cutoff Current
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
I BEX
—
20
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
W Motorola, Inc. 1996
214193993.011.png 214193993.012.png 214193993.013.png
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc, T A = –55 ° C)
(I C = 150 mAdc, V CE = 10 Vdc) (1)
(I C = 150 mAdc, V CE = 1.0 Vdc) (1)
(I C = 500 mAdc, V CE = 10 Vdc) (1)
h FE
—
35
50
75
35
100
50
40
—
—
—
—
300
—
—
Collector – Emitter Saturation Voltage (1)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
V CE(sat)
Vdc
—
—
0.3
1.0
Base – Emitter Saturation Voltage (1)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
V BE(sat)
Vdc
0.6
—
1.2
2.0
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (2)
(I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)
f T
300
—
MHz
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
C obo
—
8.0
pF
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
C ibo
—
25
pF
Input Impedance
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h ie
k W
2.0
0.25
8.0
1.25
Voltage Feedback Ratio
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h re
X 10 – 4
—
—
8.0
4.0
Small–Signal Current Gain
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h fe
—
50
75
300
375
Output Admittance
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h oe
mhos
5.0
25
35
200
Collector Base Time Constant
(I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz)
rb 4 C c
—
150
ps
Noise Figure
(I C = 100 Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz)
N F
—
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V BE(off) = –2.0 Vdc,
I C = 150 mAdc, I B1 = 15 mAdc) (Figure 1)
t d
—
10
ns
(V CC = 30 Vdc, V BE(off) = –2.0 Vdc,
I C = 150 mAdc, I B1 = 15 mAdc) (Figure 1)
Rise Time
t r
—
25
ns
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc,
I B1 = I B2 = 15 mAdc) (Figure 2)
t s
—
225
ns
I B1 = I B2 = 15 mAdc) (Figure 2)
Fall Time
t f
—
60
ns
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. f T is defined as the frequency at which |h fe | extrapolates to unity.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
214193993.014.png 214193993.001.png 214193993.002.png 214193993.003.png 214193993.004.png 214193993.005.png
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
s,
DUTY CYCLE
m
200
s,
DUTY CYCLE
m
200
+16 V
2.0%
+16 V
9
2.0%
9
0
0
1 k
– 2 V
1 k W
C S * < 10 pF
–14 V
C S * < 10 pF
< 2 ns
< 20 ns
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
– 4 V
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
700
500
T J = 125
°
C
300
200
25 ° C
100
70
–55 ° C
50
30
V CE = 1.0 V
V CE = 10 V
20
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700
1.0 k
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
1.0
T J = 25 ° C
0.8
0.6
I C = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
1.0 to 100
1.0 to 100
214193993.006.png 214193993.007.png
200
500
100
I C /I B = 10
T J = 25 ° C
300
V CC = 30 V
I C /I B = 10
I B1 = I B2
T J = 25 ° C
t 4 s = t s – 1/8 t f
200
70
t r @ V CC = 30 V
t d @ V EB(off) = 2.0 V
t d @ V EB(off) = 0
50
100
30
70
t f
20
50
10
30
20
7.0
5.0
10
3.0
2.0
7.0
5.0 7.0
10
20
30
50
70
100
200
300 500
5.0
5.0 7.0
10
20
30
50
70 100
200 300 500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
Figure 6. Turn – Off Time
10
10
R S = OPTIMUM
R S = SOURCE
R S = RESISTANCE
f = 1.0 kHz
I C = 1.0 mA, R S = 150
W
8.0
8.0
500
m
A, R S = 200
W
I C = 50 m A
100 m A
500 m A
1.0 mA
100
m
A, R S = 2.0 k
W
50
m
A, R S = 4.0 k
W
6.0
6.0
4.0
4.0
2.0
2.0
0.01 0.02 0.05
0.1
0.2 0.5
1.0 2.0 5.0 10 20 50
100
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz)
R S , SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
20
V CE = 20 V
T J = 25
°
C
300
C eb
10
200
7.0
5.0
100
C cb
3.0
70
2.0 0.1
0.2 0.3 0.5 0.7
1.0 2.0 3.0 5.0 7.0 10
20 30 50
50
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
214193993.008.png 214193993.009.png
1.0
+0.5
T J = 25
°
C
0.8
0
R VC for V CE(sat)
V BE(sat) @ I C /I B = 10
1.0 V
– 0.5
0.6
V BE(on) @ V CE = 10 V
– 1.0
0.4
– 1.5
0.2
– 2.0
R VB for V BE
V CE(sat) @ I C /I B = 10
0
0.1
0.2 0.5
1.0 2.0 5.0 10 20
50
100 200 500 1.0 k
– 2.5
0.1
0.2 0.5
1.0 2.0 5.0 10 20
50
100 200 500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
214193993.010.png

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