2SD669.pdf

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11060671 UNPDF
2SD669, 2SD669A
Silicon NPN Epitaxial
ADE-208-899 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1 2 3
1. Emitter
2. Collector
3. Base
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2SD669, 2SD669A
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD669
2SD669A
Unit
Collector to base voltage
V CBO
180
180
V
Collector to emitter voltage
V CEO
120
160
V
Emitter to base voltage
V EBO
5
5
V
Collector current
I C
1.5
1.5
A
Collector peak current
I C(peak)
3
3
A
Collector power dissipation
P C
1
1
W
P C * 1
20
20
W
Junction temperature
Tj
150
150
° C
Storage temperature
Tstg
–55 to +150
–55 to +150
° C
Note: 1. Value at T C = 25 ° C.
2
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2SD669, 2SD669A
Electrical Characteristics (Ta = 25°C)
2SD669
2SD669A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V (BR)CBO
180 —
—
180 —
—
V
I C = 1 mA, I E = 0
Collector to emitter
breakdown voltage
V (BR)CEO
120 —
—
160 —
—
V
I C = 10 mA, R BE = ¥
Emitter to base
breakdown voltage
V (BR)EBO
5
——5
——VI E = 1 mA, I C = 0
Collector cutoff current I CBO
——0——0A CB = 160 V, I E = 0
DC current transfer ratio h FE1 * 1
60
—
320 60
—
200
V CE = 5 V, I C = 150 mA* 2
h FE2
30
—
—
30
—
—
V CE = 5 V, I C = 500 mA* 2
Collector to emitter
saturation voltage
V CE(sat)
——1 ——1 V I C = 500 mA,
I B = 50 mA* 2
Base to emitter voltage V BE
—
—
1.5
—
—
1.5
V
V CE = 5 V, I C = 150 mA* 2
Gain bandwidth product f T
—
140 —
—
140 —
MHz V CE = 5 V, I C = 150 mA* 2
Collector output
capacitance
Cob
—
14
—
—
14
—
pF
V CB = 10 V, I E = 0,
f = 1 MHz
Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows.
2. Pulse test.
B
C
D
2SD669
60 to 120
100 to 200 160 to 320
2SD669A
60 to 120
100 to 200 —
Maximum Collector Dissipation
Curve
Area of Safe Operation
30
3
(13.3 V, 1.5 A)
1.0
20
(40 V, 0.5 A)
0.3
0.1
DC Operation(T C = 25
°
C)
10
(120 V, 0.04 A)
0.03
(160 V, 0.02A)
2SD669A
2SD669
0.01
0
50
100
150
1
100
Collector to emitter voltage V CE (V)
3
10
30
300
Case temperature T C ( ° C)
3
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2SD669, 2SD669A
Typical Output Characteristecs
Typical Transfer Characteristics
1.0
500
T C = 25 ° C
200
100
V CE = 5 V
0.8
0.6
50
0.4
20
10
5
0.2
0.5 mA
2
I B = 0
1
0
10 20
Collector to emitter voltage V CE (V)
30
40
50
0
0.2
0.4
0.6
0.8
1.0
Base to emitter voltage V BE (V)
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
300
1.2
I C = 10 I B
250
1.0
200
0.8
150
0.6
100
0.4
50
V CE = 5 V
0.2
1
0
1
3
10
30
100
300
1,000 3,000
1
3
10
30
100
300
1,000
Collector current I C (mA)
Collector current I C (mA)
4
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2SD669, 2SD669A
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
1.2
240
I C = 10 I B
V CE = 5 V
Ta = 25 ° C
1.0
200
0.8
160
0.6
120
0.4
80
0.2
40
0
1
3
10
30
100
300
1,000
0
10
30
Collector current I C (mA)
100
300
1,000
Collector current I C (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
f = 1 MHz
I E = 0
50
20
10
5
2
1
2
Collector to base voltage V CB (V)
5
10
20
50
100
5
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