2SC5584.pdf

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2SC5584
Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0 ± 0.5
5.0 ± 0.3
(3.0)
φ 3.3 ± 0.2
Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
(1.5)
2.0 ± 0.3
3.0 ± 0.3
1.0 ± 0.2
(1.5)
2.7 ± 0.3
Absolute Maximum Ratings T C
=
25
°
C
0.6 ± 0.2
Parameter
Symbol
Rating
Unit
5.45 ± 0.3
Collector to base voltage
V CBO
1 500
V
10.9 ± 0.5
Collector to emitter voltage
V CES
1 500
V
1: Base
2: Collector
3: Emitter
TOP-3L Package
V CEO
600
V
123
Emitter to base voltage
V EBO
7
V
Peak collector current
I CP
30
A
Collector current
I C
20
A
Marking Symbol: C5584
Base current
I B
8
A
Internal Connection
Collector power T C
=
25
°
C
P C
150
W
C
dissipation
T a
=
25
°
C
3.5
Junction temperature
T j
150
°
C
B
Storage temperature
T stg
−
55 to
+
150
°
C
E
Electrical Characteristics T C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I CBO
V CB = 1 000 V, I E = 0
50
µA
V CB = 1 500 V, I E = 0
1
mA
Emitter cutoff current
I EBO
V EB = 7 V, I C = 0
50
µA
Forward current transfer ratio
h FE
V CE = 5 V, I C = 10 A
7
14
Collector to emitter saturation voltage
V CE(sat)
I C = 10 A, I B = 2.5 A
3
V
Base to emitter saturation voltage
V BE(sat)
I C = 10 A, I B = 2.5 A
1.5
V
Transition frequency
f T
V CE = 10 V, I C = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t stg
I C = 10 A, Resistance loaded
2.7
µs
Fall time
t f
I B1 = 2.5 A, I B2 = −5.0 A
0.2
µs
1
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