2SC5128.pdf
(
59 KB
)
Pobierz
2SC5128_E
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6
±
0.2
n
Features
f
3.2
±
0.1
9.9
±
0.3
2.9
±
0.2
l
High-speed switching
l
High collector to base voltage V
CBO
l
Wide area of safe operation (ASO)
l
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
1.2
±
0.15
2.6
±
0.1
1.45
±
0.15
0.7
±
0.1
n
Absolute Maximum Ratings
(T
C
=25˚C)
Parameter
Collector to base voltage
0.75
±
0.1
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
Ratings
800
800
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
2.54
±
0.2
5.08
±
0.4
Collector to emitter voltage
7
°
1
23
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
T
C
=25°C
Ta=25°C
P
C
W
T
j
T
stg
˚C
˚C
n
Electrical Characteristics
(T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 2A
I
C
= 2A, I
B
= 0.4A
I
C
= 2A, I
B
= 0.4A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
min
typ
max
100
100
Unit
m
A
m
A
V
500
15
8
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
1.0
1.5
V
V
MHz
m
20
1.0
3.0
0.3
s
m
I
C
= 2A, I
B1
= 0.4A, I
B2
= – 0.8A,
V
CC
= 200V
s
m
s
1
Power Transistors
2SC5128
P
C
—Ta
I
C
—V
CE
V
CE(sat)
—I
C
60
6
100
T
C
=25˚C
I
C
/I
B
=5
(1) T
C
=Ta
(2) With a 100
´
100
´
2mm
I
B
=800mA
30
50
Al heat sink
(3) With a 50
´
50
´
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
5
700mA
600mA
10
(1)
500mA
40
4
25˚C
400mA
3
300mA
200mA
30
3
1
20
2
100mA
0.3
0.1
T
C
=–25˚C
(2)
50mA
10
(4)
1
0.03
(3)
100˚C
0
0
0.01
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
0.01
0.03
0.1
0.3
1
3
10
Ambient temperature Ta
(
˚C
)
Collector to emitter voltage V
CE
(
V
)
Collector current I
C
(
A
)
V
BE(sat)
—I
C
h
FE
—I
C
f
T
—I
C
100
1000
100
I
C
/I
B
=5
V
CE
=5V
V
CE
=10V
f=1MHz
T
C
=25˚C
30
300
30
10
100
10
T
C
=100˚C
3
30
25˚C
3
T
C
=–25˚C
–25˚C
25˚C
1
10
1
100˚C
0.3
3
0.3
0.1
1
0.1
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
—V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
1000
100
30
I
E
=0
f=1MHz
T
C
=25˚C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25˚C
30
10
I
CP
I
C
300
t=0.5ms
10
3
1ms
100
10ms
3
1
t
stg
DC
30
1
0.3
t
on
0.3
0.1
10
t
f
0.1
0.03
3
0.03
0.01
Non repetitive pulse
T
C
=25˚C
1
0.01
0.003
1
3
10
30
100
0
1
2
3
4
5
6
7
8
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(
V
)
Collector current I
C
(
A
)
Collector to emitter voltage V
CE
(
V
)
2
Power Transistors
2SC5128
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
8
L
coil
=50
µ
H
L coil
I
C
/I
B
=5
(I
B1
=–I
B2
)
T
C
²
100˚C
7
6
I
B1
T.U.T
I
C
5
V
in
–I
B2
V
CC
4
3
2
t
W
V
clamp
1
0
0
100
200
300
400
500
600
700
800
Collector to emitter voltage V
CE
(
V
)
R
th(t)
—t
10000
1000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
´
0.2A (2W) and without heat sink
(2) P
T
=10V
´
1.0A (10W) and with a 100
´
100
´
2mm Al heat sink
100
(1)
10
(2)
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
Plik z chomika:
aos.artur2
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