BUZ21.PDF

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BUZ 21
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V DS
I D
R DS(on )
Package
Ordering Code
BUZ 21
100 V
21 A
0.085
W
TO-220 AB
C67078-S1308-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T C = 25 °C
I D
A
21
Pulsed drain current
T C = 25 °C
I Dpuls
84
Avalanche current,limited by T jmax
I AR
21
Avalanche energy,periodic limited by T jmax
E AR
11
mJ
Avalanche energy, single pulse
I D = 21 A, V DD = 25 V, R GS = 25
E AS
W
L = 340 µH, T j = 25 °C
100
Gate source voltage
V GS
±
20
V
Power dissipation
T C = 25 °C
P tot
W
75
Operating temperature
T j
-55 ... + 150 °C
Storage temperature
T stg
-55 ... + 150
Thermal resistance, chip case
R thJC
£
1.67
K/W
Thermal resistance, chip to ambient
R thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Semiconductor Group
1
01/97
337921258.012.png 337921258.013.png 337921258.014.png
BUZ 21
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, I D = 0.25 mA, T j = 25 °C
V (BR)DSS
V
100
-
-
Gate threshold voltage
V GS = V DS, I D = 1 mA
V GS(th)
2.1
3
4
Zero gate voltage drain current
V DS = 100 V, V GS = 0 V, T j = 25 °C
V DS = 100 V, V GS = 0 V, T j = 125 °C
I DSS
µA
-
0.1
1
-
10
100
Gate-source leakage current
V GS = 20 V, V DS = 0 V
I GSS
nA
-
10
100
Drain-Source on-resistance
V GS = 10 V, I D = 13 A
R DS(on)
W
-
0.065
0.085
Semiconductor Group
2
01/97
337921258.015.png 337921258.001.png
BUZ 21
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V DS ³
g fs
S
2 * I D * R DS(on)max, I D = 13 A
8
11
-
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
C iss
pF
-
1000
1300
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
C oss
-
300
530
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
C rss
-
150
240
Turn-on delay time
V DD = 30 V, V GS = 10 V, I D = 3 A
R GS = 50
t d(on)
ns
W
-
25
40
Rise time
V DD = 30 V, V GS = 10 V, I D = 3 A
R GS = 50 W
t r
-
50
75
Turn-off delay time
V DD = 30 V, V GS = 10 V, I D = 3 A
R GS = 50
t d(off)
W
-
160
210
Fall time
V DD = 30 V, V GS = 10 V, I D = 3 A
R GS = 50 W
t f
-
80
110
Semiconductor Group
3
01/97
337921258.002.png 337921258.003.png
BUZ 21
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T C = 25 °C
I S
A
-
-
21
Inverse diode direct current,pulsed
T C = 25 °C
I SM
-
-
84
Inverse diode forward voltage
V GS = 0 V, I F = 42 A
V SD
V
-
1.3
1.7
Reverse recovery time
V R = 30 V, I F = l S, di F /dt = 100 A/µs
t rr
ns
-
150
-
Reverse recovery charge
V R = 30 V, I F = l S, di F /dt = 100 A/µs
Q rr
µC
-
0.48
-
Semiconductor Group
4
01/97
337921258.004.png 337921258.005.png
BUZ 21
Power dissipation
P tot = ¦ (T C )
Drain current
I D = ¦ (T C )
parameter: V GS ³
10 V
80
22
A
W
P tot
I D
18
60
16
50
14
12
40
10
30
8
20
6
4
10
2
0
0
0
20
40
60
80 100 120 °C 160
T C
0
20
40
60
80 100 120 °C 160
T C
(V DS )
parameter: D = 0.01, T C = 25°C
¦
Transient thermal impedance
Z th JC =
¦
10
3
10
1
A
K/W
I D
10
2
t p = 22.0µs
Z thJC
10
0
100 µs
1 ms
10
1
10
-1
D = 0.50
10 ms
0.20
0.10
10
0
10
-2
0.05
0.02
DC
0.01
single pulse
10
-1
10
-3
10 0
10 1
10 2
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
V
s
V DS
t p
Semiconductor Group
5
01/97
Safe operating area
I D =
(t p )
parameter: D = t p / T
337921258.006.png 337921258.007.png 337921258.008.png 337921258.009.png 337921258.010.png 337921258.011.png

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