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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1000
V
V CBO
Collector-Base voltage (open emitter)
-
1000
V
V CEO
Collector-emitter voltage (open base)
-
450
V
I C
Collector current (DC)
-
5
A
I CM
Collector current peak value
-
10
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
32
W
V CEsat
Collector-emitter saturation voltage
-
1.5
V
I Csat
Collector saturation current
3.5
-
A
t f
Fall time
I Csat =2.5A,I B1 =0.5A,I B2 =0.8A
145
160
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
c
1
base
2
collector
b
3
emitter
case isolated
e
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V CESM
Collector to emitter voltage
V BE = 0 V
-
1000
V
V CEO
Collector to emitter voltage (open base)
-
450
V
V CBO
Collector to base voltage (open emitter)
-
1000
V
I C
Collector current (DC)
-
5
A
I CM
Collector current peak value
-
10
A
I B
Base current (DC)
-
2
A
I BM
Base current peak value
-
4
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
32
W
T stg
Storage temperature
-65
150
˚C
T j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
R th j-hs
Junction to heatsink
with heatsink compound
-
3.95
K/W
R th j-a
Junction to ambient
in free air
55
-
K/W
September 1998
1
Rev 1.000
22889010.013.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
Collector cut-off current 1
V BE = 0 V; V CE = V CESMmax
-
-
1.0
mA
I CES
V BE = 0 V; V CE = V CESMmax ;
-
-
2.0
mA
T j = 125 ˚C
I EBO
Emitter cut-off current
V EB = 9 V; I C = 0 A
-
-
10
mA
V CEOsust
Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;
450
-
-
V
L = 25 mH
V CEsat
Collector-emitter saturation voltages I C = 3.0 A; I B = 0.6 A
-
0.25
1.5
V
V BEsat
Base-emitter saturation voltage
I C = 2.5 A; I B = 0.33 A
-
-
1.3
V
h FE
DC current gain
I C = 5 mA; V CE = 5 V
10
22
35
h FE
I C = 500 mA; V CE = 5 V
14
25
35
h FEsat
I C = 2.5 A; V CE = 5 V
10
13.5
17
h FEsat
I C = 3.5 A; V CE = 5 V
8
10
12
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (resistive load)
I Csat = 2.5 A; I B1 = -I B2 = 0.5 A;
R L = 75 ohms; V BB2 = 4 V;
t on
Turn-on time
0.5
0.7
m
s
t s
Turn-off storage time
3.3
4
m
s
t f
Turn-off fall time
0.33
0.45
m
s
Switching times (inductive load)
I Csat = 2.5 A; I B1 = 0.5 A; L B = 1
m
H;
-V BB = 5 V
t s
Turn-off storage time
1.4
1.6
m
s
t f
Turn-off fall time
145
160
ns
Switching times (inductive load)
I Csat = 2.5 A; I B1 = 0.5 A; L B = 1
m
H;
-V BB = 5 V; T j = 100 ˚C
t s
Turn-off storage time
1.7
1.9
m
s
t f
Turn-off fall time
160
200
ns
1 Measured with half sine-wave voltage (curve tracer).
September 1998
2
Rev 1.000
22889010.014.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
ICsat
90 %
90 %
+ 50v
100-200R
IC
10 %
Horizontal
ts
ton
tf
toff
Oscilloscope
IB1
IB
Vertical
10 %
300R
1R
tr 30ns
6V
30-60 Hz
-IB2
Fig.1. Test circuit for V CEOsust .
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250
LC
200
IB1
LB
100
T.U.T.
-VBB
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V CEOsust .
Fig.5. Test circuit inductive load.
V CC = 300 V; -V BE = 5 V; L C = 200 uH; L B = 1 uH
VCC
ICsat
90 %
IC
R
L
VIM
R
10 %
0
T.U.T.
ts
tf
t
tp
toff
IB
IB1
T
t
-IB2
= t p / T = 0.01.
R B and R L calculated from I Con and I Bon requirements.
m
s;
d
Fig.6. Switching times waveforms with inductive load.
September 1998
3
Rev 1.000
B
Fig.3. Test circuit resistive load. V IM = -6 to +8 V
V CC = 250 V; t p = 20
22889010.015.png 22889010.016.png 22889010.001.png 22889010.002.png 22889010.003.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
ICon
VCEsat/V
90 %
2.0
IC
1.6
IC=1A
2A
3A 4A
1.2
10 %
ts
tf
t
0.8
toff
IB
IBon
0.4
t
0.0
0.01
0.10
1.00
10.00
-IBoff
IB/A
Fig.7. Switching times waveforms with inductive load.
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V CEsat = f(IB); T j =25˚C.
120
110
100
90
80
70
60
50
40
30
20
10
0
%
Normalised Derating
VBEsat/V
with heatsink compound
1.4
1.2
1.0
P tot
0.8
0.6
0.4
0.2
0
20
40
60
80
100 120 140
0.0
0.1
1.0
10.0
Ths / C
IC/A
Fig.8. Normalised power dissipation.
PD% = 100
×
PD/PD 25˚C = f (T hs )
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V BEsat = f(IC); at IC/IB =4.
h FE
VCEsat/V
100
5V
0.5
0.4
10
0.3
0.2
Tj = 25 C
1V
0.1
1
0.0
0.01
0.1
1
10
0
1
10
IC / A
IC/A
Fig.9. Typical DC current gain. h FE = f(I C )
parameter V CE
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V CEsat = f(IC); at IC/IB =4.
September 1998
4
Rev 1.000
22889010.004.png 22889010.005.png 22889010.006.png 22889010.007.png 22889010.008.png 22889010.009.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
10
Zth / (K/W)
BU1706AX
VCC
1
0.5
0.2
0.1
0.05
0.02
LC
0.1
P
t p
t p
VCL
D =
D
T
IBon
LB
0.01
D=0
T
t
T.U.T.
-VBB
0.001
1u
10u
100u
1m
10m
100m
1
10
100
t / s
Fig.13. Transient thermal impedance.
Z th j-hs = f(t); parameter D = t p /T
Fig.15. Test circuit RBSOA. V cl
V BB = -5V; L B = 1
m
H; L c = 200
£
1000V; V cc = 150V;
m
H
IC/V
11
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600
800
1,000
1,200
VCE CLAMP/V
Fig.14. Reverse bias safe operating area. T j
£
T j max
September 1998
5
Rev 1.000
22889010.010.png 22889010.011.png 22889010.012.png

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