BU508AW_2.pdf

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection
circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1500
V
V CEO
Collector-emitter voltage (open base)
-
700
V
I C
Collector current (DC)
-
8
A
I CM
Collector current peak value
-
15
A
P tot
Total power dissipation
T mb
£
25 ˚C
-
125
W
V CEsat
Collector-emitter saturation voltage
I C = 4.5 A; I B = 1.6 A
-
1.0
V
I Csat
Collector saturation current
f = 16 kHz
4.5
-
A
t f
Fall time
I Csat = 4.5 A; f = 16kHz
0.7
-
m
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
c
1
base
2
collector
b
3
emitter
tab collector
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1500
V
V CEO
Collector-emitter voltage (open base)
-
700
V
I C
Collector current (DC)
-
8
A
I CM
Collector current peak value
-
15
A
I B
Base current (DC)
-
4
A
I BM
Base current peak value
-
6
A
P tot
Total power dissipation
T mb
£
25 ˚C
-
125
W
T stg
Storage temperature
-65
150
˚C
T j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
R th j-mb
Junction to mounting base
-
-
1.0
K/W
R th j-a
Junction to ambient
in free air
45
-
K/W
July 1998
1
Rev 1.200
s
22890051.010.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
STATIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
Collector cut-off current 1
V BE = 0 V; V CE = V CESMmax
-
-
1.0
mA
I CES
V BE = 0 V; V CE = V CESMmax ;
-
-
2.0
mA
T j = 125 ˚C
I EBO
Emitter cut-off current
V EB = 6.0 V; I C = 0 A
-
-
10
mA
V CEOsus
Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;
700
-
-
V
L = 25 mH
V CEsat
Collector-emitter saturation voltages I C = 4.5 A; I B = 1.6 A
-
-
1.0
V
V BEsat
Base-emitter saturation voltage
I C = 4.5 A; I B = 2.0 A
-
-
1.1
V
h FE
DC current gain
I C = 100 mA; V CE = 5 V
6
13
30
-
DYNAMIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
f T
Transition frequency at f = 5 MHz
I C = 0.1 A;V CE = 5 V
7
-
MHz
C C
Collector capacitance at f = 1MHz
V CB = 10 V
125
-
pF
Switching times (16 kHz line
I Csat = 4.5 A;L c = 1 mH;C fb = 4 nF
m
H; -V BB = -4 V;
t s
Turn-off storage time
6.5
-
m
s
t f
Turn-off fall time
0.7
-
m
s
IC / mA
+ 50v
100-200R
250
Horizontal
200
Oscilloscope
Vertical
100
100R
1R
0
6V
VCE / V
min
VCEOsust
30-60 Hz
Fig.1. Test circuit for V CEOsust .
Fig.2. Oscilloscope display for V CEOsust .
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
deflection circuit)
I B(end) = 1.4 A; L B = 6
22890051.011.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
TRANSISTOR
DIODE
ICsat
100
h FE
BU508AD
IC
t
IB
IBend
t
10
20us
26us
64us
VCE
1
0.1
1
10
IC/A
t
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. h FE = f (I C )
parameter V CE
ICsat
90 %
1
VCESAT / V
BU508AD
0.9
IC
0.8
0.7
10 %
0.6
tf
t
0.5
ts
0.4
IB
IBend
0.3
t
0.2
0.1
- IBM
0
0.1
1
IC / A
10
Fig.4. Switching times definitions.
Fig.7. Typical collector-emitter saturation voltage.
V CE sat = f (I C ); parameter I C /I B
+ 150 v nominal
adjust for ICsat
1.4
V BESAT / V
BU508AD
1.2
1mH
IC = 6A
1
IBend
LB
D.U.T.
BY228
IC = 4.5A
IC = 3A
12nF
0.8
-VBB
0.6
0
1
2
3
IB / A
4
Fig.5. Switching times test circuit.
Fig.8. Typical base-emitter saturation voltage.
V BE sat = f (I B ); parameter I C
July 1998
3
Rev 1.200
22890051.012.png 22890051.013.png 22890051.001.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
VCESAT/V
BU508AD
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
10
with heatsink compound
1
IC = 6A
IC = 4.5A
IC = 3A
0.1
0
20
40
60
80
100 120 140
0.1
1
10
IB/A
Ths / C
Fig.9. Typical collector-emitter saturation voltage.
V CE sat = f (I B ); parameter I C
Fig.11. Normalised power dissipation.
PD% = 100
P D /P D 25˚C = f (T hs )
10
Zth K/W
bu508aw
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
D
t p
D =
t p
0
T
t
0.001
1.0E-07
1.0E-5
1.0E-3
1.0E-1
1.0E+1
t / s
Fig.10. Transient thermal impedance.
Z th j-hs = f(t); parameter D = t p /T
Fig.12. Forward bias safe operating area. T mb < 25˚C
(1) P tot max line.
(2) Second-breakdown limit (independent of
temperature).
I Region of permissible DC operation.
II Permissible extension for repetitive operation.
July 1998
4
Rev 1.200
×
P
T
22890051.002.png 22890051.003.png 22890051.004.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
MECHANICAL DATA
Dimensions in mm
5.3 m ax
16 max
1.8
Net Mass: 5 g
o
3.5
max
5.3
7.3
3.5
21
max
15.5
max
seating
plane
2. 5
max
15.5
min
1
2
3
2.2 max
1.1
0.9 max
3.2 max
0.4
M
5.45
5.45
Fig.13. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
4.0
22890051.005.png 22890051.006.png 22890051.007.png 22890051.008.png 22890051.009.png

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