BU506DF_1.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
BU506F; BU506DF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
22890016.048.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a SOT186
package. The BU506DF has an
integrated efficiency diode.
2
2
APPLICATIONS
1
1
·
Horizontal deflection circuits of
colour television receivers
MBB008
3
3
MBB077
·
Line-operated switch-mode
applications.
a. BU506F.
b. BU506DF.
PINNING
123
PIN (1)
DESCRIPTION
Front view
MBC668
1
base
2
collector
Fig.1 Simplified outline (SOT186) and symbols.
3
emitter
Note
1. All pins electrically isolated from mounting base.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX. UNIT
V CESM
collector-emitter peak voltage
V BE =0
-
1500
V
V CEO
collector-emitter voltage
open base
-
700
V
V CEsat
collector-emitter saturation voltage I C = 3 A; I B = 1.33 A; see Figs 7 and 8
-
1
V
V F
diode forward voltage (BU506DF) I F = 3 A
1.5
2.2
V
I Csat
collector saturation current
-
3
A
I C
collector current (DC)
see Figs 2 and 3
-
5
A
I CM
collector current (peak value)
see Figs 2 and 3
-
8
A
P tot
total power dissipation
T h £
25
°
C; see Fig.4
-
20
W
t f
fall time
inductive load; see Fig.11
0.7
-
m s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-h
thermal resistance from junction to external heatsink note 1
6.35
K/W
note 2
3.85
K/W
R th j-a
thermal resistance from junction to ambient
55
K/W
Notes
1. Mounted without heatsink compound and 30 ± 5 N force on centre of package.
2. Mounted with heatsink compound and 30
±
5 N force on centre of package.
1997 Aug 14
1
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Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CESM
collector-emitter peak voltage
V BE =0
-
1500
V
V CEO
collector-emitter voltage
open base
-
700
V
I Csat
collector saturation current
V CE =5V
-
3
A
I C
collector current (DC)
see Figs 2 and 3
-
5
A
I CM
collector current (peak value)
see Figs 2 and 3
-
8
A
I B
base current (DC)
-
3
A
I BM
base current (peak value)
-
5
A
P tot
total power dissipation
T h £
25
°
C; see Fig.4
-
20
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V isolM
isolation voltage from all terminals to external heatsink (peak value)
-
1500
V
C isol
isolation capacitance from collector to external heatsink
12
-
pF
CHARACTERISTICS
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V CEOsust collector-emitter sustaining
voltage
I C = 100 mA; I B = 0; L = 25 mH;
see Figs 5 and 6
700
-
-
V
V CEsat
collector-emitter saturation
voltage
I C = 3 A; I B = 1.33 A;
see Figs 7 and 8
-
-
1
V
V BEsat
base-emitter saturation voltage
I C = 3 A; I B = 1.33 A; see Fig.9
-
-
1.3
V
V F
diode forward voltage (BU506DF) I F =3A
-
1.5
2.2
V
I CES
collector-emitter cut-off current
V CE =V CESmax ; V BE =0
-
-
0.5
mA
V CE =V CESmax ; V BE =0;
T j = 125 ° C
-
-
1
mA
I EBO
emitter-base cut-off current
V EB =6V; I C =0
-
-
10
mA
h FE
DC current gain
V CE =5V; I C = 3 A; see Fig.10
2.25
-
-
V CE =5V; I C = 100 mA;
see Fig.10
6
13
30
Switching times in horizontal deflection circuit (see Fig.11)
t s
storage time
H;
I B(end) = 1 A; dI B /dt = - 0.33 A/ m s
m
-
6.5
-
m
s
t f
fall time
I Csat =3A;L B =12
m
H;
-
0.7
-
m
s
I B(end) = 1 A; dI B /dt =
-
0.33 A/
m
s
1997 Aug 14
2
°
I Csat =3A;L B =12
22890016.013.png 22890016.014.png 22890016.015.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
10 2
MGB933
handbook, full pagewidth
I C
(A)
10
I CM max
I C max
II
1
I
10 - 1
10 - 2
10 - 3
10 - 4
10 2
10 3
10 4
1
10
V CE (V)
Mounted without heatsink compound and 30
±
5 N force on centre of package.
T mb =25 ° C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR (no heatsink compound).
1997 Aug 14
3
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Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
10 2
MGB934
handbook, full pagewidth
I C
(A)
10
I CM max
I C max
II
1
I
10 - 1
10 - 2
10 - 3
10 - 4
10 2
10 3
10 4
1
10
V CE (V)
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.3 Forward bias SOAR (with heatsink compound).
1997 Aug 14
4
Mounted with heatsink compound and 30 ± 5 N force on centre of package.
T mb =25
°
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