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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in
horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs
£
25 ˚C
-
34
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.6 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
4.5
-
A
t
f
Fall time
I
Csat
= 4.5 A; f = 16kHz
0.7
-
m
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
c
case
1
base
2
collector
b
3
emitter
case isolated
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
P
tot
Total power dissipation
T
hs
£
25 ˚C
-
34
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
September 1997
1
Rev 1.100
s
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H.
£
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CES
Collector cut-off current
1
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 6.0 V; I
C
= 0 A
-
-
10
mA
V
CEOsus
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.6 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 2 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
6
13
30
-
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
f
T
Transition frequency at f = 5 MHz
I
C
= 0.1 A;V
CE
= 5 V
7
-
MHz
C
C
Collector capacitance at f = 1MHz
V
CB
= 10 V
125
-
pF
Switching times (16 kHz line
I
Csat
= 4.5 A;L
c
1 mH;C
fb
= 4 nF
deflection circuit)
I
B(end)
= 1.4 A; L
B
= 6
m
H; -V
BB
= -4 V;
-I
BM
= 2.25 A
t
s
Turn-off storage time
6.5
-
m
s
t
f
Turn-off fall time
0.7
-
m
s
1
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
+ 50v
ICsat
90 %
100-200R
IC
Horizontal
10 %
tf
t
Oscilloscope
ts
IBend
IB
Vertical
100R
1R
t
6V
30-60 Hz
- IBM
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
250
1mH
200
100
IBend
LB
D.U.T.
12nF
BY228
0
VCE / V
min
VCEOsust
-VBB
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times test circuit.
TRANSISTOR
DIODE
ICsat
100
h
FE
BU508AD
IC
t
IB
IBend
t
10
20us
26us
64us
VCE
1
0.1
1
10
t
IC/A
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
1
VCESAT / V
BU508AD
VCESAT/V
BU508AD
10
0.9
0.8
0.7
0.6
0.5
1
0.4
IC = 6A
0.3
0.2
IC = 4.5A
0.1
IC = 3A
0
0.1
1
10
0.1
0.1
1
10
IC / A
IB/A
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
V
BESAT / V
BU508AD
PD%
Normalised Power Derating
1.4
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1.2
IC = 6A
1
IC = 4.5A
IC = 3A
0.8
0
20
40
60
80
100 120 140
0.6
0
1
2
3
IB / A
4
Ths / C
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Normalised power dissipation.
PD% = 100
P
D
/P
D 25˚C
= f (T
hs
)
September 1997
4
Rev 1.100
×
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
100
IC / A
100
IC / A
= 0.01
= 0.01
ICM max
tp =
ICM max
tp =
10
IC max
10
IC max
II
10 us
II
10 us
Ptot max
Ptot max
1
100 us
1
100 us
I
1 ms
I
1 ms
0.1
0.1
10 ms
10 ms
DC
DC
0.01
0.01
1
10
100
1000
1
10
100
1000
VCE / V
VCE / V
Fig.11. Forward bias safe operating area. T
hs
= 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
Fig.12. Forward bias safe operating area. T
hs
= 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
NB: Mounted without heatsink compound and
30
±
September 1997
5
Rev 1.100
5 newton force on the centre of
the envelope.
5 newton force on the centre of
the envelope.
Plik z chomika:
aos.artur2
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