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11068855 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BST60; BST61; BST62
PNP Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
11068855.013.png 11068855.014.png 11068855.015.png
Philips Semiconductors
Product specification
PNP Darlington transistors
BST60; BST61; BST62
FEATURES
PINNING
·
High current (max. 0.5 A)
PIN
DESCRIPTION
·
Low voltage (max. 80 V)
1
emitter
·
Integrated diode and resistor.
2
collector
3
base
APPLICATIONS
·
Industrial switching applications such as:
– print hammer
– solenoid
– relay and lamp driving.
handbook, halfpag e
2
DESCRIPTION
3
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BST50, BST51 and BST52.
1
2
3
1
MARKING
Bottom view
MAM326
TYPE NUMBER
MARKING CODE
BST60
BS1
BST61
BS2
Fig.1 Simplified outline (SOT89) and symbol.
BST62
BS3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BST60
-
-
- 60
V
BST61
-
-
-
80
V
BST62
-
-
-
90
V
V CES
collector-emitter voltage V BE =0
BST60
-
-
- 45
V
BST61
-
-
-
60
V
BST62
-
-
-
80
V
I C
collector current (DC)
-
-
-
0.5
A
P tot
total power dissipation
T amb £ 25 ° C
-
-
1.35
W
h FE
DC current gain
I C =
-
500 mA; V CE =
-
10 V
2000
-
-
f T
transition frequency
I C =
-
500 mA; V CE =
-
5 V; f = 100 MHz
-
200
-
MHz
1997 Apr 16
2
11068855.016.png 11068855.001.png 11068855.002.png
Philips Semiconductors
Product specification
PNP Darlington transistors
BST60; BST61; BST62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BST60
-
-
60
V
BST61
-
- 80
V
BST62
-
-
90
V
V CES
collector-emitter voltage
V BE =0
BST60
-
-
45
V
BST61
-
- 60
V
BST62
-
-
80
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
-
0.5
A
I CM
peak collector current
-
- 1.5
A
I B
base current (DC)
-
-
100
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
1.35
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm 2 .
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
92
K/W
R th j-s
thermal resistance from junction to soldering point
11
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm 2 .
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
1997 Apr 16
3
11068855.003.png
Philips Semiconductors
Product specification
PNP Darlington transistors
BST60; BST61; BST62
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
collector cut-off current
BST60
V BE = 0; V CE = - 45 V
-
-
- 50
nA
BST61
V BE = 0; V CE =
-
60 V
-
-
-
50
nA
BST62
V BE = 0; V CE =
-
80 V
-
-
-
50
nA
I EBO
emitter cut-off current
I C = 0; V EB =
-
4V
-
-
-
50
nA
h FE
DC current gain
V CE = - 10 V; note 1; see Fig.2
I C =
-
150 mA
1000
I C =
-
500 mA
2000
-
-
V CEsat
collector-emitter saturation
voltage
I C =
-
500 mA; I B =
-
0.5 mA
-
-
-
1.3 V
I C = - 500 mA; I B = - 0.5 mA; T j = 150 ° C
-
-
- 1.3 V
V BEsat
base-emitter saturation voltage I C =
-
500 mA; I B =
-
0.5 mA
-
-
-
1.9 V
f T
transition frequency
I C =
-
500 mA; V CE =
-
5 V; f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels); see Fig.3
t on
turn-on time
I Con =
-
500 mA; I Bon =
-
0.5 mA;
-
500
-
ns
I Boff = 0.5 mA
t off
turn-off time
-
700
-
ns
Note
1. Pulse test: t p £ 300 m s; d£ 0.02.
1997 Apr 16
4
11068855.004.png
Philips Semiconductors
Product specification
PNP Darlington transistors
BST60; BST61; BST62
MGD839
6000
handbook, full pagewidth
h FE
5000
4000
3000
2000
1000
0
- 10 - 1
- 1
- 10
- 10 2
- 10 3
I C (mA)
V CE =
-
10 V.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
V BB
V CC
R B
R C
oscilloscope
(probe)
450
V o
(probe)
450
oscillo scope
W
W
V i
R2
DUT
R1
MGD624
V i = - 10 V; T = 200 m s; t p =6 m s; t r =t f £ 3 ns.
R1 = 56 W ; R2 = 10 k W ; R B =10k W ; R C =18 W .
V BB = 1.8 V; V CC =
-
Fig.3 Test circuit for switching times.
1997 Apr 16
5
10.7 V.
Oscilloscope: input impedance Z i =50 W .
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