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BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
l
Designed for Complementary Use with the
BD540 Series
TO-220 PACKAGE
(TOP VIEW)
l
45 W at 25°C Case Temperature
l
5 A Continuous Collector Current
B
1
l
Up to 120 V V
CEO
rating
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage
BD539
BD539A
BD539B
BD539C
BD539D
V
CBO
40
60
80
100
120
V
Collector-emitter voltage (see Note 1)
BD539
BD539A
BD539B
BD539C
BD539D
V
CEO
40
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
P
tot
45
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
P
tot
2
W
Operating free air temperature range
T
A
-65 to +150
°C
Operating junction temperature range
T
j
-65 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 4)
I
B
= 0
BD539
BD539A
BD539B
BD539C
BD539D
40
60
80
100
120
V
I
CES
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 120 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD539
BD539A
BD539B
BD539C
BD539D
0.2
0.2
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 90 V
I
B
= 0
I
B
= 0
I
B
= 0
BD539/539A
BD539B/539C
BD539D
0.3
0.3
0.3
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
I
C
= 0.5 A
I
C
= 1 A
I
C
= 3 A
(see Notes 4 and 5)
40
30
12
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 125 mA
I
B
= 375 mA
I
B
= 1 A
I
C
= 1 A
I
C
= 3 A
I
C
= 5 A
(see Notes 4 and 5)
0.25
0.8
1.5
V
V
BE(on)
Base-emitter
voltage
V
CE
= 4 V
I
C
= 3 A
(see Notes 4 and 5)
1.25
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
£
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
MIN
TYP MAX
UNIT
R
q
JC
Junction to case thermal resistance
2.78
°C/W
R
q
JA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP MAX
UNIT
t
on
Turn-on time
I
C
= 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30
W
I
B(off)
= -0.1 A
t
p
= 20 µs, dc
£
2%
0.5
µs
t
off
Turn-off time
2
µs
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT INFORMATION
2
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AH
TCS631AB
1000
10
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
T
C
= 25°C
T
C
= 80°C
1·0
100
0·1
10
0·01
I
C
= 100 mA
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
0·01
0·1
1·0
10
0·1
1·0
10
100
1000
I
C
- Collector Current - A
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
V
CE
= 4 V
T
C
= 25°C
0·9
0·8
0·7
0·6
0·01
0·1
1·0
10
I
C
- Collector Current - A
Figure 3.
PRODUCT INFORMATION
3
0·5
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AI
10
1·0
0·1
0·01
BD539
BD539A
BD539B
BD539C
BD539D
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AC
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
10,4
1,32
3,71
10,0
2,95
1,23
see Note B
2,54
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
1,70
12,7
0,97
0,61
1,07
1 2 3
2,74
0,64
2,34
0,41
5,28
2,90
4,88
2,40
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT INFORMATION
5
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