BD539.PDF

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

l Designed for Complementary Use with the

BD540 Series

TO-220 PACKAGE

(TOP VIEW)

l 45 W at 25°C Case Temperature

l 5 A Continuous Collector Current

l Up to 120 V V CEO rating

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage

BD539

BD539A

BD539B

BD539C

BD539D

V CBO

100

120

Collector-emitter voltage (see Note 1)

BD539

BD539A

BD539B

BD539C

BD539D

V CEO

100

120

Emitter-base voltage

V EBO

Continuous collector current

I C

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

P tot

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

P tot

Operating free air temperature range

T A

-65 to +150

°C

Operating junction temperature range

T j

-65 to +150

°C

Storage temperature range

T stg

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

T L

260

°C

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

V (BR)CEO

Collector-emitter

breakdown voltage

I C = 30 mA

(see Note 4)

I B = 0

BD539

BD539A

BD539B

BD539C

BD539D

100

120

I CES

Collector-emitter

cut-off current

V CE = 40 V

V CE = 60 V

V CE = 80 V

V CE = 100 V

V CE = 120 V

V BE = 0

BD539

BD539A

BD539B

BD539C

BD539D

0.2

I CEO

Collector cut-off

current

V CE = 30 V

V CE = 60 V

V CE = 90 V

I B = 0

BD539/539A

BD539B/539C

BD539D

0.3

I EBO

Emitter cut-off

current

V EB = 5 V

I C = 0

h FE

Forward current

transfer ratio

V CE = 4 V

I C = 0.5 A

I C = 1 A

I C = 3 A

(see Notes 4 and 5)

V CE(sat)

Collector-emitter

saturation voltage

I B = 125 mA

I B = 375 mA

I B = 1 A

I C = 1 A

I C = 3 A

I C = 5 A

(see Notes 4 and 5)

0.25

0.8

1.5

V BE(on)

Base-emitter

voltage

V CE = 4 V

I C = 3 A

(see Notes 4 and 5)

1.25

h fe

Small signal forward

current transfer ratio

V CE = 10 V

I C = 0.5 A

f = 1 kHz

| h fe |

Small signal forward

current transfer ratio

V CE = 10 V

I C = 0.5 A

f = 1 MHz

NOTES: 4. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle £ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

MIN

TYP MAX

UNIT

R q JC

Junction to case thermal resistance

2.78

°C/W

R q JA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP MAX

UNIT

t on

Turn-on time

I C = 1 A

V BE(off) = -4.3 V

I B(on) = 0.1 A

R L = 30 W

I B(off) = -0.1 A

t p = 20 µs, dc £ 2%

0.5

µs

t off

Turn-off time

µs

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT INFORMATION

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE

BASE CURRENT

TCS631AH

TCS631AB

1000

V CE = 4 V

t p = 300 µs, duty cycle < 2%

T C = 25°C

T C = 80°C

1·0

100

0·1

0·01

I C = 100 mA

I C = 300 mA

I C = 1 A

I C = 3 A

0·01

0·1

1·0

0·1

1·0

100

1000

I C - Collector Current - A

I B - Base Current - mA

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE

COLLECTOR CURRENT

TCS631AC

1·0

V CE = 4 V

T C = 25°C

0·9

0·8

0·7

0·6

0·01

0·1

1·0

I C - Collector Current - A

Figure 3.

PRODUCT INFORMATION

0·5

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS631AI

1·0

0·1

0·01

BD539

BD539A

BD539B

BD539C

BD539D

1·0

100

1000

V CE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TIS631AC

100

125

150

T C - Case Temperature - °C

Figure 5.

PRODUCT INFORMATION

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

TO220

4,70

4,20

3,96

10,4

1,32

3,71

10,0

2,95

1,23

see Note B

2,54

6,6

6,0

15,90

14,55

see Note C

6,1

3,5

14,1

1,70

12,7

0,97

0,61

1,07

1 2 3

2,74

0,64

2,34

0,41

5,28

2,90

4,88

2,40

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab.

MDXXBE

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

PRODUCT INFORMATION

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