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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639
NPN medium power transistors
Product specication
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 12
Philips Semiconductors
Product specication
NPN medium power transistors
BC635; BC637; BC639
FEATURES
PINNING
·
High current (max. 1 A)
PIN
DESCRIPTION
·
Low voltage (max. 80 V).
1
base
2
collector
APPLICATIONS
3
emitter
·
Driver stages of audio/video amplifiers.
DESCRIPTION
handbook, halfpag
1
2
2
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC636, BC638 and BC640.
3
1
MAM259
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC635
-
45
V
BC637
-
60
V
BC639
-
100
V
V
CEO
collector-emitter voltage
open base
BC635
-
45
V
BC637
-
60
V
BC639
-
80
V
I
CM
peak collector current
-
1.5
A
P
tot
total power dissipation
T
amb
£
25
°
C
-
0.83
W
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 2 V
40
250
f
T
transition frequency
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz 100
-
MHz
1997 Mar 12
2
Philips Semiconductors
Product specication
NPN medium power transistors
BC635; BC637; BC639
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC635
-
45
V
BC637
-
60
V
BC639
-
100
V
V
CEO
collector-emitter voltage
open base
BC635
-
45
V
BC637
-
60
V
BC639
-
80
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
1.5
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C
-
0.83
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Mar 12
3
Philips Semiconductors
Product specication
NPN medium power transistors
BC635; BC637; BC639
CHARACTERISTICS
T
j
=25
°
C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=30V
-
100
nA
I
E
= 0; V
CB
=30V; T
j
= 150
°
C
-
10
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=5V
-
100
nA
h
FE
DC current gain
V
CE
= 2 V; see Fig.2
I
C
= 5 mA
40
-
I
C
= 150 mA
40
250
I
C
= 500 mA
25
-
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 2 V; see Fig.2
BC635-10; BC637-10; BC639-10
63
160
BC635-16; BC637-16; BC639-16
100
250
V
CEsat
collector-emitter saturation voltage
I
C
= 500 mA; I
B
=50mA
-
500
mV
V
BE
base-emitter voltage
I
C
= 500 mA; V
CE
=2V
-
1
V
f
T
transition frequency
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
100
-
MHz
h
FE1
h
FE2
DC current gain ratio of the
complementary pairs
ï
I
C
ï
= 150 mA;
ï
V
CE
ï
=2V
-
1.6
MBH729
160
handbook, full pagewidth
h
FE
V
CE
= 2 V
120
80
40
0
10
-
1
10
2
10
3
1
10
I
C
(mA)
Fig.2 DC current gain; typIcal values.
1997 Mar 12
4
-----------
Philips Semiconductors
Product specication
NPN medium power transistors
BC635; BC637; BC639
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
D
e
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
1
0.66
0.56
c
D
d
E
e
e
1
L
L
1
(1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1997 Mar 12
5
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