BC109.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BC107; BC108; BC109
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
1997 Sep 03
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
emitter
2
base
APPLICATIONS
3
collector, connected to the case
·
General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
1
3
2
NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
2
3
MAM264
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC107
-
50
V
BC108; BC109
-
30
V
V CEO
collector-emitter voltage
open base
BC107
-
45
V
BC108; BC109
-
20
V
I CM
peak collector current
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
300
mW
h FE
DC current gain
I C = 2 mA; V CE =5V
BC107
110
450
BC108
110
800
BC109
200
800
f T
transition frequency
I C = 10 mA; V CE = 5 V; f = 100 MHz
100
-
MHz
1997 Sep 03
2
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC107
-
50
V
BC108; BC109
-
30
V
V CEO
collector-emitter voltage
open base
BC107
-
45
V
BC108; BC109
-
20
V
V EBO
emitter-base voltage
open collector
BC107
-
6
V
BC108; BC109
-
5
V
I C
collector current (DC)
-
100
mA
I CM
peak collector current
-
200
mA
I BM
peak base current
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
300
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
175
° C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
0.5
K/mW
R th j-c
thermal resistance from junction to case
0.2
K/mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 03
3
11067646.021.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =20V
-
-
15
nA
I E = 0; V CB = 20 V; T j = 150 ° C
-
-
15
m A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
-
50
nA
h FE
DC current gain
I C =10
m
A; V CE =5V
BC107A; BC108A
-
90
-
BC107B; BC108B; BC109B
40
150
-
BC108C; BC109C
100
270
-
h FE
DC current gain
I C = 2 mA; V CE =5V
BC107A; BC108A
110
180
220
BC107B; BC108B; BC109B
200
290
450
BC108C; BC109C
420
520
800
V CEsat
collector-emitter saturation voltage I C = 10 mA; I B = 0.5 mA
-
90
250
mV
I C = 100 mA; I B =5mA
-
200
600
mV
V BEsat
base-emitter saturation voltage
I C = 10 mA; I B = 0.5 mA; note 1
-
700
-
mV
I C = 100 mA; I B = 5 mA; note 1
-
900
-
mV
V BE
base-emitter voltage
I C = 2 mA; V CE = 5 V; note 2
550
620
700
mV
I C = 10 mA; V CE = 5 V; note 2
-
-
770
mV
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
2.5
6
pF
C e
emitter capacitance
I C =i c = 0; V EB = 0.5 V; f = 1 MHz
-
9
-
pF
f T
transition frequency
I C = 10 mA; V CB = 5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
I C = 200
m
A; V CE =5V; R S =2k
W
;
f = 30 Hz to 15.7 kHz
BC109B; BC109C
-
-
4
dB
F
noise figure
I C = 200
m
A; V CE =5V; R S =2k
W
;
f = 1 kHz; B = 200 Hz
BC107A; BC108A
BC107B; BC108B; BC108C
-
-
10
dB
BC109B; BC109C
-
-
4
dB
Notes
1. V BEsat decreases by about 1.7 mV/K with increasing temperature.
2. V BE decreases by about 2 mV/K with increasing temperature.
1997 Sep 03
4
11067646.022.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
j
a
seating plane
B
w
M
A
M B M
1
b
k
D 1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D 1
j
k
L
w
a
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
°
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT18/13
B11/C7 type 3
TO-18
97-04-18
1997 Sep 03
5
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