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TDA2005
20W BRIDGE AMPLIFIER FOR CAR RADIO
High output power :
P
O
= 10 + 10 W@R
L
=2
W
,
d = 10% ; P
O
= 20W@R
L
=4
W
,d=1%.
High reliability
of the chip and package with addi-
tional complete safety during operation thanks to
protection against :
.
OUTPUT DC AND AC SHORT CIRCUIT TO
GROUND
.
LOAD DUMP VOLTAGE SURGE
MULTIWATT11
.
VERY INDUCTIVE LOADS
Flexibility in use :
bridge or stereo booster ampli-
fiers with or without boostrap and with programma-
ble gain and bandwidth.
Space and cost saving :
very low number of
external components, very simple mounting sys-
tem with no electrical isolation between the pack-
age and the heatsink (one screw only).
In addition, the circuit offers
loudspeaker protec-
tion
during short circuit for one wire to ground.
ORDERING NUMBERS :
TDA2005M (Bridge Appl.)
TDA2005S (Stereo Appl.)
DESCRIPTION
The TDA2005 is class B dual audio power amplifier
in MULTIWATT
)
package specifically designed for
car radio application :
power booster amplifiers
are easily designed using this device that provides
a high current capability (up to 3.5 A) and that can
drive very low impedance loads (down to 1.6
W
in
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
s
Operating Supply Voltage
18
V
V
s
DC Supply Voltage
28
V
V
s
Peak Supply Voltage (for 50 ms)
40
V
I
o
(*)
Output Peak Current (non repetitive t = 0.1 ms)
4.5
A
I
o
(*)
Output Peak Current (repetitive f
.
10 Hz)
3.5
A
P
tot
Power Dissipation at T
case
=60
°
C
30
W
T
stg
,T
j
Storage and Junction Temperature
– 40 to 150
°
C
(*) The max. output current is internally limited.
PIN CONNECTION
11
BOOTSTRAP(1)
10
OUTPUT(1)
9
+V
S
8
OUTPUT(2)
7
BOOTSTRAP(2)
6
GND
5
INPUT+(2)
4
INPUT-(2)
3
SVRR
2
INPUT-(1)
1
INPUT+(1)
TAB CONNECTED TO PIN 6
D95AU318
October 1998
1/20
.
OVERRATING CHIP TEMPERATURE
.
FORTUITOUS OPEN GROUND
TDA2005
SCHEMATIC DIAGRAM
THERMAL DATA
Symbol
Parameter
Value
Unit
R
th j-case
Thermal Resistance Junction-case
Max.
3
°
C/W
2/20
TDA2005
BRIDGE AMPLIFIER APPLICATION (TDA2005M)
Figure 1 :
Test and Application Circuit (Bridge amplifier)
Figure 2 :
P.C. Board and Components Layout of Figure 1 (1:1 scale)
3/20
TDA2005
ELECTRICAL CHARACTERISTICS
(refer to the
Bridge
applicationcircuit, T
amb
=25
o
C, G
V
= 50dB,
R
th (heatsink
)=4
o
C/W, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V
s
Supply Voltage
8
18
V
V
os
Output Offset Voltage (1)
(between pin 8 and pin 10)
V
s
= 14.4V
V
s
= 13.2V
150
150
mV
mV
I
d
Total Quiescent Drain Current
V
s
= 14.4V
R
L
=4
W
75
70
150
160
mA
mA
V
s
= 13.2V
R
L
= 3.2
W
P
o
Output Power
d = 10%
f = 1 Hz
W
V
s
= 14.4V
W
R
L
= 3.2
18
20
17
20
22
19
W
V
s
= 13.2V
R
L
= 3.2
W
d
Distortion
f = 1kHz
V
s
= 14.4V
R
L
=4
W
P
o
= 50mW to 15W
V
s
= 13.2V
1
%
R
L
= 3.2
W
1
%
P
o
= 50mW to 13W
V
i
Input Sensitivity
f = 1kHz
P
o
=2W
R
L
=4
W
9
8
mV
mV
P
o
=2W
R
L
= 3.2
W
R
i
Input Resistance
f = 1kHz
70
k
W
f
L
Low Frequency Roll Off (– 3dB)
R
L
= 3.2
W
40
Hz
f
H
High Frequency Roll Off (– 3dB) R
L
= 3.2
W
20
kHz
G
v
Closed Loop Voltage Gain
f = 1kHz
50
dB
e
N
Total Input Noise Voltage
R
g
= 10k
W
(2)
3
10
m
V
SVR
Supply Voltage Rejection
F
f
ripple
= 100Hz, V
ripple
= 0.5V
W
,C
4
=10
m
45
55
dB
h
Efficiency
V
s
= 14.4V, f = 1 kHz
P
o
= 20W
R
L
=4
W
60
60
%
%
P
o
= 22W
R
L
= 3.2
W
V
s
= 13.2V, f = 1 kHz
P
o
= 19W
R
L
= 3.2
W
58
%
T
j
Thermal Shut-down Junction
Temperature
W
f = 1kHz, P
tot
= 13W
145
°
C
V
OSH
Output Voltage with one Side of
the Speaker shorted to ground
V
s
= 14.4V
R
L
=4
W
Notes :
1. For TDA2005M only
2. Bandwith Filter : 22Hz to 22kHz.
V
s
= 13.2V
R
L
= 3.2
W
2
V
4/20
R
L
=4
R
g
= 10k
V
s
= 14.4V, R
L
=4
TDA2005
Figure 3 :
Output Offset Voltage versus
Supply Voltage
Figure 4 :
Distortion versus Output Power
(bridge amplifier)
Figure 5 :
Distortion versus Output Power
(bridge amplifier)
BRIDGE AMPLIFIER DESIGN
The following consideraions can be useful when designing a bridge amplifier.
Parameter
Single Ended
Bridge
V
omax
Peak Output Voltage (before clipping)
1
2
(V
s
–2V
CE sat
)
V
s
–2V
CE sat
I
o max
Peak Output Current (before clippling)
1
2
V
S
-
2V
CE
sat
R
L
V
S
-
2V
CE sat
R
L
4
(
V
S
-
2V
CE sat
)
2
V
S
-
2V
CE sat
)
2
P
omax
RMS Output Power (before clipping)
2R
L
2R
L
Where : V
CE sat
= output transistors saturation voltage
V
S
= allowable supply voltage
R
L
= load impedance
5/20
1
(
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