BTA204_SERIES_D_E_F_2.pdf

(44 KB) Pobierz
22887968 UNPDF
Philips Semiconductors
Product specification
guaranteed commutation
BTA204 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in motor control circuits or with
BTA204- 500D 600D
-
other highly inductive loads. These
BTA204- 500E 600E 800E
devices balance the requirements of
BTA204- 500F 600F 800F
commutation performance and gate
V DRM
Repetitive peak
500
600
800
V
sensitivity. The "sensitive gate" E
off-state voltages
series and "logic level" D series are
I T(RMS)
RMS on-state current
4
4
4
A
intended for interfacing with low power
I TSM
Non-repetitive peak on-state 25
25
25
A
drivers, including micro controllers.
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V DRM
Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave;
-
4
A
T mb
£
107 ˚C
I TSM
Non-repetitive peak
full sine wave;
on-state current
T j = 25 ˚C prior to
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I 2 t
I 2 t for fusing
t = 10 ms
-
3.1
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 6 A; I G = 0.2 A;
100
A/
m
s
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
m
s.
December 1998
1
Rev 1.000
Three quadrant triacs
22887968.006.png
Philips Semiconductors
Product specification
guaranteed commutation
BTA204 series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance
full cycle
-
-
3.0
K/W
junction to mounting base half cycle
-
-
3.7
K/W
R th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA204-
...D
...E
...F
I GT
Gate trigger current 2
V D = 12 V; I T = 0.1 A
T2+ G+
-
-
5
10
25
mA
T2+ G-
-
-
5
10
25
mA
T2- G-
-
-
5
10
25
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
-
6
12
20
mA
T2+ G-
-
-
9
18
30
mA
T2- G-
-
-
6
12
20
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
-
6
12
20
mA
V T
On-state voltage
I T = 5 A
-
1.4
1.7
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A;
0.25
0.4
-
V
T j = 125 ˚C
I D
Off-state leakage current V D = V DRM(max) ;
-
0.1
0.5
mA
T j = 125 ˚C
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA204-
...D
...E
...F
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ;
20
30
50
-
-
V/
m
s
off-state voltage
T j = 125 ˚C; exponential
waveform; gate open
circuit
dI com /dt
Critical rate of change of V DM = 400 V; T j = 125 ˚C; 1.0
2.0
2.5
-
-
A/ms
commutating current
I T(RMS) = 4 A;
dV com /dt = 20V/
m
s; gate
open circuit
dI com /dt
Critical rate of change of V DM = 400 V; T j = 125 ˚C; 5.0
-
-
-
-
A/ms
commutating current
I T(RMS) = 4 A;
dV com /dt = 0.1V/
m
s; gate
open circuit
t gt
Gate controlled turn-on
I TM = 12 A; V D = V DRM(max) ;
-
-
-
2 -
m
s
time
I G = 0.1 A; dI G /dt = 5 A/
m
s
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
Three quadrant triacs
22887968.007.png 22887968.008.png 22887968.009.png
Philips Semiconductors
Product specification
guaranteed commutation
BTA204 series D, E and F
Ptot / W
BT136
Tmb(max) / C
5
IT(RMS) / A
BT136
8
101
7
104
107 C
4
= 180
120
90
60
30
6
107
1
5
110
3
4
113
3
116
2
2
119
1
1
122
0
0
1
2
3
4
125
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
1000
ITSM / A
BT136
12
IT(RMS) / A
BT136
I
T
I TSM
10
T
time
Tj initial = 25 C max
8
100
6
dI /dt limit
T
4
T2- G+ quadrant
2
10
0
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb
£
107˚C.
30
ITSM / A
BT136
VGT(Tj)
VGT(25 C)
BT136
1.6
I
T
I TSM
25
1.4
T
time
20
Tj initial = 25 C max
1.2
15
1
10
0.8
5
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
December 1998
3
Rev 1.000
Three quadrant triacs
5
0
22887968.001.png
Philips Semiconductors
Product specification
guaranteed commutation
BTA204 series D, E and F
IGT(Tj)
IGT(25 C)
12
IT / A
Tj = 125 C
Tj = 25 C
BT136
BTA204
3
T2+ G+
T2+ G-
T2- G-
10
typ
max
2.5
Vo = 1.27 V
Rs = 0.091 ohms
8
2
1.5
6
1
4
0.5
2
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
BT136
TRIAC
3
unidirectional
2.5
bidirectional
1
2
1.5
1
0.1
P
t p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
3
IH(Tj)
IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
December 1998
4
Rev 1.000
Three quadrant triacs
0
D
22887968.002.png
Philips Semiconductors
Product specification
guaranteed commutation
BTA204 series D, E and F
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x )
123
0,9 max (3x)
0,6
2,54 2,54
2,4
Fig.12. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
5
Rev 1.000
Three quadrant triacs
22887968.003.png 22887968.004.png 22887968.005.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin