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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2702GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
PACKAGE DRAWING (Unit: mm)
PA2702GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
8
5
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
FEATURES
Low on-state resistance
R
DS(on)1
= 9.5 m
MAX. (V
GS
= 10 V, I
D
= 7.0 A)
1
4
6.0 ±0.3
4.4
R
DS(on)2
= 15.1 m
MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
5.37 MAX.
0.8
Low C
iss
: C
iss
= 900 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
0.5 ±0.2
1.27
0.78 MAX.
0.10
ORDERING INFORMA
T
ION
0.40
+0.10
–0.05
0.12 M
PART NUMBER
PACKAGE
PA2702GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
EQUIVALENT CIRCUIT
Drain Current (DC)
I
D(DC)
13
A
Dr
a
in
Drain Current (pulse)
Note1
I
D(pulse)
52
A
Total Power Dissipation (T
A
= 25°C)
Note2
P
T
2.0
W
Body
Diode
Channel Temperature
T
ch
150
°C
Gate
Storage Temperature
T
stg
–55 to +150
°C
Single Avalanche Current
Note3
I
AS
13
A
Gate
Protection
Diode
Single Avalanche Energy
Note3
E
AS
16.9
mJ
Source
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
10
s, Duty Cycle
, L = 100
H, V
GS
= 20
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15724EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
2002
Notes 1.
PW
PA2702GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
DS
= 10 V, I
D
= 7.0 A
7
13
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 7.0 A
7.6
9.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 7.0 A
11.3 15.1
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 7.0 A
12.9 17.2
m
Input Capacitance
C
iss
V
DS
= 10 V
900
pF
Output Capacitance
C
oss
V
GS
= 0 V
380
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 7.0 A
9
ns
Rise Time
t
r
V
GS
= 10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
35
ns
Fall Time
t
f
8
ns
Total Gate Charge
Q
G
V
DD
=
15
V
9
nC
Gate to Source Charge
Q
GS
V
GS
=
5
V
3
nC
Gate to Drain Charge
Q
GD
I
D
= 13 A
4
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 13 A, V
GS
= 0 V
0.82
1.2
V
Reverse Recovery Time
t
rr
I
F
= 13 A, V
GS
= 0 V
28
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
22
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.
T.
D.U.
T.
V
GS
L
R
G
= 25
R
L
90%
V
GS
Wave Form
V
GS
10%
R
G
0
PG.
PG.
50
V
DD
V
DD
V
GS
=
20
0 V
V
DS
90%
90%
V
GS
0
V
DS
BV
DSS
V
DS
Wave Form
0
10% 10%
I
AS
V
DS
I
D
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 1 s
Duty Cycle
t
on
t
off
Starting T
ch
1%
TEST CIRCUIT 3 GATE CHARGE
D.U.
T.
I
G
=
2 mA
R
L
PG.
50
V
DD
2
Data Sheet G15724EJ2V0DS
PA2702GR
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted o
n
ceramic
substrate of
1200 mm
100
2.4
2
2.2 mm
80
2.0
1.6
60
1.2
40
0.8
20
0.4
0
20
40
60
80
100
120
140
160
0
0
20 40 60
80
100
120
140
160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse) =
52 A
I
D(DC) =
13 A
10
1
0.1
0.01
T
A
= 25˚C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R
th(ch-A)
= 62.5˚C/W
10
1
Mounted on ceramic substrate of
1200 mm
2
2.2 mm
Single Pulse
Channel to Ambient
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15724EJ2V0DS
3
PA2702GR
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
80
70
10
60
50
V
GS
= 10 V
4.5 V
T
A
=
25˚C
25˚C
75˚C
150˚C
1
40
4.0 V
30
0.1
20
10
0.01
V
DS
= 10 V
0
Pulsed
1
2
3
4
5
0
0.1
0.2 0.3 0.4
0.5 0.6
0.7
0.8 0.9 1.0
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN C
U
RRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
40
V
DS
= 10 V
Pulsed
Pulsed
30
10
T
A
= 150˚C
75˚C
25˚C
20
1
25˚C
10
I
D
= 7.0 A
0.1
0.01
0.1
1
10
100
0
0
2
4
6
8
10
12
14 16
18
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
20
3
Pulsed
V
DS
= 10 V
I
D
= 1 mA
15
V
GS
= 4.0 V
2
10
4.5 V
10 V
1
5
0
0.1
1
10
100
0
50
25
0
25
50
75
100
125
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet G15724EJ2V0DS
PA2702GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
25
Pulsed
100
Pulsed
V
GS
= 0 V
20
10
V
GS
= 4 V
15
4.5 V
1
10
10 V
5
0.1
0
50
25 0
25
50
75
100
125
150
175
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
100
t
d(off)
1000
C
iss
t
f
C
oss
10
t
d(on)
100
C
rss
t
r
10
V
GS
= 0 V
f = 1 MHz
1
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
0.1
1
10
100
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
di/dt = 100 A/ s
V
GS
= 0 V
40
8
35
7
30
V
DD
= 24 V
15 V
6 V
6
100
25
V
GS
5
20
4
10
15
3
10
2
5
V
DS
1
1
0.1
0
I
D
= 13 A
0
1
10
100
0
2
4
6
8
10
12
14
16
18
20
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet G15724EJ2V0DS
5
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