APM4800.pdf

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APM4800
N-Channel Enhancement Mode MOSFET
Features
Pin Description
SO-8
30V/8A , R DS(ON) =15m
(typ.) @ V GS =10V
R DS(ON) =22m
(typ.) @ V GS =4.5V
S
1
8
D
Super High Dense Cell Design for Extremely
Low R DS(ON)
S
2
7
D
S
3
6
D
Reliable and Rugged
G
4
5
D
SO-8 Package
Top View
Applications
D
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
APM4800
Package Code
K : S O -8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM4800 K :
APM4800
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (T A = 25 °
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V DSS
Drain-Source Voltage
30
V
V GSS
Gate-Source Voltage
±20
I D *
Maximum Drain Current – Continuous
8
A
I DM
Maximum Drain Current – Pulsed
32
* Surface Mounted on FR4 Board, t
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
1
www.anpec.com.tw
••
••
••
Copyright
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APM4800
Absolute Maximum Ratings Cont. (T A = 25 °
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
P D
Maximum Power Dissipation
T A =25
C
2.5
W
T A =100
C
1.0
T J
Maximum Junction Temperature
150
C
T STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance – Junction to Ambient
50
C/W
Electrical Characteristics (T A = 25 °
C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4800
Unit
Min.
Typ. Max.
Static
BV DSS
Drain-Source Breakdown
Voltage
V GS =0V , I DS =250
A
30
V
I DSS
Zero Gate Voltage Drain
Current
V DS =24V , V GS =0V
1
A
V DS =24V, V GS =0V, T j = 55
C
5
V GS(th)
Gate Threshold Voltage
V DS =V GS , I DS =250
A
1
3
V
I GSS
Gate Leakage Current
V GS =
20V , V DS =0V
100
nA
R DS(ON) a
Drain-Source On-state
Resistance
V GS =10V , I DS =4A
15
18
m
V GS =4.5V , I DS =2A
22
30
V SD a
Diode Forward Voltage
I SD =2A , V GS =0V
0.6
1.3
V
Dynamic b
Q g
Total Gate Charge
V DS =15V , I DS = 2A
V GS =4.5V ,
15
20
Q gs
Gate-Source Charge
5.8
nC
Q gd
Gate-Drain Charge
3.8
t d(ON)
Turn-on Delay Time
11
18
T r
Turn-on Rise Time
V DD =15V , I DS =1A ,
V GEN =10V , R G =0.2
17
26
ns
t d(OFF)
Turn-off Delay Time
37
54
T f
Turn-off Fall Time
20
30
C iss
Input Capacitance
V GS =0V
V DS =15V
Frequency=1.0MHz
1200
C oss
Output Capacitance
220
pF
C rss
Reverse Transfer Capacitance
100
%
b : Guaranteed by design, not subject to production testing
300
s, duty cycle
2
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
2
www.anpec.com.tw
Notes
a : Pulse test ; pulse width
Copyright
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APM4800
Typical Characteristics
Output Characteristics
Transfer Characteristics
30
40
V GS =5,6,7,8,9,10V
25
30
20
V GS =4V
15
20
T J =25
C
10
V GS =3.5V
10
T J =125
C
T J =-55
C
5
V GS =3V
0
0
0
2
4
6
8
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V DS -Drain-to-Source Voltage (V)
V GS -Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.2
0.040
I DS =250
A
0.035
1.0
0.030
V GS =4.5V
0.025
0.8
0.020
V GS =10V
0.015
0.6
0.010
0.005
0.4
0.000
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
T j -Junction Temperature (
C)
I DS -Drain Current (A)
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
3
www.anpec.com.tw
Copyright
323061329.042.png
APM4800
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
0.045
1.6
I DS =4A
V GS =10V
I DS =4A
0.040
0.035
1.4
0.030
1.2
0.025
0.020
1.0
0.015
0.010
0.8
0.005
0.000
0.6
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100 125 150
Gate Voltage (V)
T j -Junction Temperature (
C)
Gate Charge
Capacitance Characteristics
10
2000
V DS =15V
I DS =10A
Ciss
8
1000
500
6
Coss
4
Crss
100
2
Frequency=1MHz
0
0
5
10
15
20
25
30
0.1
1
10
30
Q G -Total Gate Charge (nC)
V DS -Drain-to-Source Voltage (V)
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
4
www.anpec.com.tw
Copyright
323061329.043.png
APM4800
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
Single Pulse Power
100
60
50
10
40
30
1
T J =125
C
T J =-55
C
20
T J =25
C
10
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10 -2
10 -1
10 0
10 1
10 2
V SD -Source to Drain Voltage
Time (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R thJA =50
C/W
SINGLE PULSE
0.01
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
Square Wave Pulse Duration (sec)
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
5
www.anpec.com.tw
3. T JM -T A =P DM Z thJA
4. Surface Mounted
Copyright
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