FDS6670A.pdf

July 1998

FDS6670A

Single N-Channel, Logic Level, PowerTrench TM MOSFET

General Description

Features

This N-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

the on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

13 A, 30 V. R DS(ON) = 0.008 W @ V GS = 10 V

R DS(ON) = 0.010 W @ V GS = 4.5 V.

Fast switching speed.

Low gate charge (35 nC tyical).

High performance trench technology for

extremely low R DS(ON) .

High power and current handling capability.

SOT-23

SuperSOT TM -6

SuperSOT TM -8

SO-8

SOT-223

SOIC-16

Absolute Maximum Ratings T A = 25 o C unless other wise noted

Symbol

Parameter

FDS6670A

Units

V DSS

Drain-Source Voltage

V GSS

Gate-Source Voltage

±20

I D

Drain Current - Continuous (Note 1a)

- Pulsed

P D

Power Dissipation for Single Operation (Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

T J ,T STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R q JA

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

R q JC

Thermal Resistance, Junction-to-Case (Note 1)

°C/W

FDS6670A Rev.D1

Electrical Characteristics ( T A = 25 O C unless otherwise noted )

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV DSS

Drain-Source Breakdown Voltage

V GS = 0 V, I D = 250 µA

D BV DSS / D T J

Breakdown Voltage Temp. Coefficient

I D = 250 µA, Referenced to 25 o C

mV / o C

I DSS

Zero Gate Voltage Drain Current

V DS = 24 V, V GS = 0 V

µA

T J = 55°C

µA

I GSSF

Gate - Body Leakage, Forward

V GS = 20 V, V DS = 0 V

100

I GSSR

Gate - Body Leakage, Reverse

V GS = -20 V, V DS = 0 V

-100

ON CHARACTERISTICS (Note 2)

V GS(th)

Gate Threshold Voltage

V DS = V GS , I D = 250 µA

1.6

D V GS(th) / D T J

Gate Threshold Voltage Temp. Coefficient

I D = 250 µA, Referenced to 25 o C

-4.5

mV / o C

R DS(ON)

Static Drain-Source On-Resistance

V GS = 10 V, I D = 13 A

0.0063 0.008

T J =125°C

0.009 0.014

V GS = 4.5 V, I D = 10.5 A

0.0082 0.01

I D(ON)

On-State Drain Current

V GS = 10 V, V DS = 5 V

g FS

Forward Transconductance

V DS = 15 V, I D = 13 A

DYNAMIC CHARACTERISTICS

C iss

Input Capacitance

V DS = 15 V, V GS = 0 V,

f = 1.0 MHz

3200

C oss

Output Capacitance

820

C rss

Reverse Transfer Capacitance

400

SWITCHING CHARACTERISTICS (Note 2)

t D(on)

Turn - On Delay Time

V DS = 10 V, I D = 1 A

t r

Turn - On Rise Time

V GS = 10 V , R GEN = 6 W

t D(off)

Turn - Off Delay Time

105

t f

Turn - Off Fall Time

Q g

Total Gate Charge

V DS = 15 V, I D = 13 A,

Q gs

Gate-Source Charge

V GS = 5 V

Q gd

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I S

Maximum Continuous Drain-Source Diode Forward Current

2.1

V SD

Drain-Source Diode Forward Voltage

V GS = 0 V, I S = 2.1 A (Note 2)

0.71

1.2

Notes:

1. R q JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R q JC is

guaranteed by design while R q CA is determined by the user's board design.

a. 50 O C/W on a 1 in 2 pad

of 2oz copper.

b. 105 O C/W on a 0.04 in 2

pad of 2oz copper.

c. 125 O C/W on a 0.006 in 2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6670A Rev.D1

Typical Electrical Characteristics

2.5

V =10V

5.5V

4.5V

3.5V

V = 3.0V

3.0V

3.5 V

1.5

4.0 V

4.5 V

6.0 V

10V

2.5V

0.5

1.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics .

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage .

1.6

0.03

I = 13A

I = 6.5A

1.4

V = 10V

0.025

0.02

1.2

0.015

0.01

T = 125°C

0.8

0.005

25°C

0.6

-50

-25

100

125

150

V , GATE TO SOURCE VOLTAGE (V)

T , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation with

Temperature .

Figure 4 . On Resistance Variation with

Gate-to-Source Voltage.

V = 5.0V

V = 0V

T = 125°C

0.1

25°C

T =125°C

0.01

-55°C

25°C

0.001

-55°C

0.0001

1.5

2.5

3.5

0.2

0.4

0.6

0.8

1.2

V , GATE TO SOURCE VOLTAGE (V)

V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5 . Transfer Characteristics.

Figure 6 . Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS6670A Rev.D1

Typical Electrical Thermal Characteristics

7000

I = 13A

V = 5V

10V

4000

iss

15V

2000

1000

C oss

500

C rss

200

f = 1 MHz

V = 0 V

100

0.1

0.2

0.5

Q , GATE CHARGE (nC)

V , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R =125°C/W

T = 25°C

q JA

0.5

V =10V

SINGLE PULSE

R = 125°C/W

T = 25°C

0.1

0.05

q JA

0.01

0.05 0.1

0.5

30 50

0.001

0.01

0.1

100 300

V , DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area .

Figure 10. Single Pulse Maximum Power

Dissipation.

0.5

D = 0.5

0.2

R (t) = r(t) * R

R = 125°C/W

q JA

0.1

0.05

0.02

0.01

0.05

0.02

P(pk)

t 1

0.01

t 2

0.005

Single Pulse

T - T = P * R (t)

q JA

0.002

Duty Cycle, D = t /t

1 2

0.001

0.0001

0.001

0.01

0.1

100

300

t , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS6670A Rev.D1

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging

Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC

ELECTRO MAGN ETI C, MAG NETIC O R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB ER

PEEL STREN GTH MIN ___ __ ____ __ ___g ms

MAX _____________ gms

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is

made from a dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2,500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 500 units per 7" or

177cm diameter reel. This and some other options are

further described in the Packaging Information table.

These full reels are individually barcode labeled and

placed inside a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside a barcode labeled shipping box which

comes in different sizes depending on the number of parts

shipped.

Antistatic Cover Tape

ESD Label

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

Customized

Label

F 852

NDS

9 9 5 9

SOIC (8lds) Packaging Information

Standard

(no flow code)

Pin 1

Packaging Option

L86Z

F011

D84Z

TNR

SOIC-8 Unit Orientation

Packaging type

TNR

Rail/Tube

TNR

Qty per Reel/Tube/Bag

2,500

4,000

500

Reel Size

13" Dia

7" Dia

Box Dimension (mm)

343x64x343 530x130x83 343x64x343

184x187x47

1,000

Max qty per Box

5,000

30,000

8,000

Weight per unit (gm)

0.0774

Weight per Reel (kg)

0.6060

0.9696

0.1182

Note/Comments

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sample

F63TNLabel

F63TN Label

LOT: CBVK741B019

QTY: 2500

FSID: FDS9953A

SPEC:

ESD Label

D/C1: D9842 QTY1:

QTY2:

SPEC REV:

N/F: F (F63TNR)3

SOIC(8lds) Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape

640mm minimum or

80 empty pockets

Components

Leader Tape

1680mm minimum or

210 empty pockets

July 1999, Rev. B

D/C2:

CPN:

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