FDS7088N3.pdf

February 2004

FDS7088N3

30V N-Channel PowerTrench  MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R DS(ON) in a small package.

• 21 A, 30 V

R DS(ON) = 4 m Ω @ V GS = 10 V

R DS(ON) = 5 m Ω @ V GS = 4.5 V

• High performance trench technology for extremely

low R DS(ON)

Applications

• High power and current handling capability

• Synchronous rectifier

• DC/DC converter

• Fast switching

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings T A =25 o C unless otherwise noted

Symbol

Parameter

Ratings

Units

V DSS

Drain-Source Voltage

V GSS

Gate-Source Voltage

± 20

I D

Drain Current – Continuous

(Note 1a)

– Pulsed

P D

Power Dissipation for Single Operation

(Note 1a)

3.0

(Note 1b)

1.5

T J , T STG

Operating and Storage Junction Temperature Range

–55 to +150

° C

Thermal Characteristics

R θ JA

Thermal Resistance, Junction-to-Ambient (Note 1a)

° C/W

R θ JC

Thermal Resistance, Junction-to-Case

(Note 1)

0.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS7088N3

13’’

12mm

2500 units

 2004 Fairchild Semiconductor Corporation

FDS7088N3 Rev D1 (W)

Electric al Characteristics

T A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Chara cteristics

BV DSS

Drain–Source Breakdown Voltage V GS = 0 V,

I D = 250 µ A

∆ BV DSS

∆ T J

Breakdown Voltage Temperature

Coefficient

I D = 250 µ A, Referenced to 25 ° C

mV/ ° C

I DSS

Zero Gate Voltage Drain Current V DS = 24 V, V GS = 0 V

10 µ A

I GSS

Gate–Body Leakage

V GS = ± 20 V, V DS = 0 V

± 100

On Chara cteristics (Note 2)

V GS(th)

Gate Threshold Voltage

V DS = V GS ,

I D = 250 µ A

1.9

∆ V GS(th)

∆ T J

Gate Threshold Voltage

Temperature Coefficient

I D = 250 µ A, Referenced to 25 ° C

–6

mV/ ° C

R DS(on)

Static Drain–Source

On–Resistance

V GS = 10 V, I D = 21 A

V GS = 4.5 V, I D = 19 A

V GS = 10 V, I D = 21 A, T J = 125 ° C

3.0

3.7

4.4

5.5

m Ω

g FS

Forward Transconductance

V DS = 10 V, I D = 21 A

112

Dynamic Characteristics

C iss

Input Capacitance

V DS = 15 V, V GS = 0 V,

f = 1.0 MHz

3845

C oss

Output Capacitance

930

C rss

Reverse Transfer Capacitance

368

R G

Gate Resistance

V GS = 15 mV, f = 1.0 MHz

1.4

Ω

Switching Characteristics (Note 2)

t d(on)

Turn–On Delay Time

V DD = 15 V, I D = 1 A,

V GS = 10 V, R GEN = 6 Ω

t r

Turn–On Rise Time

t d(off)

Turn–Off Delay Time

t f

Turn–Off Fall Time

Q g

Total Gate Charge

V DS = 15 V, I D = 21 A,

V GS = 5.0 V

Q gs

Gate–Source Charge

Q gd

Gate–Drain Charge

Drain–Source Diode Characteristics and Maximum Ratings

I S

Maximum Continuous Drain–Source Diode Forward Current

2.5

V SD

Drain–Source Diode Forward

Voltage

V GS = 0 V, I S = 2.5 A (Note 2)

0.7

1.2

t rr

Diode Reverse Recovery Time

I F = 21 A,

d iF /d t = 100 A/µs

Q rr

Diode Reverse Recovery Charge

Notes:

1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.

40°C/W when

mounted on a 1in 2 pad

of 2 oz copper

85°C/W when mounted on

a minimum pad of 2 oz

copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%

FDS7088N3 Rev D1 (W)

Typical Characteristics

2.2

V GS = 10V

4.0V

V GS = 3.5V

3.5V

4.5V

1.8

1.6

4.0V

1.4

4.5V

5.0V

1.2

6.0V

3.0V

10V

0.8

0.5

1.5

V DS , DRAIN-SOURCE VOLTAGE (V)

I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

0.01

I D = 21A

V GS = 10V

I D = 10.5A

1.4

0.008

1.2

0.006

T A = 125 o C

0.004

T A = 25 o C

0.8

0.002

0.6

-50

-25

100

125

150

T J , JUNCTION TEMPERATURE ( o C)

V GS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V GS = 0V

V DS = 5V

T A = 125 o C

25 o C

0.1

T A =125 o C

-55 o C

25 o C

0.01

-55 o C

0.001

0.0001

2.5

3.5

0.2

0.4

0.6

0.8

1.2

V GS , GATE TO SOURCE VOLTAGE (V)

V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7088N3 Rev D1 (W)

Typical Characteristics

5000

f = 1MHz

V GS = 0 V

I D = 21A

V DS = 10V

15V

4000

C ISS

20V

3000

2000

C OSS

1000

C RSS

Q g , GATE CHARGE (nC)

V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

100

R DS(ON) LIMIT

100µs

SINGLE PULSE

R θ JA = 85°C/W

T A = 25°C

1ms

100ms

10ms

10s

V GS = 10V

SINGLE PULSE

R θ JA = 85 o C/W

T A = 25 o C

0.1

0.01

0.1

100

0.01

0.1

100

1000

V DS , DRAIN-SOURCE VOLTAGE (V)

t 1 , TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

1.00

D = 0.5

0.2

R θ JA (t) = r(t) * R θ JA

R θ JA = 85 °C/W

0.10

0.1

0.05

P(pk)

0.02

t 1

0.01

t 2

SINGLE PULSE

T J - T A = P * R θ JA (t)

Duty Cycle, D = t 1 / t 2

0.00

0.0001

0.001

0.01

0.1

100

1000

t 1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDS7088N3 Rev D1 (W)

Dimensional Outline and Pad Layout

FDS7088N3 Rev D1 (W)

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