FDS9412.pdf

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April 2000
FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
7.9 A, 30 V. R DS(ON) = 22 m Ω
@ V GS = 10 V
R DS(ON) = 36 m Ω
@ V GS = 4.5 V
Very low gate charge.
These devices are particularly suited for low voltage
applications such as notebook computer DC-DC
converter where fast switching, low conduction loss and
high efficiency are needed.
High switching speed
High performance trench technology for extremely
low R DS(ON)
High power and current handling capability in a
widely used surface mount package.
D
D
5
4
D
D
6
3
G
7
2
S
S
8
1
SO-8
S
Absolute Maximum Ratings T A =25 o C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DSS
Drain-Source Voltage
30
V
V GSS
Gate-Source Voltage
20
V
I D
Drain Current – Continuous
(Note 1a)
7.9
A
– Pulsed
24
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1.0
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
50
C/W
R θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS9412
FDS9412
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS9412 Rev D(W)
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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage V GS = 0 V, I D = 250
A
30
V
BV DSS
Breakdown Voltage Temperature
Coefficient
I D = 250
A, Referenced to 25
C
28
mV/
C
T J
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V, V GS = 0 V
1
µ A
I GSSF
Gate–Body Leakage, Forward
V GS = 20 V, V DS = 0 V
100
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –20 V V DS = 0 V
–100
nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 µ
A
1
1.6
2.0
V
V GS(th)
Gate Threshold Voltage
Temperature Coefficient
I D = 250
A, Referenced to 25
C
-4.3
mV/ °
C
T J
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V, I D = 7.9 A
V GS = 10 V, I D = 7.9 A, T J =125
19
30
25
22
35
36
m
C
V GS = 4.5 V, I D = 6.2 A
I D(on)
On–State Drain Current
V GS = 10 V, V DS = 5 V
16
A
g FS
Forward Transconductance
V DS = 10 V,
I D = 7.9 A
22
S
Dynamic Characteristics
C iss
Input Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
830
pF
C oss
Output Capacitance
185
pF
C rss
Reverse Transfer Capacitance
80
pF
Switching Characteristics (Note 2)
t d(on)
Turn–On Delay Time
V DD = 10 V, I D = 1 A,
V GS = 10 V, R GEN = 6 Ω
6
12
ns
t r
Turn–On Rise Time
10
20
ns
t d(off)
Turn–Off Delay Time
18
32
ns
t f
Turn–Off Fall Time
5
10
ns
Q g
Total Gate Charge
V DS = 12 V, I D = 7.9 A,
V GS = 10 V
14
22
nC
Q gs
Gate–Source Charge
2.7
nC
Q gd
Gate–Drain Charge
3.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2 A
(Note 2)
0.7
1.2
V
θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC is guaranteed by design while R
CA is determined by the user's board design.
a) 50°/W when
mounted on a 1in 2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 µ
s, Duty Cycle < 2.0%
FDS9412 Rev D(W)
Notes:
1. R
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Typical Characteristics
30
2.5
4.0V
V GS = 10V
6.0V
25
3.5V
V GS = 3.0V
2
20
5.0V
4.5V
3.5V
15
3.0V
1.5
4.0V
4.5V
10
5.0V
6.0V
1
10V
5
2.5V
0
0.5
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
V DS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.1
I D = 7.9A
V GS = 10V
I D = 7.9 A
1.6
0.08
1.4
1.2
0.06
1
0.04
T A = 125 o C
0.8
0.02
T A = 25 o C
0.6
0.4
0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C)
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
100
T A = -55 o C
V DS = 5V
25 o C
V GS = 0V
10
25
T A = 125 o C
125 o C
20
1
25 o
15
0.1
-55 o C
10
0.01
5
0.001
0
0.0001
0.5
1.5
2.5
3.5
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V GS , GATE TO SOURCE VOLTAGE (V)
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9412 Rev D(W)
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Typical Characteristics
10
1500
I D = 8.4A
V DS = 5V
10V
f = 1MHz
V GS = 0 V
8
15V
1200
C ISS
6
900
4
600
2
300
C OSS
C RSS
0
0
0
3
6
9
12
15
0
5
10
15
20
25
30
Q g , GATE CHARGE (nC)
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
R DS(ON) LIMIT
100 µ
s
SINGLE PULSE
R θ
10
1ms
40
JA = 125 o C/W
T A = 25 o C
10ms
100ms
1
1s
30
10s
DC
0.1
20
V GS = 10V
SINGLE PULSE
R θ JA = 125 o C/W
T A = 25 o C
0.01
10
0.001
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V DS , DRAIN-SOURCE VOLTAGE (V)
t 1 , TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θ
JA (t) = r(t) + R θ
JA
0.2
R θ
JA = 125 °C/W
0.1
0.1
0.05
P(pk)
0.02
t 1
0.01
0.01
t 2
SINGLE PULSE
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9412 Rev D(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E 2 CMOS TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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