SI4800DY.pdf

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Si4800DY
Vishay Siliconix
N-Channel Reducded Q g , Fast Switching MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (
)
I D (A)
0.0185 @ V GS = 10 V
9
30
0.033 @ V GS = 4.5 V
7
D
D
D
D
SO-8
S
1
8
D
S
2
3
4
7
D
G
S
6
D
G
5
D
N-Channel MOSFET
Top View
Ordering Information: Si4800DY
Si4800DY-T1 (with Tape and Reel)
S
S S
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
30
V
Gate-Source Voltage
V GS
25
T A = 25
C
9
Continuous Drain Current (T J = 150
C) a , b
I D
T A = 70
C
7
A
Pulsed Drain Current (10
s Pulse Width)
I DM
40
Continuous Source Current (Diode Conduction) a, b
I S
2.3
Maximum Power Dissipation a, b
T A = 25
C
P D
2.5
W
T A = 70
C
1.6
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
50
Maximum Junction-to-Ambient (MOSFET) a
R thJA
C/W
Steady State
70
Notes
a. Surface Mounted on FR4 Board.
b. t
Document Number: 70856
S-31062—Rev. B, 26-May-03
www.vishay.com
1
30
V
C) a, b
Continuous Drain Current (T J = 150
I D
A
Maximum Power Dissipation a, b
P D
W
Maximum Junction to Ambient (MOSFET) a
R
C/W
10 sec.
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Si4800DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
0.8
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
Zero Gate Voltage Drain Current
I DSS
V DS = 24 V, V GS = 0 V
1
A
V DS = 24 V, V GS = 0 V, T J = 55
C
5
On-State Drain Current a
I D(on)
V DS
5 V, V GS = 10 V
30
A
V GS = 10 V, I D = 9 A
0.0155
0.0185
Drain-Source On-State Resistance a
Drain-Source On-State Resistance a
r DS(on)
0.033
V GS = 4.5 V, I D = 7 A
0.0275
Forward Transconductance a
g fs
V DS = 15 V, I D = 9 A
16
S
Diode Forward Voltage a
V SD
I S = 2.3 A, V GS = 0 V
0.71
1.2
V
Dynamic b
Total Gate Charge
Q g
8.7
13
Gate-Source Charge
Q gs
V DS = 15 V, V GS = 5.0 V, I D = 9 A
2.25
nC
Gate-Drain Charge
Q gd
4.2
Gate Resistance
R g
0.5
1.5
2.6
Turn-On Delay Time
t d(on)
11
16
Rise Time
t r
V DD = 15 V, R L = 15
8
15
Turn-Off Delay Time
t d(off)
I D
1 A, V GEN = 10 V, R G = 6
22
30
ns
Fall Time
t f
9
15
Source-Drain Reverse Recovery Time
t rr
I F = 2.3 A, di/dt = 100 A/
s
50
80
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
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2
Document Number: 70856
S-31062—Rev. B, 26-May-03
Zero Gate Voltage Drain Current
I DSS
A
r DS(on)
V DD = 15 V, R L = 15
Notes
a. Pulse test; pulse width
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Si4800DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
V GS = 10 thru 5 V
32
32
4 V
24
24
16
16
3 V
T C = 125
C
8
8
25
C
-55
C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.15
1200
0.12
1000
800
C iss
0.09
600
0.06
C oss
V GS = 4.5 V
400
0.03
V GS = 10 V
200
C rss
0.00
0
0
8
16
24
32
40
0
5
10
15
20
25
30
I D - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
V DS = 15 V
I D = 9 A
1.6
V GS = 10 V
I D = 9 A
8
1.4
6
1.2
4
1.0
0.8
2
0.6
0
0.4
0
3
6
9
12
15
- 50 - 25
0
25
50
75
100 125 150
Q g - Total Gate Charge (nC)
T J - Junction Temperature (
C)
Document Number: 70856
S-31062—Rev. B, 26-May-03
www.vishay.com
3
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Si4800DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.20
0.16
10
T J = 150
C
0.12
I D = 9 A
T J = 25
C
0.08
0.04
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
30
0.4
I D = 250
A
25
0.2
- 0.0
20
- 0.2
15
- 0.4
10
- 0.6
5
- 0.8
- 1.0
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T J - Temperature (
C)
Time (sec)
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
t 1
0.05
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 125
C/W
3. T JM - T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70856
S-31062—Rev. B, 26-May-03
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