PDTA143EU.pdf
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PDTA143EU
PNP resistor-equipped transistor
Product specification
Supersedes data of 1998 May 18
1999 Apr 13
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143EU
FEATURES
·
Built-in bias resistors R1 and R2
(typ. 4.7 k
W
each)
3
·
Simplification of circuit design
handbook, 4 columns
3
·
Reduces number of components
and board space.
R1
1
R2
APPLICATIONS
2
·
Especially suitable for space
reduction in interface and driver
circuits
1
Top view
2
MAM135
·
Inverter circuit configurations
without use of external resistors.
Fig.1 Simplified outline (SOT323) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT323 plastic package.
NPN complement: PDTC143EU.
MARKING
1
3
TYPE
NUMBER
MARKING
CODE
(1)
PDTA143EU
01
*
PINNING
2
Note
1.
MGA893 - 1
PIN
DESCRIPTION
*
= - : Made in Hong Kong.
*
1
base/input
Fig.2 Equivalent inverter
symbol.
= t : Made in Malaysia.
2
emitter/ground (+)
3
collector/output
1999 Apr 13
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
50
V
V
EBO
emitter-base voltage
open collector
-
-
10
V
V
I
input voltage
positive
-
10
V
negative
-
-
30
V
I
O
output current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
100
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
50 V
-
-
-
100 nA
I
CEO
collector cut-off current
I
B
= 0; V
CE
=
-
30 V
-
-
-
1
m
A
I
B
= 0; V
CE
=
-
30 V; T
j
= 150
°
C
-
-
-
50
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5V
-
-
-
0.9 mA
h
FE
DC current gain
I
C
=
-
10 mA; V
CE
=
-
5V
30
-
-
V
CEsat
collector-emitter saturation voltage I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
-
150 mV
V
i(off)
input-off voltage
I
C
=
-
100
m
A; V
CE
=
-
5V
-
-
1.1
-
0.5 V
V
i(on)
input-on voltage
I
C
=
-
20 mA; V
CE
=
-
0.3 V
-
2.5
-
1.9
-
V
R1
input resistor
3.3
4.7
6.1
k
W
R2
R1
resistor ratio
0.8
1
1.2
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
-
3
pF
1999 Apr 13
3
--------
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143EU
10
3
MBK794
-
MBK793
handbook, halfpage
handbook, halfpage
h
FE
V
CEsat
(V)
(1)
(2)
10
2
(3)
-
10
-
1
(1)
10
(2)
(3)
1
-
10
-
2
-
10
-
1
-
1
-
10
-
10
2
-
1
-
10
I
C
(mA)
-
10
2
I
C
(mA)
V
CE
=
-
5V.
(1) T
amb
= 150
°
C.
(2) T
amb
=25
°
I
C
/I
B
= 20.
(1) T
amb
= 100
°
C.
(2) T
amb
=25
°
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
MBK796
-
10
2
MBK795
-
10
handbook, halfpage
handbook, halfpage
V
i(off)
(V)
V
i(on)
(V)
-
10
(1)
-
1
(2)
(3)
(1) (2) (3)
-
1
-
10
-
1
10
-
2
10
-
1
-
10
-
1
-
-
-
1
-
10
-
10
-
1
-
1
-
10
-
10
2
I
C
(mA)
I
C
(mA)
C.
(2) T
amb
=25
°
C.
(3) T
amb
= 100
-
40
°
C.
(2) T
amb
=25
°
C.
(3) T
amb
= 100
-
40
°
°
C.
°
C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 Apr 13
4
1
C.
(3) T
amb
=
-
40
°
C.
C.
(3) T
amb
=
-
40
°
C.
V
CE
=
-
5V.
(1) T
amb
=
V
CE
=
-
0.3 V.
(1) T
amb
=
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143EU
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
H
E
v
M
A
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
1
max
b
p
c
D E
e
e
1
E
L
p
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 13
5
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