PMBFJ108_PMBFJ109_PMBFJ110.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995
383845122.039.png
Philips Semiconductors
Product specification
N-channel junction FETs
PMBFJ108;
PMBFJ109; PMBFJ110
FEATURES
·
High-speed switching
·
Interchangeability of drain and
source connections
·
Low R DSon at zero gate voltage
(
<
8
W
for PMBFJ108).
handbook, halfpage
3
DESCRIPTION
d
s
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
g
1
2
Top view
MAM385
PINNING - SOT23
PIN
DESCRIPTION
1
drain
Fig.1 Simplified outline and symbol.
2
source
3
gate
Note
1. Drain and source are
interchangeable.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS MIN. MAX. UNIT
V DS
drain-source voltage
-
±
25
V
V GSO
gate-source voltage
-
-
25
V
V GDO
drain-drain voltage
-
- 25
V
I G
forward gate current
(DC)
50
mA
P tot
total power dissipation T amb =25
°
C;
-
250
mW
note 1
T stg
storage temperature
-
65 150
°
C
T j
operating junction
temperature
-
150
°
C
April 1995
2
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Philips Semiconductors
Product specification
N-channel junction FETs
PMBFJ108;
PMBFJ109; PMBFJ110
THERMAL RESISTANCE
SYMBOL
PARAMETER
VALUE
UNIT
R th j-a
from junction to ambient (note 1)
500
K/W
Notes
1. Mounted on an FR-4 printboard.
STATIC CHARACTERISTICS
T j =25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
-
I GSS
reverse gate current
V GS = 15 V
V DS =0
-
3A
I DSX
drain-source cut-off current
10 V
V DS =5 V
-
-
3A
I DSS
drain current
V GS =0
V DS = 15 V
PMBFJ108
80
-
mA
PMBFJ109
40
-
PMBFJ110
10
-
- V (BR)GSS
gate-source breakdown voltage
- I G =1 m A
V DS =0
-
25
V
-
V GS(off)
gate-source cut-off voltage
A
V DS =5 V
m
PMBFJ108
3
10
V
PMBFJ109
2
6
PMBFJ110
0.5
4
R DS(on)
drain-source on-resistance
V GS =0 V
V DS = 0.1 V
PMBFJ108
-
8
W
PMBFJ109
-
12
PMBFJ110
-
18
April 1995
3
-
V GS =
I D =1
383845122.014.png 383845122.015.png
Philips Semiconductors
Product specification
N-channel junction FETs
PMBFJ108;
PMBFJ109; PMBFJ110
DYNAMIC CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C is
input capacitance
V DS =0
- V GS = 10 V
f = 1 MHz
15
30 pF
C is
input capacitance
V DS =0
-
50
85 pF
V GS =0
f = 1 MHz
T amb =25 ° C
C rs
feedback capacitance
V DS =0
-
8
15 pF
V GS = 10 V
f = 1 MHz
Switching times (see Fig.2)
t d
delay time
note 1
2
-
ns
t on
turn-on time
note 1
4
-
ns
t s
storage time
note 1
4
-
ns
t off
turn-off time
note 1
6
-
ns
Notes
1. Test conditions for switching times are as follows:
V DD = 1.5 V, V GS = 0 to - V GS(off) (all types);
- V GS(off) = 12 V, R L = 100 W (PMBFJ108);
-
V GS(off) = 7 V, R L = 100
W
(PMBFJ109);
-
V GS(off) = 5 V, R L = 100
W
(PMBFJ110).
V GS = 0 V
10%
k, halfpage
50 W
0.1 m F
V DD
V i
10 nF
10
m
F
R L
-
V GS off
90%
SAMPLING
SCOPE
50
t off
t on
DUT
t s
t f
t d
t r
W
50
W
90%
V o
MBK295
10%
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4
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Philips Semiconductors
Product specification
N-channel junction FETs
PMBFJ108;
PMBFJ109; PMBFJ110
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
April 1995
5
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