PMMT591A.pdf

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PMMT591A_3
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMMT591A
PNP BISS transistor
Product specification
Supersedes data of 1999 May 21
1999 Aug 04
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Philips Semiconductors
Product specification
PNP BISS transistor
PMMT591A
FEATURES
PINNING
·
High current (max. 1 A)
PIN
DESCRIPTION
·
Low collector-emitter saturation voltage ensures
reduced power consumption.
1
base
2
emitter
APPLICATIONS
3
collector
·
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. NPN complement: PMMT491A.
handbook, halfpage
3
3
1
MARKING
1
2
2
TYPE NUMBER
MARKING CODE (1)
Top view
MAM256
PMMT591A
9B
*
Note
1.
*
= p: Made in Hong Kong.
Fig.1 Simplified outline (SOT23) and symbol.
*
= t: Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
40
V
V CEO
collector-emitter voltage
open base
-
-
40
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
- 1
A
I CM
peak collector current
-
-
2
A
I BM
peak base current
-
-
1
A
P tot
total power dissipation
T amb £
25
°
C; note 1
-
250
mW
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
C
T amb
operating ambient temperature
-
65
+150
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Aug 04
2
°
°
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Philips Semiconductors
Product specification
PNP BISS transistor
PMMT591A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T amb =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
I E = 0; V CB = - 30 V
-
- 100
nA
I CEO
collector cut-off current
I B = 0; V CE =
-
30 V
-
-
100
nA
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
100
nA
h FE
DC current gain
5 V; note 1
I C = - 1 mA
-
300
-
I C =
-
100 mA
300
800
I C =
-
500 mA
250
-
I C =
-
1 A
160
-
V CEsat
collector-emitter saturation voltage note 1
I C =
-
100 mA; I B =
-
1mA
-
-
200
mV
I C =
-
500 mA; I B =
-
20 mA
-
-
350
mV
I C =
-
1 A; I B =
-
100 mA
-
-
500
mV
V BEsat
base-emitter saturation voltage
I C = - 1 A; I B = - 50 mA; note 1
-
- 1.1
V
V BE
base-emitter voltage
V CE =
-
5 V; I C =
-
1 A; note 1
-
-
1
V
C c
collector capacitance
I E =i e = 0; V CB =
-
10 V; f = 1 MHz
-
12
pF
f T
transition frequency
I C =
-
50 mA; V CE =
-
10 V;
150
-
MHz
f = 100 MHz
Note
1. Pulse test: t p £
300
m
s;
d£
0.02.
1999 Aug 04
3
°
V CE =
383845282.030.png 383845282.031.png
Philips Semiconductors
Product specification
PNP BISS transistor
PMMT591A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1999 Aug 04
4
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Philips Semiconductors
Product specification
PNP BISS transistor
PMMT591A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 04
5
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