PDTC143XE.pdf

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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D173

PDTC143XE

NPN resistor-equipped transistor

Product speciﬁcation

Supersedes data of 1998 May 29

1999 May 21

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Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143XE

FEATURES

·

Built-in bias resistors R1 and R2 (typ. 4.7 k W and 10 k W

respectively)

·

Simplification of circuit design

·

Reduces number of components and board space.

handbook, halfpage

3

3

R1

1

APPLICATIONS

R2

2

·

Especially suitable for space reduction in interface and

driver circuits

1

2

Top view

MAM346

·

Inverter circuit configurations without use of external

resistors.

DESCRIPTION

Fig.1 Simplified outline (SC-75; SOT416) and

symbol.

NPN resistor-equipped transistor in a SC-75 (SOT416)

plastic package. PNP complement: PDTA143XE.

MARKING

TYPE NUMBER

MARKING CODE

PDTC143XE

34

1

3

PINNING

2

MGA893 - 1

PIN

DESCRIPTION

1

base/input

2

emitter/ground

Fig.2 Equivalent inverter symbol.

3

collector/output

1999 May 21

2

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Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143XE

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V CBO

collector-base voltage

open emitter

-

50

V

V CEO

collector-emitter voltage

open base

-

50

V

V EBO

emitter-base voltage

open collector

-

10

V

V I

input voltage

positive

-

+20

V

negative

-

-

7

V

I O

output current (DC)

-

100

mA

I CM

peak collector current

-

100

mA

P tot

total power dissipation

T amb £

25

C; note 1

-

150

mW

T stg

storage temperature

-

65

+150

°

C

T j

junction temperature

-

150

° C

T amb

operating ambient temperature

-

65

+150

°

C

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-a

thermal resistance from junction to ambient

note 1

833

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T amb =25

°

C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I CBO

collector cut-off current

I E = 0; V CB =50V

-

-

100

nA

I CEO

collector cut-off current

I B = 0; V CE =30V

-

-

1

m

A

I B = 0; V CE =30V; T j = 150 ° C

-

-

50

m A

I EBO

emitter cut-off current

I C = 0; V EB =5V

-

-

0.6

mA

h FE

DC current gain

I C = 10 mA; V CE =5V

50

-

-

V CEsat

collector-emitter saturation voltage I C = 10 mA; I B = 0.5 mA

-

-

100

mV

V i(off)

input-off voltage

I C = 100 m A; V CE =5V

-

-

300

mV

V i(on)

input-on voltage

I C = 20 mA; V CE = 0.3 V

2.5

-

-

V

R1

input resistor

3.3

4.7

6.1

k

W

R2

R1

resistor ratio

1.7

2.1

2.6

C c

collector capacitance

I E =i e = 0; V CB = 10 V; f = 1 MHz

-

-

2.5

pF

1999 May 21

3

°

--------

383845719.017.png

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143XE

10 3

MDA849

10 3

MDA850

handbook, halfpage

handbook, halfpage

h FE

(1)

(2)

V CEsat

(mV)

10 2

(3)

10 2

(2)

(1)

10

(3)

1

10

10 - 1

10 2

10 2

1

10

1

10

I C (mA)

I C (mA)

V CE =5V.

(1) T amb = 100 ° C.

(2) T amb =25

°

I C /I B = 20.

(1) T amb = 100 ° C.

(2) T amb =25

°

Fig.3 DC current gain as a function of collector

current; typical values.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

10

MDA851

MDA852

10 2

handbook, halfpage

handbook, halfpage

V i(off)

(V)

V i(on)

(V)

10

(1)

1

(2)

(3)

(1)

(2)

1

(3)

10 - 1

10 - 1

10 - 1

10 - 1

10 2

1

10

1

10

I C (mA)

I C (mA)

C.

(2) T amb =25 ° C.

(3) T amb = 100

-

40

°

C.

(2) T amb =25 ° C.

(3) T amb = 100

-

40

°

°

C.

°

C.

Fig.5 Input-off voltage as a function of collector

current; typical values.

Fig.6 Input-on voltage as a function of collector

current; typical values.

1999 May 21

4

C.

(3) T amb = - 40 ° C.

C.

(3) T amb = - 40 ° C.

10 - 2

V CE =5V.

(1) T amb =

V CE = 0.3 V.

(1) T amb =

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Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143XE

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT416

D

B

E

A

X

v M A

H E

3

Q

A

1

2

A 1

c

e 1

b p

w M

B

e

L p

detail X

0

0.5

1 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

A 1

max

b p

c

D

E

e

e 1

H E

L p

Q

v

w

mm

0.95

0.60

0.1

0.30

0.15

0.25

0.10

1.8

1.4

0.9

0.7

1

0.5

1.75

1.45

0.45

0.15

0.23

0.13

0.2

0.2

OUTLINE

VERSION

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

SOT416

SC-75

97-02-28

1999 May 21

5

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