2SA1242.pdf

2SA1242

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1242

Strobe Flash Applications

Medium Power Amplifier Applications

Unit: mm

• Excellent h FE linearity

: h FE (1) = 100 to 320 (V CE = −2 V, I C = −0.5 A)

: h FE (2) = 70 (min) (V CE = −2 V, I C = −4 A)

• Low collector saturation voltage

: V CE (sat) = −1.0 V (max) (I C = −4 A, I B = −0.1 A)

• High power dissipation

: P C = 10 W (Tc = 25°C), P C = 1.0 W (Ta = 25°C)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

V CBO −35

Collector-emitter voltage

V CEO −20

Emitter-base voltage

V EBO −8

JEDEC ―

I C

−5

Collector current

Pulsed

(Note 1)

I CP −8

JEITA

―

Base current

I B −0.5

TOSHIBA

2-7B1A

Collector power

dissipation

Ta = 25°C

1.0

Weight: 0.36 g (typ.)

P C

Tc = 25°C

Junction temperature

T j

150

°C

Storage temperature range

T stg −55 to 150

°C

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

JEDEC ―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2002-07-23

2SA1242

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

I CBO

CB = −35 V, I E = 0

― ― −100

Emitter cut-off current

I EBO

EB = −8 V, I C = 0

― ― −100

Collector-emitter breakdown voltage

V CEO

I C = −10 mA, I B = 0

−20 ― ―

Emitter-base breakdown voltage

V EBO

I E = −1 mA, I C = 0

−8 ― ―

DC current gain

h FE (1)

(Note2)

V CE = −2 V, I C = −0.5 A

100 ―

320

h FE (2)

CE = −2 V, I C = −4 A

70 ― ―

Collector-emitter saturation voltage

V CE (sat) I C = −4 A, I B = −0.1 A

― ― −1.0

Base-emitter voltage

V BE

CE = −2 V, I C = −4 A

― ― −1.5

Transition frequency

f T

V CE = −2 V, I C = −0.5 A

―

170 ―

MHz

Collector output capacitance

C ob

V CB = −10 V, I E = 0, f = 1 MHz ―

62 ―

Note 2: h FE (1) classification O: 100 to 200, Y: 160 to 320

Marking

A1242

Product No.

Lot No.

h FE Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

2002-07-23

2SA1242

I C – V CE

h FE – I C

−8

1000

−120

Common emitter

Tc = 25°C

−150

500

Tc = 100°C

−100

300

−6

−70

−50

100

−25

−4

−30

−20

Common emitter

V CE = −2 V

I B = −10 mA

−2

−0.01

−0.03 −0.1 −0.3 −1

−3

−10

Collector current I C (A)

−2 −4 −6 −8 −10

Collector-emitter voltage V CE (V)

V CE (sat) – I C

V BE – I C

−3

−8

Common emitter

I C /I B = 40

Common emitter

V CE = −2 V

−1

−6

−0.5

−0.3

Tc = 100° C

−4

−25

Tc = 100°C

−0.1

−0.05

−25

−0.03

−2

−0.01

−0.03 −0.1 −0.3 −1

−3 −10

Collector current I C (A)

0 −0.4 −0.8 −1.2 −1.6 −2.0

Base-emitter voltage V BE (V)

Safe Operating Area

P C – Ta

−10

I C max (pulsed)**

(1) Tc = Ta infinite heat sink

(2) Ceramic substrate

50 × 50 × 0.8 mm

(3) No heat sink

I C max (continuous)

1 ms*

(1)

−5

10 ms*

−3

DC operation

Tc = 25°C

100 ms*

−1

−0.5

* : Single nonrepetitive pulse

Tc = 25°C

** : Pulse width = 10 ms (max)

Duty cycle = 30 ％ (max)

Curves must be derated linearly

with increase in temperature.

(2)

−0.3

(3)

V CEO max

−10 −30

−0.1

−0.3

−1 −3

100

125

150

175

Collector-emitter voltage V CE (V)

Ambient temperature Ta (°C)

2002-07-23

2SA1242

RESTRICTIONS ON PRODUCT USE

000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

2002-07-23

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