PBYR1045F series.pdf

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Philips Semiconductors
Product specification
Schottky barrier
PBYR1045F, PBYR1045X series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
k
a
I F(AV) = 10 A
1
2
• Isolated mounting tab
V F
£
0.59 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1045F series is supplied in the SOD100 package.
The PBYR1045X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
case
1
cathode
case
2
anode
tab
isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
40F
45F
PBYR10
40X
45X
V RRM
Peak repetitive reverse
-
40
45
V
voltage
V RWM
Working peak reverse
-
40
45
V
voltage
V R
Continuous reverse voltage T hs
£
95 ˚C
-
40
45
V
I F(AV)
Average rectified forward
square wave;
d
= 0.5; T hs
£
112 ˚C
-
10
A
current
I FRM
Repetitive peak forward
square wave;
d
= 0.5; T hs
£
112 ˚C
-
20
A
current
I FSM
Non-repetitive peak forward t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; T j = 125 ˚C prior to
surge; with reapplied V RRM(max)
I RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T j max
T j
Operating junction
-
150
˚C
temperature
T stg
Storage temperature
- 65
175
˚C
July 1998
1
Rev 1.200
Rectifier diodes
385247567.011.png 385247567.012.png
Philips Semiconductors
Product specification
Schottky barrier
PBYR1045F, PBYR1045X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
Peak isolation voltage from SOD100 package; R.H.
£
65%; clean and
-
-
1500
V
both terminals to external
dustfree
heatsink
V isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
-
-
2500
V
both terminals to external
sinusoidal waveform; R.H.
£
65%; clean
heatsink
and dustfree
C isol
Capacitance from pin 1 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction with heatsink compound
-
-
5.5 K/W
to heatsink
R th j-a
Thermal resistance junction in free air
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage
I F = 10 A; T j = 125˚C
-
0.5 0.59
V
I F = 20 A; T j = 125˚C
-
0.69 0.75
V
I F = 20 A
-
0.65 0.87
V
I R
Reverse current
V R = V RWM
-
0.2
1.3
mA
V R = V RWM ; T j = 100˚C
-
22
35
mA
C d
Junction capacitance
V R = 5 V; f = 1 MHz, T j = 25˚C to 125˚C
-
350
-
pF
July 1998
2
Rev 1.200
Rectifier diodes
385247567.013.png
Philips Semiconductors
Product specification
Schottky barrier
PBYR1045F, PBYR1045X series
10
Forward dissipation, PF (W)
PBYR1045X
Ths(max) (C)
95
100
Reverse current, IR (mA)
PBYR1045
Vo = 0.41 V
D = 1.0
Rs = 0.016 Ohms
125 C
8
106
0.5
10
100 C
0.2
6
117
0.1
1
75 C
4
128
50 C
t p
T
I
t p
D =
0.1
2
139
T
t
Tj = 25 C
0
150
0.01
0
5
10
15
0
25
50
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.1. Maximum forward dissipation P F = f(I F(AV) );
square current waveform where I F(AV) =I F(RMS) x
Ö
D.
Fig.4. Typical reverse leakage current; I R = f(V R );
parameter T j
8
Forward dissipation, PF (W)
PBYR1045X
Ths(max) (C)
106
Cd / pF
PBYR1045
1000
Vo = 0.41 V
a = 1.57
Rs = 0.016 Ohms
7
1.9
2.2
6
117
2.8
5
4
4
128
100
3
2
139
1
0
150
10
0
2
4
6
8
10
1
10
100
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation P F = f(I F(AV) );
sinusoidal current waveform where a = form
factor = I F(RMS) / I F(AV) .
Fig.5. Typical junction capacitance; C d = f(V R );
f = 1 MHz; T j = 25˚C to 125 ˚C.
50
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
PBYR1045X
10
Transient thermal impedance, Zth j-hs (K/W)
40
1
30
typ
20
max
0.1
P
t p
D =
t p
10
D
T
T
t
0
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1us
10us 100us 1ms 10ms 100ms
1s
10s
Forward voltage, VF (V)
pulse width, tp (s)
PBYR1045X
Fig.3. Typical and maximum forward characteristic
I F = f(V F ); parameter T j
Fig.6. Transient thermal impedance; Z th j-hs = f(t p ).
July 1998
3
Rev 1.200
Rectifier diodes
385247567.014.png 385247567.001.png
Philips Semiconductors
Product specification
Schottky barrier
PBYR1045F, PBYR1045X series
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
seating
plane
17
max
3.5 max
not tinned
4.4
13.5
min
ka
0.4
M
0.9
0.7
0.55 max
5.08
1.3
top view
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Rectifier diodes
385247567.002.png 385247567.003.png 385247567.004.png 385247567.005.png 385247567.006.png 385247567.007.png
Philips Semiconductors
Product specification
Schottky barrier
PBYR1045F, PBYR1045X series
MECHANICAL DATA
Dimensions in mm
10.3
max
4.6
max
Net Mass: 2 g
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
2
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
Rectifier diodes
385247567.008.png 385247567.009.png 385247567.010.png

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