2SC3892A.pdf

(95 KB) Pobierz
DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3892A
DESCRIPTION ·
· With TO-3P(H)IS package
· Built-in damper diode
· High voltage ,high speed
APPLICATIONS
· Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 ℃ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V CBO
Collector-base voltage
Open emitter
1500
V
V CEO
Collector-emitter voltage
Open base
600
V
V EBO
Emitter-base voltage
Open collector
5
V
I C
Collector current
7
A
I CM
Collector current-peak
14
A
I B
Base current
3.5
A
P C
Collector power dissipation
T C =25 ℃
50
W
T j
Junction temperature
150 ℃
T stg
Storage temperature
-55~150 ℃
236737973.004.png 236737973.005.png 236737973.006.png 236737973.007.png 236737973.001.png
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3892A
CHARACTERISTICS
Tj=25 ℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V (BR)EBO Emitter-base breakdown voltage
I E =200mA , I C =0
5
V
V CEsat
Collector-emitter saturation voltage I C =5A ;I B =1.2A
5.0
V
V BEsat
Base-emitter saturation voltage
I C =5A ;I B =1.2A
1.5
V
I CBO
Collector cut-off current
V CB =500V; I E =0
10 μ A
I EBO
Emitter cut-off current
V EB =5V; I C =0
66
200
mA
h FE
DC current gain
I C =1A ; V CE =5V
8
12
f T
Transition frequency
I C =0.1A ; V CE =10V
1
3
MHz
C OB
Collector output capacitance
I E =0 ; V CB =10V;f=1MHz
210
pF
V F
Diode forward voltage
I F =5A
2.0
V
t s
Storage time
2.5 μ s
Resistive load
I CP =5A ;I B1 =1A;I B2 =-2A;R L =40 Ω
t f
Fall time
0.2 μ s
2
236737973.002.png
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3892A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ± 0.15 mm)
3
236737973.003.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin