MTP3N60.pdf
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MTP3N60
MTP3N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
V
DSS
R
DS(on)
I
D
MTP3N60
MTP3N60FI
600 V
600 V
< 2.5
W
3.9 A
2.5 A
< 2.5
W
n
TYPICAL R
DS(on)
= 2
W
AVALANCHE RUGGED TECHNOLOGY
n
n
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
n
3
APPLICATION ORIENTED
CHARACTERIZATION
3
n
2
2
1
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220 ISOWATT220
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
MTP3N60
MTP3N60FI
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
W
)
600
V
V
GS
Gate-source Voltage
±
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
3.9
2.5
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
2.4
1.5
A
I
DM
(
·
) Drain Current (pulsed)
14
14
A
P
tot
Total Dissipation at T
c
= 25
o
C
100
35
W
Derating Factor
0.8
0.28
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
¾
2000
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
·
) Pulse width limited by safe operating area
November 1996
1/10
(
MTP3N60/FI
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case Max
1.25
3.57
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
3.9
A
d
< 1%)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
300
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
7.7
mJ
d
< 1%)
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
2.4
A
d
< 1%)
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
m
A V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 T
c
= 125
o
C
25
250
A
m
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 1 mA
2
3
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 1.5 A
2
2.5
W
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
3.9
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
*
)
rrd
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.5 A
1.5
2.6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
560
90
40
800
130
55
pF
pF
pF
2/10
m
MTP3N60/FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
GS
= 10 V
(see test circuit, figure 3)
W
45
33
60
42
ns
ns
(di/dt)
on
Turn-on Current Slope V
DD
= 480 V I
D
= 4 A
R
G
= 15
200
A/
m
s
V
GS
= 10 V
(see test circuit, figure 5)
W
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V I
D
= 4 A V
GS
= 10 V
43
6
21
55
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
GS
= 10 V
(see test circuit, figure 5)
W
35
40
60
45
55
75
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current
(pulsed)
3.9
14
A
A
V
SD
(
*
) Forward On Voltage
I
SD
= 3.9 A V
GS
= 0
2
V
t
rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 4 A di/dt = 100 A/
m
s
420
ns
V
DD
= 100 V T
j
= 150
o
C
(see test circuit, figure 5)
Q
rr
3.7
m
C
I
RRM
18
A
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
·
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
V
DD
= 225 V I
D
= 2.5 A
R
G
= 15
V
DD
= 480 V I
D
= 4 A
R
G
= 15
(
(
MTP3N60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
MTP3N60/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
Plik z chomika:
kkxp1973
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