2SJ449.pdf

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2SJ449 DS
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
R DS(on) = 0.8 W MAX. (@ V GS = –10 V, I D = –3.0 A)
• Low C iss C iss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
10.0 ±0.3
3.2 ±0.2
4. 5 ±0 .2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C)
Drain to Source Voltage
V DSS
–250
V
Gate to Source Voltage
V GSS
m30
V
Drain Current (DC)
I D(DC)
m6.0
A
Drain Current (pulse) *
I D(pulse)
m24
A
0.7 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
Total Power Dissipation (T c = 25 ˚C) P T1
35
W
0.65 ±0.1
2.54
Total Power Dissipation (T A = 25 ˚C) P T2
2.0
W
Channel Temperature
T ch
150
˚C
1. Gate
2. Drain
3. Source
Storage Temperature
T stg
–55 to +150 ˚C
Single Avalanche Current **
I AS
–6.0
A
123
Single Avalanche Energy **
E AS
180
mJ
* PW £ 10 m s, Duty Cycle £ 1 %
** Starting T ch = 25 ˚C, R G = 25 W , V GS = –20 V ® 0
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
©
1995
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2SJ449
ELECTRICAL CHARACTERISTICS (T A = 25 ˚C)
CHARACTERISTIC
SYMBOL MIN.
TYP.
MAX.
UNIT
W
TEST CONDITIONS
Drain to Source On-Resistance
R DS(on)
0.55
0.8
V GS = –10 V, I D = –3.0 A
Gate to Source Cutoff Voltage
V GS(off)
–4.0
–4.8
–5.5
V
V DS = –10 V, I D = –1 mA
Forward Transfer Admittance
| y fs |
2.0
3.5
S
m A
V DS = –10 V, I D = –3.0 A
Drain Leakage Current
I DSS
–100
V DS = –250 V, V GS = 0
Gate to Source Leakage Current
I GSS
m100
nA
V GS = m30 V, V DS = 0
Input Capacitance
C iss
1040
pF
V DS = –10 V
Output Capacitance
C oss
360
pF
V GS = 0
Reverse Transfer Capacitance
C rss
70
pF
f = 1 MHz
Turn-On Delay Time
t d(on)
24
ns
I D = –3.0 A
Rise Time
t r
16
ns
V GS(on) = –10 V
Turn-Off Delay Time
t d(off)
47
ns
V DD = –125 V
Fall Time
t f
14
ns
R G = 10 W , R L = 42 W
Total Gate Charge
Q G
23.1
nC
I D = –6.0 A
Gate to Source Charge
Q GS
7.1
nC
V DD = –200 V
Gate to Drain Charge
Q GD
12.9
nC
V GS = –10 V
Body Diode Forward Voltage
V F(S-D)
0.92
V
I F = –6.0 A, V GS = 0
Reverse Recovery Time
t rr
155
ns
I F = –6.0 A, V GS = 0
Reverse Recovery Charge
Q rr
930
nC
di/dt = 50 A/ m s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
D.U.T.
R L
V GS
Wave
Form
V GS
90 %
L
R G = 25 W
V GS (on)
10 %
0
R G
PG
PG.
V DD
50 W
V DD
R G = 10
W
I D
90 %
V GS = –20
®
0 V
90 %
I D
V GS
I D
Wave
Form
BV DSS
10 %
10 %
0
I AS
0
V DS
t d (on)
t r
t d (off)
t f
I D
t
V DD
t = 1 s
Duty Cycle £ 1 %
m
t on
t off
Starting T ch
Test Circuit 3 Gate Charge
D.U.T.
I G = –2 m A
R L
PG.
50 W
V DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
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2SJ449
TYPICAL CHARACTERISTICS (T A = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
100
30
80
25
20
60
15
40
10
20
5
0
20 40 60 80 100 120 140 160
0
20
40 60 80 100 120 140 160
T C - Case Temperature - ˚C
T C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–100
P u lsed
I D(pulse)
–20
–10
–16
V GS = –20 V
–10 V
I D(DC)
–12
–1.0
–8
–4
–0.1
–1.0
T C = 25 ˚C
Single Pulse
–10
–100
–1000
0
–5
–10
–15
–20
V DS - Drain to Source Voltage - V
V DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
–100
Pulsed
–10
–1.0
T A = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
–0.1
V DS = –10 V
0
–5
–10
–15
V GS - Gate to Source Voltage - V
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2SJ449
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
R th(ch-a) = 62.5 ˚C/W
10
R th(ch-c) = 3.57 ˚C/W
1
0.1
0.01
Single Pulse
0.001
10
m
100
m
1 m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
V DS = –10 V
Pulsed
1.5
Pulsed
10
T A = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
I D = –6 A
–3 A
–1.2 A
1.0
0.5
0.1
–0.1
–1.0
–10
–100
0
–5
–10
–15
I D - Drain Current - A
V GS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
Pulsed
V DS = –10 V
I D = –1 mA
–8.0
1.0
–6.0
V GS = –10 V
–20 V
–4.0
0.5
–2.0
0
0
–1.0
–10
–100
–50
0
50
100
150
I D - Drain Current - A
T ch - Channel Temperature - ˚C
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2SJ449
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
2.0
100
1.5
10
V GS = 0 V
10 V
1.0
V GS = –10 V
1
0.5
0.1
0
I D = –3 A
–50
0
50
100
150
0
0.5
1.0
1.5
T ch - Channel Temperature - ˚C
V SD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10 000
V GS = 0
f = 1 MHz
1 000
tr
1 000
C iss
100
t f
t d(on)
C oss
t d(off)
100
10
C rss
V DD = –125 V
V GS = –10 V
R G = 10 W
10
–1.0
1.0
–0.1
–10
–100
–1 000
–1.0
–10
–100
V DS - Drain to Source Voltage - V
I D - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
di/dt = 50 A/ s
V GS = 0
m
-400
–20
I D = –6 A
-300
V DD = –200 V
–125 V
–50 V
–15
100
-200
–10
10
-100
–5
1.0
0.1
1.0
10
100
0
0
10
20
30
40
I D - Drain Current - A
Q g - Gate Charge - nC
5
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