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2SJ449 DS
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
•
Low On-Resistance
R
DS(on)
= 0.8
W
MAX. (@ V
GS
= –10 V, I
D
= –3.0 A)
•
Low C
iss
C
iss
= 1040 pF TYP.
•
High Avalanche Capability Ratings
•
Isolated TO-220 Package
10.0 ±0.3
3.2 ±0.2
4.
5 ±0
.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
V
DSS
–250
V
Gate to Source Voltage
V
GSS
m30
V
Drain Current (DC)
I
D(DC)
m6.0
A
Drain Current (pulse)
*
I
D(pulse)
m24
A
0.7 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
Total Power Dissipation (T
c
= 25 ˚C) P
T1
35
W
0.65 ±0.1
2.54
Total Power Dissipation (T
A
= 25 ˚C) P
T2
2.0
W
Channel Temperature
T
ch
150
˚C
1. Gate
2. Drain
3. Source
Storage Temperature
T
stg
–55 to +150 ˚C
Single Avalanche Current
**
I
AS
–6.0
A
123
Single Avalanche Energy
**
E
AS
180
mJ
*
PW
£
10
m
s, Duty Cycle
£
1 %
**
Starting T
ch
= 25 ˚C, R
G
= 25
W
, V
GS
= –20 V
®
0
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
©
1995
2SJ449
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
SYMBOL MIN.
TYP.
MAX.
UNIT
W
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)
0.55
0.8
V
GS
= –10 V, I
D
= –3.0 A
Gate to Source Cutoff Voltage
V
GS(off)
–4.0
–4.8
–5.5
V
V
DS
= –10 V, I
D
= –1 mA
Forward Transfer Admittance
| y
fs
|
2.0
3.5
S
m
A
V
DS
= –10 V, I
D
= –3.0 A
Drain Leakage Current
I
DSS
–100
V
DS
= –250 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
m100
nA
V
GS
= m30 V, V
DS
= 0
Input Capacitance
C
iss
1040
pF
V
DS
= –10 V
Output Capacitance
C
oss
360
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
70
pF
f = 1 MHz
Turn-On Delay Time
t
d(on)
24
ns
I
D
= –3.0 A
Rise Time
t
r
16
ns
V
GS(on)
= –10 V
Turn-Off Delay Time
t
d(off)
47
ns
V
DD
= –125 V
Fall Time
t
f
14
ns
R
G
= 10
W
, R
L
= 42
W
Total Gate Charge
Q
G
23.1
nC
I
D
= –6.0 A
Gate to Source Charge
Q
GS
7.1
nC
V
DD
= –200 V
Gate to Drain Charge
Q
GD
12.9
nC
V
GS
= –10 V
Body Diode Forward Voltage
V
F(S-D)
0.92
V
I
F
= –6.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
155
ns
I
F
= –6.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
930
nC
di/dt = 50 A/
m
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
D.U.T.
R
L
V
GS
Wave
Form
V
GS
90 %
L
R
G
= 25
W
V
GS (on)
10 %
0
R
G
PG
PG.
V
DD
50
W
V
DD
R
G
= 10
W
I
D
90 %
V
GS
= –20
®
0 V
90 %
I
D
V
GS
I
D
Wave
Form
BV
DSS
10 %
10 %
0
I
AS
0
V
DS
t
d (on)
t
r
t
d (off)
t
f
I
D
t
V
DD
t = 1 s
Duty Cycle
£
1 %
m
t
on
t
off
Starting T
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
= –2 m
A
R
L
PG.
50
W
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SJ449
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
100
30
80
25
20
60
15
40
10
20
5
0
20 40 60 80 100 120 140 160
0
20
40 60 80 100 120 140 160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–100
P
u
lsed
I
D(pulse)
–20
–10
–16
V
GS
= –20 V
–10 V
I
D(DC)
–12
–1.0
–8
–4
–0.1
–1.0
T
C
= 25 ˚C
Single Pulse
–10
–100
–1000
0
–5
–10
–15
–20
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
–100
Pulsed
–10
–1.0
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
–0.1
V
DS
= –10 V
0
–5
–10
–15
V
GS
- Gate to Source Voltage - V
3
2SJ449
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
R
th(ch-a)
= 62.5 ˚C/W
10
R
th(ch-c)
= 3.57 ˚C/W
1
0.1
0.01
Single Pulse
0.001
10
m
100
m
1 m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
V
DS
= –10 V
Pulsed
1.5
Pulsed
10
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
I
D
= –6 A
–3 A
–1.2 A
1.0
0.5
0.1
–0.1
–1.0
–10
–100
0
–5
–10
–15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
Pulsed
V
DS
= –10 V
I
D
= –1 mA
–8.0
1.0
–6.0
V
GS
= –10 V
–20 V
–4.0
0.5
–2.0
0
0
–1.0
–10
–100
–50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
2SJ449
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
2.0
100
1.5
10
V
GS
= 0 V
10 V
1.0
V
GS
= –10 V
1
0.5
0.1
0
I
D
= –3 A
–50
0
50
100
150
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10 000
V
GS
= 0
f = 1 MHz
1 000
tr
1 000
C
iss
100
t
f
t
d(on)
C
oss
t
d(off)
100
10
C
rss
V
DD
= –125 V
V
GS
= –10 V
R
G
= 10
W
10
–1.0
1.0
–0.1
–10
–100
–1 000
–1.0
–10
–100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
di/dt = 50 A/ s
V
GS
= 0
m
-400
–20
I
D
= –6 A
-300
V
DD
= –200 V
–125 V
–50 V
–15
100
-200
–10
10
-100
–5
1.0
0.1
1.0
10
100
0
0
10
20
30
40
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
5
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