2SK3341-01.pdf

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2SK3341-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Equivalent circuit schematic
Drain-source voltage
V DS
900
V
A
A
V
A
mJ
W
°C
Continuous drain current
I D
±10
Pulsed drain current
I D(puls]
±40
Drain(D)
Gate-source voltage
V GS
±30
Repetitive or non-repetitive
I AR *2
10
Maximum Avalanche Energy
E AV *1
648
Max. power dissipation
P D
310
Gate(G)
Operating and storage
T ch
+150
temperature range
T stg
-55 to +150
Source(S)
<
*1 L=11.9mH, Vcc=90V *2 Tch=150°C
Electrical characteristics (T c =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Symbol
V (BR)DSS
V GS(th)
Test Conditions
I D =1mA V GS =0V
I D =1mA V DS =V GS
T ch =25°C
V GS =0V T ch =125°C
V DS =0V
Min. Typ. Max. Units
V
V
µA
mA
nA
S
pF
3.0
3.5
Zero gate voltage drain current I DSS
V DS =900V
10
500
0.2
1.0
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t on
I GSS
R DS(on)
g fs
C iss
C oss
C rss
td (on)
t r
td (off)
t f
Q G
Q GS
Q GD
I AV
V SD
t rr
Q rr
V GS =±30V
I D =5A V GS =10V
I D =5A V DS =25V
10
100
0.92
1.2
3.5
7
2200
V DS =25V
V GS =0V
f=1MHz
3300
240
360
115
173
V CC =600V I D =10A
V GS =10V
R GS =10 W
28
42
ns
70
105
Turn-off time t off
220
330
90
135
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Vcc=450V
I D =10A
V GS =10V
L=11.9mH T ch =25°C
I F =2xI DR V GS =0V T ch =25°C
I F =I DR V GS =0V
-dI F /dt=100A/µs T ch =25°C
120
180
nC
36
54
40
60
10
A
V
µs
µC
1.00
1.50
1.8
21.0
Thermalcharacteristics
Item
Symbol Test Conditions
Min. Typ. Max. Units
Thermal resistance
R th(ch-c) channel to case
R th(ch-a) channel to ambient
0.403
50.0
°C/W
°C/W
1
900
2.5
430907792.002.png
2SK3341-01
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
400
10 2
350
t=
1 m s
300
10 m s
10 1
250
D.C.
100 m s
200
1ms
150
10 0
100
10ms
t
D=
t
T
100ms
50
T
0
10 -1
0
25
50
75
100
125
150
10 1
10 2
10 3
Tc [ ° C]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
22
20
18
10
20V
10V
7V
16
6.5V
14
6.0V
12
1
10
5.5V
8
6
5.0V
0.1
4
VGS=4.5V
2
0
0.01
0
2
4
6
8 10 12 14 16 18 20 22 24 26
0
1
2
3
4
5
6
7
8
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
3.0
VGS=
4.5V
5.0V
5.5V
6.0V
2.5
10
2.0
6.5V
1.5
7V
10V
20V
1
1.0
0.5
0.1
0.0
0.1
1
10
0
5
10
15
20
25
ID [A]
ID [A]
2
430907792.003.png
2SK3341-01
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
4.0
5.0
3.5
4.5
4.0
3.0
3.5
max.
2.5
3.0
2.0
2.5
typ.
1.5
2.0
min.
max.
typ.
1.5
1.0
1.0
0.5
0.5
0.0
-50
-25
0
25
50
75
100
125
150
0.0
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [
C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
25
10 -7
20
10 -8
15
Vcc= 180V
Ciss
450V
720V
10 -9
10
Coss
10 -10
Crss
5
0
0
50
100
150
200
250
10 -11
10 -2
10 -1
10 0
10 1
10 2
Qg [C]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 W
100
10 3
td(off)
10
10 2
tf
1
tr
td(on)
0.1
10 1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10 -1
10 0
10 1
VSD [V]
ID [A]
3
°
430907792.004.png 430907792.005.png
2SK3341-01
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
800
10 0
700
0.5
600
10 -1
0.2
0.1
500
0.05
0.02
400
10 -2
0.01
t
0
t
T
300
D=
T
200
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
100
t [s]
0
0
25
50
75
100
125
150
starting Tch [
C]
4
°
430907792.001.png

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